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Showing items 356-380 of 542 (22 Page(s) Totally)
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| 國立成功大學 |
2004-10 |
Photoluminescence and Raman scattering in Mg and P co-implanted GaN epitaxial layers
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Liu, K. T.; Su, Yan-Kuin; Chang, Shoou-Jinn; Onomitsu, K.; Horikoshi, Y. |
| 國立成功大學 |
2004-09-15 |
Improved light output power of InGaN/GaN MQW LEDs by lower temperature p-GaN rough surface
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Liu, C. H.; Chuang, R. W.; Chang, Shoou-Jinn; Su, Yan-Kuin; Wu, L. W.; Lin, C. C. |
| 國立成功大學 |
2004-09-15 |
GaN MSM photodetectors with TiW transparent electrodes
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Wang, Chun-Kai; Chang, Shoou-Jinn; Su, Yan-Kuin; Chang, Chia-Sheng; Chiou, Yu-Zung; Kuo, Cheng-Huang; Lin, Tien-Kun; Ko, Tsun-Kai; Tang, Jing-Jou |
| 國立成功大學 |
2004-09 |
Reduction of dark current in AlGaN-GaN Schottky-barrier photodetectors with a low-temperature-grown GaN cap layer
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Lee, M. L.; Sheu, Jinn-Kong; Su, Yan-Kuin; Chang, Shoou-Jinn; Lai, W. C.; Chi, Gou-Chung |
| 國立成功大學 |
2004-09 |
The effect of geometry on the noise characterization of SiGeHBTs and optimized device sizes for the design of low-noise amplifiers
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Lin, Chien-Hsun; Su, Yan-Kuin; Juang, Ying-Zong; Chuang, Ricky W.; Chang, Shoou-Jinn; Chen, Jone F.; Tu, Chih-Ho |
| 國立成功大學 |
2004-08-25 |
InGaN/GaN MQW blue LEDs with GaN/SiN double buffer layers
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Liu, C. H.; Chuang, R. W.; Chang, Shoou-Jinn; Su, Yan-Kuin; Kuo, C. H.; Tsai, J. M.; Lin, C. C. |
| 國立成功大學 |
2004-08-11 |
The structural and optical characterization of a new class of dilute nitride compound semiconductors: GaInNP
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Hsu, H. P.; Huang, Y. S.; Wu, C. H.; Su, Yan-Kuin; Juang, F. S.; Hong, Y. G.; Tu, C. W. |
| 國立成功大學 |
2004-08 |
Simulation and fabrication of InGaP/Al0.98Ga0.02As/GaAs oxide-confined collector-up heterojunction bipolar transistors
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Chen, Wen-Bin; Su, Yan-Kuin; Lin, Chun-Liang; Wang, Hsin-Chuan; Yu, Hsin-Chieh; Chen, Shi-Ming; Su, Juh-Yuh |
| 國立成功大學 |
2004-07-25 |
1.3 mu m InAs quantum dot resonant cavity light emitting diodes
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Su, Yan-Kuin; Yu, H. C.; Chang, Shoou-Jinn; Lee, C. T.; Wang, J. S.; Kovsh, A. R.; Wu, Y. T.; Lin, K. F.; Huang, C. Y. |
| 國立成功大學 |
2004-07-19 |
Studies of InGaN/GaN multiquantum-well green-light-emitting diodes grown by metalorganic chemical vapor deposition
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Ramaiah, K. S.; Su, Yan-Kuin; Chang, Shoou-Jinn; Chen, C. H.; Juang, F. S.; Liu, H. P.; Chen, I. G. |
| 國立成功大學 |
2004-07 |
Device characteristics of GaAs-based heterojunction bipolar transistors using an InGaAs/GaAsP strain-compensated layer as a base material
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Wu, Cheng-Hsien; Su, Yan-Kuin; Chang, Shoou-Jinn; Huang, Ying-Sheng; Hsu, Ying-Sheng |
| 國立成功大學 |
2004-06-15 |
Thermal annealing effect on the photoluminescence properties of unstrained GaInAsSb/InP single quantum well grown by MOVPE
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Su, Yan-Kuin; Wu, Cheng-Hsien; Chang, Jia-Rong |
| 國立成功大學 |
2004-06 |
Improved light-output power of GaN LEDs by selective region activation
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Liu, Chien-Chih; Chen, Yuag-Hsin; Houng, Mau-Phon; Wang, Yeong-Her; Su, Yan-Kuin; Chen, Wen-Bin; Chen, Shi-Ming |
| 國立成功大學 |
2004-05 |
InGaN/AlGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer
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Chen, C. H.; Chang, Shoou-Jinn; Su, Yan-Kuin |
| 國立成功大學 |
2004-05 |
Growth of InGaN self-assembled quantum dots and their application to photodiodes
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Ji, L. W.; Su, Yan-Kuin; Chang, Shoou-Jinn; Tsai, S. I.; Hung, S. C.; Chuang, R. W.; Fang, T. H.; Tsai, T. Y. |
| 國立成功大學 |
2004-04-26 |
Characterization of InGaN/GaN multi-quantum-well blue-light-emitting diodes grown by metal organic chemical vapor deposition
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Ramaiah, K. S.; Su, Yan-Kuin; Chang, Shoou-Jinn; Kerr, B.; Liu, H. P.; Chen, I. G. |
| 國立成功大學 |
2004-04 |
Nitride-based LEDs with an SPS Tunneling contact layer and an ITO transparent contact
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Chang, Shoou-Jinn; Chang, C. S.; Su, Yan-Kuin; Chuang, Ricky Wenkuei; Lai, W. C.; Kuo, C. H.; Hsu, Y. P.; Lin, Y. C.; Shei, Shih-Chang; Lo, H. M.; Ke, J. C.; Sheu, Jinn-Kong |
| 國立成功大學 |
2004-04 |
Improvement of high-speed oxide-confined vertical-cavity surface-emitting lasers
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Yu, Hsin-Chieh; Chang, Shoou-Jinn; Su, Yan-Kuin; Sung, Chia-Pin; Yang, Hung-Pin D.; Huang, Chun-Yuan; Lin, Yu-Wei; Wang, Jin-Mei; La, Fang-I; Kuo, Hao-Chung |
| 國立成功大學 |
2004-04 |
Reduction in turn-on voltage in GaInNAs and InGaAs-based double-heterojunction bipolar transistors
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Wu, Cheng-Hsien; Su, Yan-Kuin; Wei, Shang-Chin; Chang, Shoou-Jinn; Sio, Chi-Cheong; Chen, Wei-Chang |
| 國立成功大學 |
2004-04 |
Improvement of AlGaInP multiple-quantum-well light-emitting diodes by modification of ohmic contact layer
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Wang, Hsin-Chuan; Su, Yan-Kuin; Lin, Chun-Liang; Chen, Wen-Ben; Chen, Shi-Ming; Li, Wen-Liang |
| 國立成功大學 |
2004-04 |
InGaN/GaN light emitting diodes with a lateral current blocking structure
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Wang, Hsin-Chuan; Su, Yan-Kuin; Lin, Chun-Liang; Chen, Wen-Bin; Chen, Shi-Ming |
| 國立成功大學 |
2004-04 |
InGaN/GaN multi-quantum well metal-insulator semiconductor photodetectors with photo-CVD SiO2 layers
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Chang, Ping-Chuan; Chen, Chin-Hsiang; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, Po-Chang; Jhou, Yi-De; Liu, Chun-Hsing; Hung, Hung; Wang, Shih-Ming |
| 國立成功大學 |
2004-03-15 |
The effect of solvent on the etching of ITO electrode
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Huang, C. J.; Su, Yan-Kuin; Wu, S. L. |
| 國立成功大學 |
2004-03-15 |
Piezoreflectance and contactless electroreflectance spectra of an optoelectronic material: GaInNP grown on GaAs substrates
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Su, Yan-Kuin; Wu, C. H.; Huang, Y. S.; Hsu, H. P.; Chen, W. C.; Hsu, S. H.; Chang, Shoou-Jinn |
| 國立成功大學 |
2004-03-01 |
Modulated beam growth method for MBE grown GaN layers
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Liu, K. T.; Tezuka, T.; Sugita, S.; Watari, Y.; Horikoshi, Y.; Su, Yan-Kuin; Chang, Shoou-Jinn |
Showing items 356-380 of 542 (22 Page(s) Totally)
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