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Showing items 16-34 of 34 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:27:45Z |
Gate oxynitride grown in N2O and annealed in no using rapid thermal processing
|
Sun, SC; Chen, CH; Lou, JC; Yen, LW; Lin, CJ |
| 國立交通大學 |
2014-12-08T15:27:45Z |
Rapid thermal chemical vapor deposition of nitrogen-doped polysilicon for high-performance and high-reliability CMOS technology
|
Sun, SC; Wang, LS; Yeh, FL |
| 國立交通大學 |
2014-12-08T15:27:44Z |
MOS characteristics of N2O-grown and NO-annealed oxynitrides
|
Sun, SC; Chen, CH; Lou, JC |
| 國立交通大學 |
2014-12-08T15:27:44Z |
Properties of metalorganic chemical vapor deposited tantalum nitride thin films
|
Sun, SC; Tsai, MH; Tsai, CE; Chiu, HT |
| 國立交通大學 |
2014-12-08T15:27:43Z |
A comparative study of CVD TiN and CVD TaN diffusion barriers for copper interconnection
|
Sun, SC; Tsai, MH; Chiu, HT; Chuang, SH; Tsai, CE |
| 國立交通大學 |
2014-12-08T15:27:43Z |
Characterization and optimization of NO-nitrided gate oxide by RTP
|
Sun, SC; Chen, CH; Yen, DLW; Lin, CJ |
| 國立交通大學 |
2014-12-08T15:27:23Z |
Evaluation of PTFE nanoemulsion as a low dielectric constant material ILD
|
Sun, SC; Chiang, YC; Rosenmayer, CT; Teguh, J; Wu, H |
| 國立交通大學 |
2014-12-08T15:04:20Z |
CHARACTERIZATIONS OF OXIDE GROWN BY N2O
|
CHAO, TS; CHEN, WH; SUN, SC; CHANG, HY |
| 國立交通大學 |
2014-12-08T15:03:39Z |
COMPARISON OF CHEMICAL-VAPOR-DEPOSITION OF TIN USING TETRAKIS-DIETHYLAMINO-TITANIUM AND TETRAKIS-DIMETHYLAMINO-TITANIUM
|
SUN, SC; TSAI, MH |
| 國立交通大學 |
2014-12-08T15:03:13Z |
METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF TANTALUM NITRIDE BY TERTBUTYLIMIDOTRIS(DIETHYLAMIDO)TANTALUM FOR ADVANCED METALLIZATION
|
TSAI, MH; SUN, SC; CHIU, HT; TSAI, CE; CHUANG, SH |
| 國立交通大學 |
2014-12-08T15:03:02Z |
Metal-organic chemical vapor deposition of tantalum nitride barrier layers for ULSI applications
|
Tsai, MH; Sun, SC; Lee, CP; Chiu, HT; Tsai, CE; Chuang, SH; Wu, SC |
| 國立交通大學 |
2014-12-08T15:02:53Z |
Effect of rapid thermal annealing on the electrical and physical properties of metalorganic chemical-vapor-deposited TiN
|
Sun, SC; Tsai, MH |
| 國立交通大學 |
2014-12-08T15:02:46Z |
Metalorganic chemical vapor deposition of tungsten nitride for advanced metallization
|
Tsai, MH; Sun, SC; Chiu, HT; Chuang, SH |
| 國立交通大學 |
2014-12-08T15:02:39Z |
Comparison of the diffusion barrier properties of chemical-vapor-deposited TaN and sputtered TaN between Cu and Si
|
Tsai, MH; Sun, SC; Tsai, CE; Chuang, SH; Chiu, HT |
| 國立交通大學 |
2014-12-08T15:02:33Z |
Leakage current reduction in chemical-vapor-deposited Ta2O5 films by rapid thermal annealing in N2O
|
Sun, SC; Chen, TF |
| 國立交通大學 |
2014-12-08T15:01:56Z |
Effects of electrode materials and annealing ambients on the electrical properties of TiO2 thin films by metalorganic chemical vapor deposition
|
Sun, SC; Chen, TF |
| 國立交通大學 |
2014-12-08T15:01:43Z |
Reduction of leakage current in chemical-vapor-deposited Ta2O5 thin films by furnace N2O annealing
|
Sun, SC; Chen, TF |
| 國立交通大學 |
2014-12-08T15:01:24Z |
Effect of oxygen to argon ratio on properties of (Ba,Sr)TiO3 thin films prepared by radio-frequency magnetron sputtering
|
Tsai, MS; Sun, SC; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:01:10Z |
Electrical properties of O-2 and N-2 annealed (Ba,Sr)TiO3 thin films
|
Tsai, MS; Sun, SC; Tseng, TY |
Showing items 16-34 of 34 (1 Page(s) Totally)
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