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Showing items 406-430 of 542 (22 Page(s) Totally)
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| 國立成功大學 |
2003-09-28 |
Two-step epitaxial lateral overgrowth of GaN
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Ko, C. H.; Su, Yan-Kuin; Chang, Shoou-Jinn; Tsai, Tzong-Yow; Kuan, T. M.; Lan, W. H.; Lin, J. C.; Lin, W. J.; Cherng, Ya-Tung; Webb, J. B. |
| 國立成功大學 |
2003-09 |
High optical-gain AlGaN/GaN 2 dimensional electron gas photodetectors
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Kuan, Ta-Ming; Chang, Shoou-Jinn; Su, Yan-Kuin; Ko, Chih-Hsin; Webb, James B.; Bardwell, Jennifer A.; Liu, Ying; Tang, Haipeng; Lin, Web-Jen; Cherng, Ya-Tung; Lan, Wen-How |
| 國立成功大學 |
2003-09 |
A novel method to realize InGaN self-assembled quantum dots by metalorganic chemical vapor deposition
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Ji, Liang-Wen; Su, Yan-Kuin; Chang, Shoou-Jinn; Wu, Liang-Wen; Fang, Te-Hua; Xue, Qi-Kun; Lai, Wei-Chi; Chiou, Yu-Zung |
| 國立成功大學 |
2003-09 |
Nitride-based LEDs fabricated on patterned sapphire substrates
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Chang, Shoou-Jinn; Lin, Y. C.; Su, Yan-Kuin; Chang, C. S.; Wen, Ten-Chin; Shei, Shih-Chang; Ke, J. C.; Kuo, C. W.; Chen, S. C.; Liu, C. H. |
| 國立成功大學 |
2003-09 |
High power nitride based light emitting diodes with Ni/ITO p-type contacts
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Lin, Y. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chang, C. S.; Shei, Shih-Chang; Ke, J. C.; Lo, H. M.; Chen, S. C.; Kuo, C. W. |
| 國立成功大學 |
2003-08-01 |
Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
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Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Su, Yan-Kuin; Chang, Shoou-Jinn; Kao, C. J.; Tun, Chun-Ju; Chen, M. G.; Chang, W. H.; Chi, Gou-Chung; Tsai, J. M. |
| 國立成功大學 |
2003-08-01 |
Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
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Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. M. |
| 國立成功大學 |
2003-08 |
Nitride-based green light-emitting diodes with high temperature GaN barrier layers
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Wu, Long; Chang, Shoou-Jinn; Su, Yan-Kuin; Chuang, Ricky Wen-kuei; Wen, Ten-Chin; Kuo, Chih-Hung; Lai, W. C.; Chang, C. S.; Tsai, J. M.; Sheu, Jinn-Kong |
| 國立成功大學 |
2003-08 |
Photo-CVD SiO2 layers on AlGaN and AlGaN-GaN MOSHFET
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Chiou, Yu-Zung; Chang, Shoou-Jinn; Su, Yan-Kuin; Wang, Chun-Kai; Lin, Tien-Kun; Huang, Bohr-Ran |
| 國立成功大學 |
2003-07-25 |
Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching
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Su, Yan-Kuin; Chang, Shoou-Jinn; Kuan, T. M.; Ko, C. H.; Webb, J. B.; Lan, W. H.; Cherng, Ya-Tung; Chen, S. C. |
| 國立成功大學 |
2003-07-15 |
The characteristics of photo-CVD SiO2 and its application on SiC MIS UV photodetectors
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Liu, Chun-Hsing; Chang, Chia-Sheng; Chang, Shoou-Jinn; Su, Yan-Kuin; Chiou, Yu-Zung; Liu, Sen-Hai; Huang, Bohr-Ran; Chang, C. S. |
| 國立成功大學 |
2003-07-15 |
High quality GaN epitaxial layers grown by modulated beam growth method
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Liu, K. T.; Tezuka, T.; Sugita, S.; Watari, Y.; Horikoshi, Y.; Su, Yan-Kuin; Chang, Shoou-Jinn |
| 國立成功大學 |
2003-07-15 |
Nitride-based HFETs with carrier confinement layers
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Su, Yan-Kuin; Chang, Shoou-Jinn; Kuan, T. M.; Ko, C. H.; Webb, J. B.; Lan, W. H.; Cherng, Ya-Tung; Chen, S. C. |
| 國立成功大學 |
2003-07-01 |
AlGaInP light emitting diode with a modulation-doped superlattice
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Su, Yan-Kuin; Wang, H. C.; Lin, C. L.; Chen, W. B.; Chen, S. M. |
| 國立成功大學 |
2003-07 |
Nitride-based green light emitting diodes grown by temperature ramping
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Liu, C. H.; Su, Yan-Kuin; Wen, Ten-Chin; Chang, Shoou-Jinn; Chuang, R. W. |
| 國立成功大學 |
2003-06-02 |
Observation of self-organized superlattice in AlGaInAsSb pentanary alloys
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Jaw, D. H.; Chang, J. R.; Su, Yan-Kuin |
| 國立成功大學 |
2003-06 |
AlGaN/GaN modulation-doped field-effect transistors with an Mg-doped carrier confinement layer
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Chang, Shoou-Jinn; Wei, Sun-Chin; Su, Yan-Kuin; Liu, Chun-Hsing; Chen, Shih-Chih; Liaw, Uang-Heay; Tsai, Tzong-Yow; Hsu, Tzu-Hsuan |
| 國立成功大學 |
2003-06 |
InGaN/GaN light-emitting diodes with rapidly thermal-annealed Ni/ITO p-contacts
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Chang, Chia-Sheng; Chang, Shoou-Jinn; Su, Yan-Kuin; Chiou, Yu-Zung; Lin, Yi-Chao; Hsu, Yu-Pin; Shei, Shih-Chang; Lo, Hsin-Ming; Ke, Jung-Chin; Chen, Shih-Chih; Liu, Chun-Hsing |
| 國立成功大學 |
2003-06 |
Tunnelling efficiency of n(+)-InGaN/GaN short period superlattice tunnelling contact layer for nitride-based light emitting diodes
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Liu, C. H.; Su, Yan-Kuin; Wu, L. W.; Chang, Shoou-Jinn; Chuang, R. W. |
| 國立成功大學 |
2003-05-29 |
Investigations of low-frequency noise of GaN-based heterostructure field-effect transistors
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Wei, S. C.; Su, Yan-Kuin; Kuan, T.; Wang, R. L.; Chang, Shoou-Jinn; Ko, C. H.; Webb, James B.; Bardwell, Jennifer A. |
| 國立成功大學 |
2003-05 |
Nitride-based multiquantum well p-n junction photodiodes
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Su, Yan-Kuin; Chang, Shoou-Jinn; Chiou, Yu-Zung; Tsai, Tzong-Yow; Gong, Jeng; Lin, Yi-Chao; Liu, Sen-Hai; Chang, Chia-Sheng |
| 國立成功大學 |
2003-05 |
InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts
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Lin, Y. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsai, Tzong-Yow; Chang, C. S.; Shei, Shih-Chang; Kuo, C. W.; Chen, S. C. |
| 國立成功大學 |
2003-05 |
Visible-blind GaN p-i-n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure
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Yeh, L. S.; Lee, M. L.; Sheu, Jinn-Kong; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Chang, Shoou-Jinn; Su, Yan-Kuin |
| 國立成功大學 |
2003-05 |
Oxide confined collector-up heterojunction bipolar transistors
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Chen, Wen-Bin; Su, Yan-Kuin; Lin, Chun-Liang; Wang, Hsin-Chuan; Su, Juh-Yuh; Wu, Meng-Chi; Chen, Shi-Ming; Chen, Hong-Ren |
| 國立成功大學 |
2003-05 |
High detectivity InGaN-GaN multiquantum well p-n junction photodiodes
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Chiou, Yu-Zung; Su, Yan-Kuin; Chang, Shoou-Jinn; Gong, Jeng; Lin, Yi-Chao; Liu, Sen-Hai; Chang, Chia-Sheng |
Showing items 406-430 of 542 (22 Page(s) Totally)
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View [10|25|50] records per page
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