|
"sun jyc"的相關文件
顯示項目 1-6 / 6 (共1頁)
1
每頁顯示[10|25|50]項目
| 國立交通大學 |
2014-12-08T15:44:34Z |
Hot carrier reliability improvement by utilizing phosphorus transient enhanced diffusion for input/output devices of deep submicron CMOS technology
|
Wang, HCH; Diaz, CH; Liew, BK; Sun, JYC; Wang, TH |
| 國立交通大學 |
2014-12-08T15:43:22Z |
Improving the RF performance of 0.18 mu m CMOS with deep n-well implantation
|
Su, JG; Hsu, HM; Wong, SC; Chang, CY; Huang, TY; Sun, JYC |
| 國立交通大學 |
2014-12-08T15:42:55Z |
Arsenic/phosphorus LDD optimization by taking advantage of phosphorus transient enhanced diffusion for high voltage input/output CMOS devices
|
Wang, HCH; Wang, CC; Diaz, CH; Liew, BK; Sun, JYC; Wang, TH |
| 國立交通大學 |
2014-12-08T15:40:51Z |
A floating well method for exact capacitance-voltage measurement of nano technology
|
Su, HD; Chiou, BS; Wu, SY; Chang, MH; Lee, KH; Chen, YS; Chao, CP; See, YC; Sun, JYC |
| 國立交通大學 |
2014-12-08T15:40:26Z |
Characteristics of oxide breakdown and related impact on device of ultrathin (2.2 nm) silicon dioxide
|
Su, HD; Chiou, BS; Wu, SY; Chang, MH; Lee, KH; Chen, YS; Cha, CP; See, YC; Sun, JYC |
| 國立交通大學 |
2014-12-08T15:40:05Z |
Bi-mode breakdown test methodology of ultrathin oxide
|
Su, HD; Chiou, BS; Ko, CY; Wu, SY; Chang, MH; Lee, KH; Chen, YS; Chao, CP; See, YC; Sun, JYC |
顯示項目 1-6 / 6 (共1頁)
1
每頁顯示[10|25|50]項目
|
