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Showing items 1-4 of 4 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:58:59Z |
Improving electrical characteristics of W/HfO2/In0.53Ga0.47As gate stacks by altering deposition techniques
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Zade, D.; Kakushima, K.; Kanda, T.; Lin, Y. C.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Chang, E. Y.; Natori, K.; Hattori, T.; Iwai, H. |
| 國立交通大學 |
2018-08-21T05:56:32Z |
Annealing Effect on the Electrical Properties of La2O3/InGaAs MOS Capacitors
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Kanda, T.; Zade, D.; Lin, Y. -C.; Kakushima, K.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Chang, E. Y.; Natori, K.; Hattori, T.; Iwai, H. |
| 國立交通大學 |
2017-04-21T06:49:32Z |
Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure
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Funamiz, K.; Lin, Y. C.; Kakushima, K.; Ahmet, P.; Tsutsui, K.; Sugii, N.; Chang, E. Y.; Hattori, T.; Iwai, H. |
| 國立交通大學 |
2014-12-08T15:43:26Z |
Improving electrical characteristics of W/HfO(2)/In(0.53)Ga(0.47)As gate stacks by altering deposition techniques
|
Zade, D.; Kakushima, K.; Kanda, T.; Lin, Y. C.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Chang, E. Y.; Natori, K.; Hattori, T.; Iwai, H. |
Showing items 1-4 of 4 (1 Page(s) Totally)
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