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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Institution Date Title Author
國立交通大學 2014-12-08T15:45:38Z Shallow-trench isolation with raised-field-oxide structure Chen, CM; Chang, CY; Chou, JW; Lur, W; Sun, SW
國立交通大學 2014-12-08T15:27:17Z Novel input ESD protection circuit with substrate-triggering technique in a 0.25-mu m shallow-trench-isolation CMOS technology Ker, MD; Chen, TY; Wu, CY; Tang, H; Su, KC; Sun, SW
國立交通大學 2014-12-08T15:26:23Z Negative substrate bias enhanced breakdown hardness in ultra-thin oxide pMOSFETs Wang, TH; Tsai, CW; Chen, MC; Chan, CT; Chiang, HK; Lu, SH; Hu, HC; Chen, TF; Yang, CK; Lee, MT; Wu, DY; Chen, JK; Chien, SC; Sun, SW
國立交通大學 2014-12-08T15:25:49Z Low leakage reliability characterization methodology for advanced CMOS with gate oxide in the 1nm range Chung, SS; Feng, HJ; Hsieh, YS; Liu, A; Lin, WM; Chen, DF; Ho, JH; Huang, KT; Yang, CK; Cheng, O; Sheng, YC; Wu, DY; Shiau, WT; Chien, SC; Liao, K; Sun, SW
國立交通大學 2014-12-08T15:25:49Z Comparison of oxide breakdown progression in ultra-thin oxide SOI and bulk pMOSFETs Chan, CT; Kuo, CH; Tang, CJ; Chen, MC; Wang, TH; Lu, SH; Hu, HC; Chen, TF; Yang, CK; Lee, MT; Wu, DY; Chen, JK; Chien, SC; Sun, SW
國立交通大學 2014-12-08T15:25:27Z A new observation of the germanium outdiffusion effect on the hot carrier and NBTI reliabilities in sub-100nm technology strained-Si/SiGe CMOS devices Chung, SS; Liu, YR; Yeh, CF; Wu, SR; Lai, CS; Chang, TY; Ho, JH; Liu, CY; Huang, CT; Tsai, CT; Shiau, WT; Sun, SW
國立交通大學 2014-12-08T15:25:11Z A new insight into the degradation mechanisms of various mobility-enhanced CMOS devices with different substrate engineering Chung, SS; Liu, YR; Wu, SJ; Lai, CS; Liu, YC; Chen, DF; Lin, HS; Shiau, WT; Tsai, CT; Chien, SC; Sun, SW
國立臺灣大學 2005-01 Effects of conversion from sirolimus oral solution to tablets in stable Taiwanese renal transplant recipients. Wu, FL; Tsai, MK; Sun, SW; Chen, RR; Huang, JD; Lee, PH.
臺北醫學大學 2005 Formalin fixation alters water diffusion coefficient magnitude but not 許重義; Sun SW; Neil JJ; Liang HF; He YY; Schmidt RE; Hsu CY; Song SK.

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