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Showing items 1-10 of 34 (4 Page(s) Totally)
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| 國家衛生研究院 |
2019-05 |
Multi-labeled electrochemical sensor for cost-efficient detection of single nucleotide substitutions in folded nucleic acids
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Sun, SC;Dou, HY;Chuang, MC;Kolpashchikov, DM |
| 國立交通大學 |
2019-04-02T06:00:03Z |
Reduction of leakage current in chemical-vapor-deposited Ta2O5 thin films by furnace N2O annealing
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Sun, SC; Chen, TF |
| 國立交通大學 |
2019-04-02T05:59:33Z |
Electrical properties of O-2 and N-2 annealed (Ba,Sr)TiO3 thin films
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Tsai, MS; Sun, SC; Tseng, TY |
| 國立交通大學 |
2019-04-02T05:59:23Z |
Comparison of the diffusion barrier properties of chemical-vapor-deposited TaN and sputtered TaN between Cu and Si
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Tsai, MH; Sun, SC; Tsai, CE; Chuang, SH; Chiu, HT |
| 國立交通大學 |
2019-04-02T05:59:15Z |
METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF TANTALUM NITRIDE BY TERTBUTYLIMIDOTRIS(DIETHYLAMIDO)TANTALUM FOR ADVANCED METALLIZATION
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TSAI, MH; SUN, SC; CHIU, HT; TSAI, CE; CHUANG, SH |
| 國立交通大學 |
2019-04-02T05:58:30Z |
Leakage current reduction in chemical-vapor-deposited Ta2O5 films by rapid thermal annealing in N2O
|
Sun, SC; Chen, TF |
| 國家衛生研究院 |
2017-09 |
A mutation-resistant deoxyribozyme OR gate for highly selective detection of viral nucleic acids
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Kamar, O;Sun, SC;Lin, CH;Chung, WY;Lee, MS;Liao, YC;Kolpashchikov, DM;Chuang, MC |
| 國立交通大學 |
2014-12-08T15:46:54Z |
Effect of bottom electrode materials and annealing treatments on the electrical characteristics of Ba0.47Sr0.53TiO3 film capacitors
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Tsai, MS; Sun, SC; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:46:14Z |
Effect of bottom electrode materials on the electrical and reliability characteristics of (Ba, Sr)TiO3 capacitors
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Tsai, MS; Sun, SC; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:27:57Z |
THERMAL-OXIDATION OF LIGHTLY-DOPED AND HEAVILY-DOPED SILICON IN PURE N2O
|
SUN, SC; CHANG, HY |
Showing items 1-10 of 34 (4 Page(s) Totally)
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