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Showing items 1-9 of 9 (1 Page(s) Totally)
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| 國立成功大學 |
2002-02 |
Effects of interfacial oxide layer for the Ta2O5 capacitor after high-temperature annealing
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Lee, Jiann-Shing; Sun, Shi-Chung; Chang, Shoou-Jinn; Chen, Jone F.; Liu, Chun-Hsing; Liaw, Heay-Liaw |
| 國立成功大學 |
2001-11 |
Influence of nitrogen doping on the barrier properties of sputtered tantalum carbide films for copper metallization
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Wang, Shui-Jinn; Tsai, Hao-Yi; Sun, Shi-Chung; Shiao, Ming-Hua |
| 國立成功大學 |
2001-09 |
Thermal stability of sputtered tungsten carbide as diffusion barrier for copper metallization
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Wang, Shui-Jinn; Tsai, Hao-Yi; Sun, Shi-Chung; Shiao, M. H. |
| 國立成功大學 |
2001-08-15 |
A comparative study of sputtered TaCx and WCx films as diffusion barriers between Cu and Si
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Wang, Shui-Jinn; Tsai, Hao-Yi; Sun, Shi-Chung |
| 國立成功大學 |
2001-08 |
Characterization of sputtered titanium carbide film as diffusion barrier for copper metallization
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Wang, Shui-Jinn; Tsai, Hao-Yi; Sun, Shi-Chung |
| 國立成功大學 |
2001-08 |
Characterization of sputtered Ta-C-N film in the Cu/barrier/Si contact system
|
Wang, Shui-Jinn; Tsai, Hao-Yi; Sun, Shi-Chung; Shiao, M. H. |
| 國立成功大學 |
2001-04 |
Characterization of tungsten carbide as diffusion barrier for Cu metallization
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Wang, Shui-Jinn; Tsai, Hao-Yi; Sun, Shi-Chung |
| 國立成功大學 |
2000-11 |
Electrical properties of thin gate dielectric grown by rapid thermal oxidation
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Lee, Jiann-Shing; Chang, Shoou-Jinn; Sun, Shi-Chung; Jang, Syun-Ming; Yu, Mo-Chiun |
| 國立成功大學 |
2000-07 |
Characterization of sputtered tantalum carbide barrier layer for copper metallization
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Tsai, Hao-Yi; Sun, Shi-Chung; Wang, Shui-Jinn |
Showing items 1-9 of 9 (1 Page(s) Totally)
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