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Showing items 81-86 of 86 (2 Page(s) Totally)
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| 國立高雄應用科技大學 |
1998-12 |
8~14 μm Normal Incident Optical Transition in GaSb/InAs Superlattices
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YU, C.F.;Chen, S.M.;Su, Y.K. |
| 國立臺灣大學 |
1998 |
Study and application of reactive ion etching on GaInP/InGaAs/GaInP quantum-well HEMTs
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Kuo, C. W.; Su, Y. K.; Lin, H. H.; Tsia, C. Y. |
| 國立成功大學 |
1997-12 |
AlGaInP multiquantum well light-emitting diodes
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Chang, Shoou-Jinn; Chang, C. S.; Su, Y. K.; Chang, P. T.; Wu, Y. R.; Huang, K. H.; Chen, T. P. |
| 國立成功大學 |
1996 |
Doping Effects on Normal Incidence Interband and Intersubband Optical Tranistioin on GaSb/InAs Superlattices
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Chen, S. M.; Su, Y. K.; Lu, Yan-Ten |
| 國立成功大學 |
1996 |
8-14 m m Normal Incident Optical Transition in GaSb/InAs Superlattices
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Chen, S. M.; Su, Y. K.; Lu, Yan-Ten |
| 國立成功大學 |
1993 |
Effects of elastic strain on the band offset and effetcive mass of strained InGaSb epilayers
|
Chen, S. M.; Su, Y. K.; Lu, Yan-Ten |
Showing items 81-86 of 86 (2 Page(s) Totally)
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