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Institution Date Title Author
國立交通大學 2019-04-02T05:58:59Z Improving electrical characteristics of W/HfO2/In0.53Ga0.47As gate stacks by altering deposition techniques Zade, D.; Kakushima, K.; Kanda, T.; Lin, Y. C.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Chang, E. Y.; Natori, K.; Hattori, T.; Iwai, H.
國立交通大學 2018-08-21T05:56:32Z Annealing Effect on the Electrical Properties of La2O3/InGaAs MOS Capacitors Kanda, T.; Zade, D.; Lin, Y. -C.; Kakushima, K.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Chang, E. Y.; Natori, K.; Hattori, T.; Iwai, H.
國立交通大學 2017-04-21T06:49:32Z Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure Funamiz, K.; Lin, Y. C.; Kakushima, K.; Ahmet, P.; Tsutsui, K.; Sugii, N.; Chang, E. Y.; Hattori, T.; Iwai, H.
國立交通大學 2014-12-08T15:43:26Z Improving electrical characteristics of W/HfO(2)/In(0.53)Ga(0.47)As gate stacks by altering deposition techniques Zade, D.; Kakushima, K.; Kanda, T.; Lin, Y. C.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Chang, E. Y.; Natori, K.; Hattori, T.; Iwai, H.

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