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Showing items 26-34 of 34  (2 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:03:02Z Metal-organic chemical vapor deposition of tantalum nitride barrier layers for ULSI applications Tsai, MH; Sun, SC; Lee, CP; Chiu, HT; Tsai, CE; Chuang, SH; Wu, SC
國立交通大學 2014-12-08T15:02:53Z Effect of rapid thermal annealing on the electrical and physical properties of metalorganic chemical-vapor-deposited TiN Sun, SC; Tsai, MH
國立交通大學 2014-12-08T15:02:46Z Metalorganic chemical vapor deposition of tungsten nitride for advanced metallization Tsai, MH; Sun, SC; Chiu, HT; Chuang, SH
國立交通大學 2014-12-08T15:02:39Z Comparison of the diffusion barrier properties of chemical-vapor-deposited TaN and sputtered TaN between Cu and Si Tsai, MH; Sun, SC; Tsai, CE; Chuang, SH; Chiu, HT
國立交通大學 2014-12-08T15:02:33Z Leakage current reduction in chemical-vapor-deposited Ta2O5 films by rapid thermal annealing in N2O Sun, SC; Chen, TF
國立交通大學 2014-12-08T15:01:56Z Effects of electrode materials and annealing ambients on the electrical properties of TiO2 thin films by metalorganic chemical vapor deposition Sun, SC; Chen, TF
國立交通大學 2014-12-08T15:01:43Z Reduction of leakage current in chemical-vapor-deposited Ta2O5 thin films by furnace N2O annealing Sun, SC; Chen, TF
國立交通大學 2014-12-08T15:01:24Z Effect of oxygen to argon ratio on properties of (Ba,Sr)TiO3 thin films prepared by radio-frequency magnetron sputtering Tsai, MS; Sun, SC; Tseng, TY
國立交通大學 2014-12-08T15:01:10Z Electrical properties of O-2 and N-2 annealed (Ba,Sr)TiO3 thin films Tsai, MS; Sun, SC; Tseng, TY

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