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机构 日期 题名 作者
臺大學術典藏 2018-09-10T09:22:00Z The mechanism of carrier transportation in a superlattice infrared photodetector sandwiched by front and rear barriers Lin, S.-H.; Feng, D.J.; Lee, M.-L.; Lu, J.-H.; Sun, T.-P.; Lay, T.-S.; Kuan, C.-H.; CHIEH-HSIUNG KUAN
臺大學術典藏 2018-09-10T09:18:23Z Monitoring the subcellular localization of doxorubicin in CHO-K1 using MEKC-LIF: Liposomal carrier for enhanced drug delivery Ho, J.-A.A.; Fan, N.-C.; Fang-Ju Jou, A.; Wu, L.-C.; Sun, T.-P.; JA-AN ANNIE HO
臺大學術典藏 2018-09-10T06:31:13Z Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As/GaAs pseudomorphic doped-channel FET with high-current density and high-breakdown voltage Sun, T.-P.; Lin, Y.-S.; Lu, S.-S.; Lu, S.-S.
臺大學術典藏 2018-09-10T06:30:18Z Room temperature unpassivated inas P-I-N photodetectors grown by molecular beam epitaxy Lin, R.-M.; Tang, S.-F.; Lee, S.-C.; Kuan, C.-H.; Chen, G.-S.; Sun, T.-P.; Wu, J.-C.; CHIEH-HSIUNG KUAN; SI-CHEN LEE
臺大學術典藏 2018-09-10T05:57:55Z Analysis of the dark current in the bulk of InAs diode detectors Kuan, C.H.; Lin, R.-M.; Tang, S.-F.; Sun, T.-P.; CHIEH-HSIUNG KUAN
臺大學術典藏 2018-09-10T05:23:37Z High-breakdown-voltage Ga0.51In0.49P/GaAs I-HEMT and I2HEMT with a GaInP passivation layer grown by gas source molecular beam epitaxy Sun, T.P.; Huang, C.L.; Lu, S.S.; Lu, S.S.
國立成功大學 1999-04 Dark currents in HgCdTe photodiodes passivated with ZnS/Cds Juang, F. S.; Su, Yan-Kuin; Chang, Shoou-Jinn; Chang, S. M.; Shu, F. S.; Chiang, Cheng-Der; Cherng, Y. T.; Sun, T. P.
國立臺灣大學 1995 High-breakdown-voltage Ga0.51In0.49P/GaAs I-HEMT and I2HEMT with a GaInP passivation layer grown by gas source molecular beam epitaxy Lu, S. S.; Huang, C. L.; Sun, T. P.
國立臺灣大學 1995 High-linearity high-current-drivability Ga0.51In0.49P/GaAs MISFET using Ga0.51In0.49P airbridge gate structure grown by GSMBE Lin, Y.S.; Lu, S.S.; Sun, T.P.
國立臺灣大學 1994 Vitamin K3 Induces Cell Death Via Apoptosis in Human Cervical Carcinoma TSGH8302 Cells 陳映雪; Sun, T. P.; Chang, W. T.; Wu, Felicia Y. H.; Sun, T. P.; Chang, W. T.

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