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| 國立臺灣大學 |
2004 |
A Compact Threshold Voltage Model for Gate Misalignment Effect of DG FD SOI NMOS Devices Considering Fringing Electric Field Effects
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Kuo, J.B.; Sun, E.C. |
| 國立臺灣大學 |
2003-11 |
Analysis of gate misalignment effect on the threshold voltage of double-gate (DG) ultrathin fully-depleted (FD) silicon-on-insulator (SOI) NMOS devices using a compact model considering fringing electric field effect
|
Kuo, J.B.; Sun, E.C.; Lin, M.T. |
| 臺大學術典藏 |
2003-11 |
Analysis of gate misalignment effect on the threshold voltage of double-gate (DG) ultrathin fully-depleted (FD) silicon-on-insulator (SOI) NMOS devices using a compact model considering fringing electric field effect
|
Kuo, J.B.; Sun, E.C.; Lin, M.T.Kuojb; Kuo, J.B.; Sun, E.C.; Lin, M.T.; KuoJB |
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