|
"su yan kuin"的相关文件
显示项目 391-440 / 542 (共11页) << < 2 3 4 5 6 7 8 9 10 11 > >> 每页显示[10|25|50]项目
| 國立成功大學 |
2003-12 |
Nitride-based LEDs with p-InGaN capping layer
|
Chang, Shoou-Jinn; Chen, C. H.; Chang, Ping-Chuan; Su, Yan-Kuin; Chen, Ping-Cheng; Jhou, Y. D.; Hung, H.; Wang, S. M.; Huang, Bohr-Ran |
| 國立成功大學 |
2003-12 |
Growth of Be-doped p-type GaN under invariant polarity conditions
|
Sugita, Shigenobu; Watari, Yasumasa; Yoshizawa, Ginga; Sodesawa, Jun; Yamamizu, Hiroshi; Liu, Kuan-Ting; Su, Yan-Kuin; Horikoshi, Yoshiji |
| 國立成功大學 |
2003-12 |
High transconductance AlGaN/GaN MOSHFETs with photo-CVD gate oxide
|
Wang, Chun-Kai; Lin, Tien-Kun; Chiou, Yu-Zung; Chang, Shoou-Jinn; Su, Yan-Kuin; Kuo, Cheng-Huang; Ko, Tsun-Kai |
| 國立成功大學 |
2003-11 |
High electrostatic discharge protection of InGaN/GaN MQW LEDs by using GaN Schottky diodes
|
Chen, Chin-Hsiang; Chang, Shoou-Jinn; Su, Yan-Kuin |
| 國立成功大學 |
2003-11 |
In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer
|
Wu, Long; Chang, Shoou-Jinn; Su, Yan-Kuin; Chuang, Ricky Wen-kuei; Hsu, Y. P.; Kuo, Chih-Hung; Lai, W. C.; Wen, Ten-Chin; Tsai, J. M.; Sheu, Jinn-Kong |
| 國立成功大學 |
2003-11 |
Thermal resistance variation of HBT with high junction temperature and bias condition
|
Su, Yan-Kuin; Wei, Sun-Chin; Chang, Lee-Sheng; Wang, Ray-Lu; Wang, Charles J. |
| 國立成功大學 |
2003-11 |
Elimination of burn-in effect in carbon-doped InGaP/GaAs HBTs by hydrogen lateral diffusion
|
Su, Yan-Kuin; Chen, W. B.; Lin, C. L.; Wang, H. C.; Chen, S. M.; Liang, K. M. |
| 國立成功大學 |
2003-11 |
Nitride-based blue LEDs with GaN/SiN double buffer layers
|
Kuo, Chih-Hung; Chang, Shoou-Jinn; Su, Yan-Kuin; Wang, C. K.; Wu, Long; Sheu, Jinn-Kong; Wen, Ten-Chin; Lai, W. C.; Tsai, J. M.; Lin, C. C. |
| 國立成功大學 |
2003-11 |
High brightness InGaN green LEDs with an ITO on n(++)-SPS upper contact
|
Chang, C. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chih, Hungih-Hung; Lai, W. C.; Lin, Y. C.; Hsu, Y. P.; Shei, Shih-Chang; Tsai, J. M.; Lo, H. M.; Ke, J. C.; Shen, J. K. |
| 國立成功大學 |
2003-11 |
Highly reliable nitride-based LEDs with SPS plus ITO upper contacts
|
Chang, Shoou-Jinn; Chang, C. S.; Su, Yan-Kuin; Chuang, R. W.; Lin, Y. C.; Shei, Shih-Chang; Lo, H. M.; Lin, H. Y.; Ke, J. C. |
| 國立成功大學 |
2003-11 |
Nitride-based 2DEG photodetectors with a large AC responsivity
|
Chang, Shoou-Jinn; Kuan, T. M.; Ko, C. H.; Su, Yan-Kuin; Webb, J. B.; Bardwell, Jennifer A.; Liu, Y.; Tang, Haipeng; Lin, W. J.; Cherng, Ya-Tung; Lan, W. H. |
| 國立成功大學 |
2003-10 |
InGaN quantum dot photodetectors
|
Ji, L. W.; Su, Yan-Kuin; Chang, Shoou-Jinn; Liu, S. H.; Wang, C. K.; Tsai, S. T.; Fang, T. H.; Wu, Long; Xue, Qi-Kun |
| 國立成功大學 |
2003-10 |
Flicker noise of GaN-based heterostructure field-effect transistors with Si-doped AlGaN carrier injection layer
|
Su, Yan-Kuin; Wei, Sun-Chin; Wang, R. L.; Chang, Shoou-Jinn; Ko, C. H.; Kuan, T. M. |
| 國立成功大學 |
2003-10 |
Improvement of AlGaInP light emitting diode by sulfide passivation
|
Su, Yan-Kuin; Wang, H. C.; Lin, C. L.; Chen, W. B.; Chen, S. M. |
| 國立成功大學 |
2003-10 |
Fabrication of InGaP/Al0.98Ga0.02As/GaAs oxide-confined collector-up heterojunction bipolar transistors
|
Chen, Wen-Bin; Su, Yan-Kuin; Lin, C. L.; Wang, Hsin-Chuan; Chen, Shi-Ming; Su, Juh-Yuh; Wu, Meng-Chyi |
| 國立成功大學 |
2003-09-28 |
Two-step epitaxial lateral overgrowth of GaN
|
Ko, C. H.; Su, Yan-Kuin; Chang, Shoou-Jinn; Tsai, Tzong-Yow; Kuan, T. M.; Lan, W. H.; Lin, J. C.; Lin, W. J.; Cherng, Ya-Tung; Webb, J. B. |
| 國立成功大學 |
2003-09 |
High optical-gain AlGaN/GaN 2 dimensional electron gas photodetectors
|
Kuan, Ta-Ming; Chang, Shoou-Jinn; Su, Yan-Kuin; Ko, Chih-Hsin; Webb, James B.; Bardwell, Jennifer A.; Liu, Ying; Tang, Haipeng; Lin, Web-Jen; Cherng, Ya-Tung; Lan, Wen-How |
| 國立成功大學 |
2003-09 |
A novel method to realize InGaN self-assembled quantum dots by metalorganic chemical vapor deposition
|
Ji, Liang-Wen; Su, Yan-Kuin; Chang, Shoou-Jinn; Wu, Liang-Wen; Fang, Te-Hua; Xue, Qi-Kun; Lai, Wei-Chi; Chiou, Yu-Zung |
| 國立成功大學 |
2003-09 |
Nitride-based LEDs fabricated on patterned sapphire substrates
|
Chang, Shoou-Jinn; Lin, Y. C.; Su, Yan-Kuin; Chang, C. S.; Wen, Ten-Chin; Shei, Shih-Chang; Ke, J. C.; Kuo, C. W.; Chen, S. C.; Liu, C. H. |
| 國立成功大學 |
2003-09 |
High power nitride based light emitting diodes with Ni/ITO p-type contacts
|
Lin, Y. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chang, C. S.; Shei, Shih-Chang; Ke, J. C.; Lo, H. M.; Chen, S. C.; Kuo, C. W. |
| 國立成功大學 |
2003-08-01 |
Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
|
Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Su, Yan-Kuin; Chang, Shoou-Jinn; Kao, C. J.; Tun, Chun-Ju; Chen, M. G.; Chang, W. H.; Chi, Gou-Chung; Tsai, J. M. |
| 國立成功大學 |
2003-08-01 |
Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
|
Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. M. |
| 國立成功大學 |
2003-08 |
Nitride-based green light-emitting diodes with high temperature GaN barrier layers
|
Wu, Long; Chang, Shoou-Jinn; Su, Yan-Kuin; Chuang, Ricky Wen-kuei; Wen, Ten-Chin; Kuo, Chih-Hung; Lai, W. C.; Chang, C. S.; Tsai, J. M.; Sheu, Jinn-Kong |
| 國立成功大學 |
2003-08 |
Photo-CVD SiO2 layers on AlGaN and AlGaN-GaN MOSHFET
|
Chiou, Yu-Zung; Chang, Shoou-Jinn; Su, Yan-Kuin; Wang, Chun-Kai; Lin, Tien-Kun; Huang, Bohr-Ran |
| 國立成功大學 |
2003-07-25 |
Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching
|
Su, Yan-Kuin; Chang, Shoou-Jinn; Kuan, T. M.; Ko, C. H.; Webb, J. B.; Lan, W. H.; Cherng, Ya-Tung; Chen, S. C. |
| 國立成功大學 |
2003-07-15 |
The characteristics of photo-CVD SiO2 and its application on SiC MIS UV photodetectors
|
Liu, Chun-Hsing; Chang, Chia-Sheng; Chang, Shoou-Jinn; Su, Yan-Kuin; Chiou, Yu-Zung; Liu, Sen-Hai; Huang, Bohr-Ran; Chang, C. S. |
| 國立成功大學 |
2003-07-15 |
High quality GaN epitaxial layers grown by modulated beam growth method
|
Liu, K. T.; Tezuka, T.; Sugita, S.; Watari, Y.; Horikoshi, Y.; Su, Yan-Kuin; Chang, Shoou-Jinn |
| 國立成功大學 |
2003-07-15 |
Nitride-based HFETs with carrier confinement layers
|
Su, Yan-Kuin; Chang, Shoou-Jinn; Kuan, T. M.; Ko, C. H.; Webb, J. B.; Lan, W. H.; Cherng, Ya-Tung; Chen, S. C. |
| 國立成功大學 |
2003-07-01 |
AlGaInP light emitting diode with a modulation-doped superlattice
|
Su, Yan-Kuin; Wang, H. C.; Lin, C. L.; Chen, W. B.; Chen, S. M. |
| 國立成功大學 |
2003-07 |
Nitride-based green light emitting diodes grown by temperature ramping
|
Liu, C. H.; Su, Yan-Kuin; Wen, Ten-Chin; Chang, Shoou-Jinn; Chuang, R. W. |
| 國立成功大學 |
2003-06-02 |
Observation of self-organized superlattice in AlGaInAsSb pentanary alloys
|
Jaw, D. H.; Chang, J. R.; Su, Yan-Kuin |
| 國立成功大學 |
2003-06 |
AlGaN/GaN modulation-doped field-effect transistors with an Mg-doped carrier confinement layer
|
Chang, Shoou-Jinn; Wei, Sun-Chin; Su, Yan-Kuin; Liu, Chun-Hsing; Chen, Shih-Chih; Liaw, Uang-Heay; Tsai, Tzong-Yow; Hsu, Tzu-Hsuan |
| 國立成功大學 |
2003-06 |
InGaN/GaN light-emitting diodes with rapidly thermal-annealed Ni/ITO p-contacts
|
Chang, Chia-Sheng; Chang, Shoou-Jinn; Su, Yan-Kuin; Chiou, Yu-Zung; Lin, Yi-Chao; Hsu, Yu-Pin; Shei, Shih-Chang; Lo, Hsin-Ming; Ke, Jung-Chin; Chen, Shih-Chih; Liu, Chun-Hsing |
| 國立成功大學 |
2003-06 |
Tunnelling efficiency of n(+)-InGaN/GaN short period superlattice tunnelling contact layer for nitride-based light emitting diodes
|
Liu, C. H.; Su, Yan-Kuin; Wu, L. W.; Chang, Shoou-Jinn; Chuang, R. W. |
| 國立成功大學 |
2003-05-29 |
Investigations of low-frequency noise of GaN-based heterostructure field-effect transistors
|
Wei, S. C.; Su, Yan-Kuin; Kuan, T.; Wang, R. L.; Chang, Shoou-Jinn; Ko, C. H.; Webb, James B.; Bardwell, Jennifer A. |
| 國立成功大學 |
2003-05 |
Nitride-based multiquantum well p-n junction photodiodes
|
Su, Yan-Kuin; Chang, Shoou-Jinn; Chiou, Yu-Zung; Tsai, Tzong-Yow; Gong, Jeng; Lin, Yi-Chao; Liu, Sen-Hai; Chang, Chia-Sheng |
| 國立成功大學 |
2003-05 |
InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts
|
Lin, Y. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsai, Tzong-Yow; Chang, C. S.; Shei, Shih-Chang; Kuo, C. W.; Chen, S. C. |
| 國立成功大學 |
2003-05 |
Visible-blind GaN p-i-n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure
|
Yeh, L. S.; Lee, M. L.; Sheu, Jinn-Kong; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Chang, Shoou-Jinn; Su, Yan-Kuin |
| 國立成功大學 |
2003-05 |
Oxide confined collector-up heterojunction bipolar transistors
|
Chen, Wen-Bin; Su, Yan-Kuin; Lin, Chun-Liang; Wang, Hsin-Chuan; Su, Juh-Yuh; Wu, Meng-Chi; Chen, Shi-Ming; Chen, Hong-Ren |
| 國立成功大學 |
2003-05 |
High detectivity InGaN-GaN multiquantum well p-n junction photodiodes
|
Chiou, Yu-Zung; Su, Yan-Kuin; Chang, Shoou-Jinn; Gong, Jeng; Lin, Yi-Chao; Liu, Sen-Hai; Chang, Chia-Sheng |
| 國立成功大學 |
2003-05 |
Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer
|
Sheu, Jinn-Kong; Kao, C. J.; Lee, M. L.; Lai, W. C.; Yeh, L. S.; Chi, Gou-Chung; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsa, J. M. |
| 國立成功大學 |
2003-05 |
InGaN/GaN light-emitting diodes with a reflector at the backside of sapphire substrates
|
Hsu, Y. P.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chang, C. S.; Shei, Shih-Chang; Lin, Y. C.; Kuo, C. H.; Wu, L. W.; Chen, S. C. |
| 國立成功大學 |
2003-05 |
AlGaN/GaN metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition SiO2 gate oxide
|
Wang, Chun-Kai; Chiou, Yu-Zung; Chang, Shoou-Jinn; Su, Yan-Kuin; Huang, Bohr-Ran; Lin, Tien-Kun; Chen, Shih-Chih |
| 國立成功大學 |
2003-05 |
InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer
|
Wu, L. W.; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsai, T. Y.; Wen, Ten-Chin; Kuo, C. H.; Lai, W. C.; Sheu, Jinn-Kong; Tsai, J. M.; Chen, S. C.; Huang, B. R. |
| 國立成功大學 |
2003-05 |
InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping
|
Wen, Ten-Chin; Chang, Shoou-Jinn; Su, Yan-Kuin; Wu, L. W.; Kuo, C. H.; Lai, W. C.; Sheu, Jinn-Kong; Tsai, T. Y. |
| 國立成功大學 |
2003-05 |
The properties of photo chemical-vapor deposition SiO2 and its application in GaN metal-insulator semiconductor ultraviolet photodetectors
|
Chiou, Yu-Zung; Su, Yan-Kuin; Chang, Shoou-Jinn; Gong, Jeng; Chang, Chia-Sheng; Liu, Sen-Hai |
| 國立成功大學 |
2003-04-29 |
The characteristics of different transparent electrodes on GaN photodetectors
|
Chiou, Yu-Zung; Chiou, Jung-Ra; Su, Yan-Kuin; Chang, Shoou-Jinn; Huang, Bohr-Ran; Chang, Chia-Shng; Lin, Yi-Chao |
| 國立成功大學 |
2003-04-29 |
Liquid phase deposited SiO2 on GaN
|
Wu, H. R.; Lee, K. W.; Nian, T. B.; Chou, Dei-Wei; Wu, J. J. H.; Wang, Yeong-Her; Houng, Mau-Phon; Sze, P. W.; Su, Yan-Kuin; Chang, Shoou-Jinn; Ho, C. H.; Chiang, Chung-I; Cherng, Ya-Tung; Juang, F. S.; Wen, Ten-Chin; Lee, W. I.; Chyi, J. I. |
| 國立成功大學 |
2003-04-28 |
GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
|
Lee, M. L.; Sheu, J. K.; Lai, W. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. M. |
| 國立成功大學 |
2003-04-14 |
Fabrication of oxide-confined collector-up heterojunction bipolar transistors
|
Chen, Wen-Bin; Su, Yan-Kuin; Su, Juh-Yuh; Wu, Meng-Chi; Lin, Chun-Liang; Wang, Hsin-Chuan; Chen, Shi-Ming; Chen, Hong-Ren |
显示项目 391-440 / 542 (共11页) << < 2 3 4 5 6 7 8 9 10 11 > >> 每页显示[10|25|50]项目
|