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机构 日期 题名 作者
國立交通大學 2019-04-02T05:59:22Z The microstructure of As precipitates in Si delta-doped GaAs grown by low-temperature molecular beam epitaxy Hsieh, LZ; Huang, JH; Su, ZA; Guo, XJ; Shih, HC; Wu, MCY
國立交通大學 2014-12-08T15:49:15Z Arsenic precipitate accumulation in alternately Si/Be delta-doped GaAs grown by low-temperature molecular beam epitaxy Hsieh, LZ; Huang, JH; Su, ZA; Wu, MC
國立交通大學 2014-12-08T15:49:09Z Two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be-doped GaAs grown by low-temperature molecular beam epitaxy Su, ZA; Huang, JH; Hsieh, LZ; Lee, WI
國立交通大學 2014-12-08T15:49:08Z Formation of two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be doped GaAs with varying periods grown by low-temperature molecular beam epitaxy Su, ZA; Huang, JH; Lee, WI
國立交通大學 2014-12-08T15:01:20Z The microstructure of As precipitates in Si delta-doped GaAs grown by low-temperature molecular beam epitaxy Hsieh, LZ; Huang, JH; Su, ZA; Guo, XJ; Shih, HC; Wu, MCY

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