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Showing items 1-3 of 3 (1 Page(s) Totally)
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| 國立交通大學 |
2018-08-21T05:54:02Z |
Physical and electrical properties of flash memory devices with nickel oxide(NiO2) charge trapping layer
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Lee, Ming Ling; Chen, Hsiang; Kao, Chyuan Haur; Mahanty, Rama Krushna; Sung, Wei Kung; Lin, Chun Fu; Lin, Chan Yu; Chang, Kow Ming |
| 國立交通大學 |
2017-04-21T06:49:28Z |
The CeO2 Sensing Membrane in Electrolyte-Insulator-Semiconductor for Bio-Sensor Applications
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Liu, Che Chun; Lee, Ming Ling; Chang, Kow Ming; Chang, Shan Wei; Chen, Hsiang; Kao, Chyuan Haur; Sung, Wei Kung; Kuo, Min Hau; Chang, Che Wei; Chang, Chia Lun; Lin, Chun Fu |
| 國立交通大學 |
2017-04-21T06:49:28Z |
The Nitrogen Incorporated ZrO2 Charge Trapping Layers in Nonvolatile Memory Applications
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Lin, Chih Ju; Lee, Ming Ling; Chang, Kow Ming; Chang, Shan Wei; Chen, Hsiang; Kao, Chyuan Haur; Sung, Wei Kung; Kuo, Min Hau; Chang, Che Wei; Chang, Chia Lun; Lin, Chun Fu |
Showing items 1-3 of 3 (1 Page(s) Totally)
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