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Showing items 6-15 of 34 (4 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:58:30Z |
Leakage current reduction in chemical-vapor-deposited Ta2O5 films by rapid thermal annealing in N2O
|
Sun, SC; Chen, TF |
| 國家衛生研究院 |
2017-09 |
A mutation-resistant deoxyribozyme OR gate for highly selective detection of viral nucleic acids
|
Kamar, O;Sun, SC;Lin, CH;Chung, WY;Lee, MS;Liao, YC;Kolpashchikov, DM;Chuang, MC |
| 國立交通大學 |
2014-12-08T15:46:54Z |
Effect of bottom electrode materials and annealing treatments on the electrical characteristics of Ba0.47Sr0.53TiO3 film capacitors
|
Tsai, MS; Sun, SC; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:46:14Z |
Effect of bottom electrode materials on the electrical and reliability characteristics of (Ba, Sr)TiO3 capacitors
|
Tsai, MS; Sun, SC; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:27:57Z |
THERMAL-OXIDATION OF LIGHTLY-DOPED AND HEAVILY-DOPED SILICON IN PURE N2O
|
SUN, SC; CHANG, HY |
| 國立交通大學 |
2014-12-08T15:27:53Z |
RAPID THERMAL-OXIDATION OF LIGHTLY DOPED SILICON IN N2O
|
SUN, SC; WANG, LS; YEH, FL; LAI, TS; LIN, YH |
| 國立交通大學 |
2014-12-08T15:27:51Z |
A NOVEL APPROACH FOR LEAKAGE CURRENT REDUCTION OF LPCVD TA(2)O(5) AND TIO(2) FILMS BY RAPID THERMAL N(2)O ANNEALING
|
SUN, SC; CHEN, TF |
| 國立交通大學 |
2014-12-08T15:27:49Z |
CHARACTERIZATION OF CHEMICAL-MECHANICAL POLISHING DIELECTRICS FOR MULTILEVEL METALLIZATION
|
SUN, SC; YEH, FL; TIEN, HZ |
| 國立交通大學 |
2014-12-08T15:27:48Z |
Performance of MOCVD tantalum nitride diffusion barrier for copper metallization
|
Sun, SC; Tsai, MH; Tsai, CE; Chiu, HT |
| 國立交通大學 |
2014-12-08T15:27:48Z |
Rapid thermal chemical vapor deposition of in-situ nitrogen-doped polysilicon for dual gate CMOS
|
Sun, SC; Wang, LS; Yeh, FL; Chen, CH |
Showing items 6-15 of 34 (4 Page(s) Totally)
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