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Showing items 26-34 of 34 (4 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:03:02Z |
Metal-organic chemical vapor deposition of tantalum nitride barrier layers for ULSI applications
|
Tsai, MH; Sun, SC; Lee, CP; Chiu, HT; Tsai, CE; Chuang, SH; Wu, SC |
| 國立交通大學 |
2014-12-08T15:02:53Z |
Effect of rapid thermal annealing on the electrical and physical properties of metalorganic chemical-vapor-deposited TiN
|
Sun, SC; Tsai, MH |
| 國立交通大學 |
2014-12-08T15:02:46Z |
Metalorganic chemical vapor deposition of tungsten nitride for advanced metallization
|
Tsai, MH; Sun, SC; Chiu, HT; Chuang, SH |
| 國立交通大學 |
2014-12-08T15:02:39Z |
Comparison of the diffusion barrier properties of chemical-vapor-deposited TaN and sputtered TaN between Cu and Si
|
Tsai, MH; Sun, SC; Tsai, CE; Chuang, SH; Chiu, HT |
| 國立交通大學 |
2014-12-08T15:02:33Z |
Leakage current reduction in chemical-vapor-deposited Ta2O5 films by rapid thermal annealing in N2O
|
Sun, SC; Chen, TF |
| 國立交通大學 |
2014-12-08T15:01:56Z |
Effects of electrode materials and annealing ambients on the electrical properties of TiO2 thin films by metalorganic chemical vapor deposition
|
Sun, SC; Chen, TF |
| 國立交通大學 |
2014-12-08T15:01:43Z |
Reduction of leakage current in chemical-vapor-deposited Ta2O5 thin films by furnace N2O annealing
|
Sun, SC; Chen, TF |
| 國立交通大學 |
2014-12-08T15:01:24Z |
Effect of oxygen to argon ratio on properties of (Ba,Sr)TiO3 thin films prepared by radio-frequency magnetron sputtering
|
Tsai, MS; Sun, SC; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:01:10Z |
Electrical properties of O-2 and N-2 annealed (Ba,Sr)TiO3 thin films
|
Tsai, MS; Sun, SC; Tseng, TY |
Showing items 26-34 of 34 (4 Page(s) Totally)
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