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"su yan kuin"的相關文件
顯示項目 426-450 / 542 (共22頁)
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| 國立成功大學 |
2003-05 |
Nitride-based multiquantum well p-n junction photodiodes
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Su, Yan-Kuin; Chang, Shoou-Jinn; Chiou, Yu-Zung; Tsai, Tzong-Yow; Gong, Jeng; Lin, Yi-Chao; Liu, Sen-Hai; Chang, Chia-Sheng |
| 國立成功大學 |
2003-05 |
InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts
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Lin, Y. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsai, Tzong-Yow; Chang, C. S.; Shei, Shih-Chang; Kuo, C. W.; Chen, S. C. |
| 國立成功大學 |
2003-05 |
Visible-blind GaN p-i-n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure
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Yeh, L. S.; Lee, M. L.; Sheu, Jinn-Kong; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Chang, Shoou-Jinn; Su, Yan-Kuin |
| 國立成功大學 |
2003-05 |
Oxide confined collector-up heterojunction bipolar transistors
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Chen, Wen-Bin; Su, Yan-Kuin; Lin, Chun-Liang; Wang, Hsin-Chuan; Su, Juh-Yuh; Wu, Meng-Chi; Chen, Shi-Ming; Chen, Hong-Ren |
| 國立成功大學 |
2003-05 |
High detectivity InGaN-GaN multiquantum well p-n junction photodiodes
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Chiou, Yu-Zung; Su, Yan-Kuin; Chang, Shoou-Jinn; Gong, Jeng; Lin, Yi-Chao; Liu, Sen-Hai; Chang, Chia-Sheng |
| 國立成功大學 |
2003-05 |
Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer
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Sheu, Jinn-Kong; Kao, C. J.; Lee, M. L.; Lai, W. C.; Yeh, L. S.; Chi, Gou-Chung; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsa, J. M. |
| 國立成功大學 |
2003-05 |
InGaN/GaN light-emitting diodes with a reflector at the backside of sapphire substrates
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Hsu, Y. P.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chang, C. S.; Shei, Shih-Chang; Lin, Y. C.; Kuo, C. H.; Wu, L. W.; Chen, S. C. |
| 國立成功大學 |
2003-05 |
AlGaN/GaN metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition SiO2 gate oxide
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Wang, Chun-Kai; Chiou, Yu-Zung; Chang, Shoou-Jinn; Su, Yan-Kuin; Huang, Bohr-Ran; Lin, Tien-Kun; Chen, Shih-Chih |
| 國立成功大學 |
2003-05 |
InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer
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Wu, L. W.; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsai, T. Y.; Wen, Ten-Chin; Kuo, C. H.; Lai, W. C.; Sheu, Jinn-Kong; Tsai, J. M.; Chen, S. C.; Huang, B. R. |
| 國立成功大學 |
2003-05 |
InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping
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Wen, Ten-Chin; Chang, Shoou-Jinn; Su, Yan-Kuin; Wu, L. W.; Kuo, C. H.; Lai, W. C.; Sheu, Jinn-Kong; Tsai, T. Y. |
| 國立成功大學 |
2003-05 |
The properties of photo chemical-vapor deposition SiO2 and its application in GaN metal-insulator semiconductor ultraviolet photodetectors
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Chiou, Yu-Zung; Su, Yan-Kuin; Chang, Shoou-Jinn; Gong, Jeng; Chang, Chia-Sheng; Liu, Sen-Hai |
| 國立成功大學 |
2003-04-29 |
The characteristics of different transparent electrodes on GaN photodetectors
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Chiou, Yu-Zung; Chiou, Jung-Ra; Su, Yan-Kuin; Chang, Shoou-Jinn; Huang, Bohr-Ran; Chang, Chia-Shng; Lin, Yi-Chao |
| 國立成功大學 |
2003-04-29 |
Liquid phase deposited SiO2 on GaN
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Wu, H. R.; Lee, K. W.; Nian, T. B.; Chou, Dei-Wei; Wu, J. J. H.; Wang, Yeong-Her; Houng, Mau-Phon; Sze, P. W.; Su, Yan-Kuin; Chang, Shoou-Jinn; Ho, C. H.; Chiang, Chung-I; Cherng, Ya-Tung; Juang, F. S.; Wen, Ten-Chin; Lee, W. I.; Chyi, J. I. |
| 國立成功大學 |
2003-04-28 |
GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
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Lee, M. L.; Sheu, J. K.; Lai, W. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. M. |
| 國立成功大學 |
2003-04-14 |
Fabrication of oxide-confined collector-up heterojunction bipolar transistors
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Chen, Wen-Bin; Su, Yan-Kuin; Su, Juh-Yuh; Wu, Meng-Chi; Lin, Chun-Liang; Wang, Hsin-Chuan; Chen, Shi-Ming; Chen, Hong-Ren |
| 國立成功大學 |
2003-04 |
GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts
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Chang, Shoou-Jinn; Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Su, Yan-Kuin; Chang, C. S.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. A. |
| 國立成功大學 |
2003-04 |
GaN metal-semiconductor interface and its applications in GaN and InGaN metal-semiconductor-metal photodetectors
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Chiou, Yu-Zung; Su, Yan-Kuin; Chang, Shoou-Jinn; Chen, Chin-Hsiang |
| 國立成功大學 |
2003-04 |
GaN-based light emitting diodes with si-doped In0.23Ga0.77N/GaN short period superlattice current spreading layer
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Kuo, Cheng-Huang; Chang, Shoou-Jinn; Su, Yan-Kuin; Wu, Liang-Wen; Chen, Jone F.; Sheu, Jinn-Kong; Tsai, Ji-Ming |
| 國立成功大學 |
2003-04 |
High-indium-content InGaN/GaN multiple-quantum-well light-emitting diodes
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Chen, Chin-Hsiang; Chang, Shoou-Jinn; Su, Yan-Kuin |
| 國立成功大學 |
2003-04 |
GaN metal-semiconductor-metal visible-blind photodetectors with transparent indium-tin-oxide contact electrodes
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Su, Yan-Kuin; Juang, Fuh-Shyang; Chen, Min-Hong |
| 國立成功大學 |
2003-04 |
InGaN/GaN light-emitting diodes with ITO p-contact layers prepared by RF sputtering
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Chang, C. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Lin, Y. C.; Hsu, Y. P.; Shei, Shih-Chang; Chen, S. C.; Liu, C. H.; Liaw, U. H. |
| 國立成功大學 |
2003-04 |
n-UV plus blue/green/red white light emitting diode lamps
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Kuo, Cheng-Huang;Sheu, Jinn-Kong;Chang, Shoou-Jinn; Su, Yan-Kuin;Wu, Liang-Wen;Tsai, Ji-Ming;Liu, C. H.;Wu, R. K. |
| 國立成功大學 |
2003-03 |
Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes
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Chang, Shoou-Jinn; Chen, C. H.; Su, Yan-Kuin; Sheu, Jinn-Kong; Lai, W. C.; Tsai, J. M.; Liu, C. H.; Chen, S. C. |
| 國立成功大學 |
2003-02-28 |
Characterization of the InAsSb/GaSb superlattices by Fourier transform infrared spectroscopy
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Juang, Fuh-Shyang; Su, Yan-Kuin; Yu, Her-Yu; Liu, Kou-Ju |
| 國立成功大學 |
2003-02-25 |
Inductively coupled plasma etching of GaN using Cl-2/He gases
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Lin, Y. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Shei, Shih-Chang; Hsu, S. J. |
顯示項目 426-450 / 542 (共22頁)
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