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"sun sc"的相关文件
显示项目 11-34 / 34 (共1页)
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| 國立交通大學 |
2014-12-08T15:27:53Z |
RAPID THERMAL-OXIDATION OF LIGHTLY DOPED SILICON IN N2O
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SUN, SC; WANG, LS; YEH, FL; LAI, TS; LIN, YH |
| 國立交通大學 |
2014-12-08T15:27:51Z |
A NOVEL APPROACH FOR LEAKAGE CURRENT REDUCTION OF LPCVD TA(2)O(5) AND TIO(2) FILMS BY RAPID THERMAL N(2)O ANNEALING
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SUN, SC; CHEN, TF |
| 國立交通大學 |
2014-12-08T15:27:49Z |
CHARACTERIZATION OF CHEMICAL-MECHANICAL POLISHING DIELECTRICS FOR MULTILEVEL METALLIZATION
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SUN, SC; YEH, FL; TIEN, HZ |
| 國立交通大學 |
2014-12-08T15:27:48Z |
Performance of MOCVD tantalum nitride diffusion barrier for copper metallization
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Sun, SC; Tsai, MH; Tsai, CE; Chiu, HT |
| 國立交通大學 |
2014-12-08T15:27:48Z |
Rapid thermal chemical vapor deposition of in-situ nitrogen-doped polysilicon for dual gate CMOS
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Sun, SC; Wang, LS; Yeh, FL; Chen, CH |
| 國立交通大學 |
2014-12-08T15:27:45Z |
Gate oxynitride grown in N2O and annealed in no using rapid thermal processing
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Sun, SC; Chen, CH; Lou, JC; Yen, LW; Lin, CJ |
| 國立交通大學 |
2014-12-08T15:27:45Z |
Rapid thermal chemical vapor deposition of nitrogen-doped polysilicon for high-performance and high-reliability CMOS technology
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Sun, SC; Wang, LS; Yeh, FL |
| 國立交通大學 |
2014-12-08T15:27:44Z |
MOS characteristics of N2O-grown and NO-annealed oxynitrides
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Sun, SC; Chen, CH; Lou, JC |
| 國立交通大學 |
2014-12-08T15:27:44Z |
Properties of metalorganic chemical vapor deposited tantalum nitride thin films
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Sun, SC; Tsai, MH; Tsai, CE; Chiu, HT |
| 國立交通大學 |
2014-12-08T15:27:43Z |
A comparative study of CVD TiN and CVD TaN diffusion barriers for copper interconnection
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Sun, SC; Tsai, MH; Chiu, HT; Chuang, SH; Tsai, CE |
| 國立交通大學 |
2014-12-08T15:27:43Z |
Characterization and optimization of NO-nitrided gate oxide by RTP
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Sun, SC; Chen, CH; Yen, DLW; Lin, CJ |
| 國立交通大學 |
2014-12-08T15:27:23Z |
Evaluation of PTFE nanoemulsion as a low dielectric constant material ILD
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Sun, SC; Chiang, YC; Rosenmayer, CT; Teguh, J; Wu, H |
| 國立交通大學 |
2014-12-08T15:04:20Z |
CHARACTERIZATIONS OF OXIDE GROWN BY N2O
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CHAO, TS; CHEN, WH; SUN, SC; CHANG, HY |
| 國立交通大學 |
2014-12-08T15:03:39Z |
COMPARISON OF CHEMICAL-VAPOR-DEPOSITION OF TIN USING TETRAKIS-DIETHYLAMINO-TITANIUM AND TETRAKIS-DIMETHYLAMINO-TITANIUM
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SUN, SC; TSAI, MH |
| 國立交通大學 |
2014-12-08T15:03:13Z |
METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF TANTALUM NITRIDE BY TERTBUTYLIMIDOTRIS(DIETHYLAMIDO)TANTALUM FOR ADVANCED METALLIZATION
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TSAI, MH; SUN, SC; CHIU, HT; TSAI, CE; CHUANG, SH |
| 國立交通大學 |
2014-12-08T15:03:02Z |
Metal-organic chemical vapor deposition of tantalum nitride barrier layers for ULSI applications
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Tsai, MH; Sun, SC; Lee, CP; Chiu, HT; Tsai, CE; Chuang, SH; Wu, SC |
| 國立交通大學 |
2014-12-08T15:02:53Z |
Effect of rapid thermal annealing on the electrical and physical properties of metalorganic chemical-vapor-deposited TiN
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Sun, SC; Tsai, MH |
| 國立交通大學 |
2014-12-08T15:02:46Z |
Metalorganic chemical vapor deposition of tungsten nitride for advanced metallization
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Tsai, MH; Sun, SC; Chiu, HT; Chuang, SH |
| 國立交通大學 |
2014-12-08T15:02:39Z |
Comparison of the diffusion barrier properties of chemical-vapor-deposited TaN and sputtered TaN between Cu and Si
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Tsai, MH; Sun, SC; Tsai, CE; Chuang, SH; Chiu, HT |
| 國立交通大學 |
2014-12-08T15:02:33Z |
Leakage current reduction in chemical-vapor-deposited Ta2O5 films by rapid thermal annealing in N2O
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Sun, SC; Chen, TF |
| 國立交通大學 |
2014-12-08T15:01:56Z |
Effects of electrode materials and annealing ambients on the electrical properties of TiO2 thin films by metalorganic chemical vapor deposition
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Sun, SC; Chen, TF |
| 國立交通大學 |
2014-12-08T15:01:43Z |
Reduction of leakage current in chemical-vapor-deposited Ta2O5 thin films by furnace N2O annealing
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Sun, SC; Chen, TF |
| 國立交通大學 |
2014-12-08T15:01:24Z |
Effect of oxygen to argon ratio on properties of (Ba,Sr)TiO3 thin films prepared by radio-frequency magnetron sputtering
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Tsai, MS; Sun, SC; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:01:10Z |
Electrical properties of O-2 and N-2 annealed (Ba,Sr)TiO3 thin films
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Tsai, MS; Sun, SC; Tseng, TY |
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