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Taiwan Academic Institutional Repository >
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"su yan kuin"
Showing items 416-440 of 542 (22 Page(s) Totally)
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| 國立成功大學 |
2003-07-15 |
The characteristics of photo-CVD SiO2 and its application on SiC MIS UV photodetectors
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Liu, Chun-Hsing; Chang, Chia-Sheng; Chang, Shoou-Jinn; Su, Yan-Kuin; Chiou, Yu-Zung; Liu, Sen-Hai; Huang, Bohr-Ran; Chang, C. S. |
| 國立成功大學 |
2003-07-15 |
High quality GaN epitaxial layers grown by modulated beam growth method
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Liu, K. T.; Tezuka, T.; Sugita, S.; Watari, Y.; Horikoshi, Y.; Su, Yan-Kuin; Chang, Shoou-Jinn |
| 國立成功大學 |
2003-07-15 |
Nitride-based HFETs with carrier confinement layers
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Su, Yan-Kuin; Chang, Shoou-Jinn; Kuan, T. M.; Ko, C. H.; Webb, J. B.; Lan, W. H.; Cherng, Ya-Tung; Chen, S. C. |
| 國立成功大學 |
2003-07-01 |
AlGaInP light emitting diode with a modulation-doped superlattice
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Su, Yan-Kuin; Wang, H. C.; Lin, C. L.; Chen, W. B.; Chen, S. M. |
| 國立成功大學 |
2003-07 |
Nitride-based green light emitting diodes grown by temperature ramping
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Liu, C. H.; Su, Yan-Kuin; Wen, Ten-Chin; Chang, Shoou-Jinn; Chuang, R. W. |
| 國立成功大學 |
2003-06-02 |
Observation of self-organized superlattice in AlGaInAsSb pentanary alloys
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Jaw, D. H.; Chang, J. R.; Su, Yan-Kuin |
| 國立成功大學 |
2003-06 |
AlGaN/GaN modulation-doped field-effect transistors with an Mg-doped carrier confinement layer
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Chang, Shoou-Jinn; Wei, Sun-Chin; Su, Yan-Kuin; Liu, Chun-Hsing; Chen, Shih-Chih; Liaw, Uang-Heay; Tsai, Tzong-Yow; Hsu, Tzu-Hsuan |
| 國立成功大學 |
2003-06 |
InGaN/GaN light-emitting diodes with rapidly thermal-annealed Ni/ITO p-contacts
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Chang, Chia-Sheng; Chang, Shoou-Jinn; Su, Yan-Kuin; Chiou, Yu-Zung; Lin, Yi-Chao; Hsu, Yu-Pin; Shei, Shih-Chang; Lo, Hsin-Ming; Ke, Jung-Chin; Chen, Shih-Chih; Liu, Chun-Hsing |
| 國立成功大學 |
2003-06 |
Tunnelling efficiency of n(+)-InGaN/GaN short period superlattice tunnelling contact layer for nitride-based light emitting diodes
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Liu, C. H.; Su, Yan-Kuin; Wu, L. W.; Chang, Shoou-Jinn; Chuang, R. W. |
| 國立成功大學 |
2003-05-29 |
Investigations of low-frequency noise of GaN-based heterostructure field-effect transistors
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Wei, S. C.; Su, Yan-Kuin; Kuan, T.; Wang, R. L.; Chang, Shoou-Jinn; Ko, C. H.; Webb, James B.; Bardwell, Jennifer A. |
| 國立成功大學 |
2003-05 |
Nitride-based multiquantum well p-n junction photodiodes
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Su, Yan-Kuin; Chang, Shoou-Jinn; Chiou, Yu-Zung; Tsai, Tzong-Yow; Gong, Jeng; Lin, Yi-Chao; Liu, Sen-Hai; Chang, Chia-Sheng |
| 國立成功大學 |
2003-05 |
InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts
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Lin, Y. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsai, Tzong-Yow; Chang, C. S.; Shei, Shih-Chang; Kuo, C. W.; Chen, S. C. |
| 國立成功大學 |
2003-05 |
Visible-blind GaN p-i-n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure
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Yeh, L. S.; Lee, M. L.; Sheu, Jinn-Kong; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Chang, Shoou-Jinn; Su, Yan-Kuin |
| 國立成功大學 |
2003-05 |
Oxide confined collector-up heterojunction bipolar transistors
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Chen, Wen-Bin; Su, Yan-Kuin; Lin, Chun-Liang; Wang, Hsin-Chuan; Su, Juh-Yuh; Wu, Meng-Chi; Chen, Shi-Ming; Chen, Hong-Ren |
| 國立成功大學 |
2003-05 |
High detectivity InGaN-GaN multiquantum well p-n junction photodiodes
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Chiou, Yu-Zung; Su, Yan-Kuin; Chang, Shoou-Jinn; Gong, Jeng; Lin, Yi-Chao; Liu, Sen-Hai; Chang, Chia-Sheng |
| 國立成功大學 |
2003-05 |
Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer
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Sheu, Jinn-Kong; Kao, C. J.; Lee, M. L.; Lai, W. C.; Yeh, L. S.; Chi, Gou-Chung; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsa, J. M. |
| 國立成功大學 |
2003-05 |
InGaN/GaN light-emitting diodes with a reflector at the backside of sapphire substrates
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Hsu, Y. P.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chang, C. S.; Shei, Shih-Chang; Lin, Y. C.; Kuo, C. H.; Wu, L. W.; Chen, S. C. |
| 國立成功大學 |
2003-05 |
AlGaN/GaN metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition SiO2 gate oxide
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Wang, Chun-Kai; Chiou, Yu-Zung; Chang, Shoou-Jinn; Su, Yan-Kuin; Huang, Bohr-Ran; Lin, Tien-Kun; Chen, Shih-Chih |
| 國立成功大學 |
2003-05 |
InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer
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Wu, L. W.; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsai, T. Y.; Wen, Ten-Chin; Kuo, C. H.; Lai, W. C.; Sheu, Jinn-Kong; Tsai, J. M.; Chen, S. C.; Huang, B. R. |
| 國立成功大學 |
2003-05 |
InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping
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Wen, Ten-Chin; Chang, Shoou-Jinn; Su, Yan-Kuin; Wu, L. W.; Kuo, C. H.; Lai, W. C.; Sheu, Jinn-Kong; Tsai, T. Y. |
| 國立成功大學 |
2003-05 |
The properties of photo chemical-vapor deposition SiO2 and its application in GaN metal-insulator semiconductor ultraviolet photodetectors
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Chiou, Yu-Zung; Su, Yan-Kuin; Chang, Shoou-Jinn; Gong, Jeng; Chang, Chia-Sheng; Liu, Sen-Hai |
| 國立成功大學 |
2003-04-29 |
The characteristics of different transparent electrodes on GaN photodetectors
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Chiou, Yu-Zung; Chiou, Jung-Ra; Su, Yan-Kuin; Chang, Shoou-Jinn; Huang, Bohr-Ran; Chang, Chia-Shng; Lin, Yi-Chao |
| 國立成功大學 |
2003-04-29 |
Liquid phase deposited SiO2 on GaN
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Wu, H. R.; Lee, K. W.; Nian, T. B.; Chou, Dei-Wei; Wu, J. J. H.; Wang, Yeong-Her; Houng, Mau-Phon; Sze, P. W.; Su, Yan-Kuin; Chang, Shoou-Jinn; Ho, C. H.; Chiang, Chung-I; Cherng, Ya-Tung; Juang, F. S.; Wen, Ten-Chin; Lee, W. I.; Chyi, J. I. |
| 國立成功大學 |
2003-04-28 |
GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
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Lee, M. L.; Sheu, J. K.; Lai, W. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. M. |
| 國立成功大學 |
2003-04-14 |
Fabrication of oxide-confined collector-up heterojunction bipolar transistors
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Chen, Wen-Bin; Su, Yan-Kuin; Su, Juh-Yuh; Wu, Meng-Chi; Lin, Chun-Liang; Wang, Hsin-Chuan; Chen, Shi-Ming; Chen, Hong-Ren |
Showing items 416-440 of 542 (22 Page(s) Totally)
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