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Showing items 1-6 of 6 (1 Page(s) Totally)
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| 國立交通大學 |
2020-10-05T02:01:10Z |
Statistical Prediction of Nanosized-Metal-Grain-Induced Threshold-Voltage Variability for 3D Vertically Stacked Silicon Gate-All-Around Nanowiren-MOSFETs
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Sung, Wen-Li; Li, Yiming |
| 國立交通大學 |
2020-10-05T02:01:05Z |
Effects of random number and location of the nanosized metal grains on the threshold voltage variability of silicon gate-all-around nanowiren-type metal-oxide-semiconductor field-effect transistors
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Sung, Wen-Li; Li, Yiming |
| 國立交通大學 |
2018-08-21T05:57:08Z |
Timing and Power Fluctuations on Gate-All-Around Nanowire CMOS Circuit Induced by Various Sources of Random Discrete Dopants
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Sung, Wen-Li; Chao, Pei-Jung; Li, Yiming |
| 國立交通大學 |
2018-08-21T05:56:25Z |
Asymmetric Characteristic Fluctuation of Undoped Gate-All-Around Nanowire MOSFETs Induced by Random Discrete Dopants inside Source/Drain Extensions
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Sung, Wen-Li; Li, Yiming |
| 國立交通大學 |
2018-08-21T05:53:40Z |
DC/AC/RF Characteristic Fluctuations Induced by Various Random Discrete Dopants of Gate-All-Around Silicon Nanowire n-MOSFETs
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Sung, Wen-Li; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:48:52Z |
Statistical Device Simulation of Characteristic Fluctuation of 10-nm Gate-All-Around Silicon Nanowire MOSFETs Induced by Various Discrete Random Dopants
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Sung, Wen-Li; Chang, Han-Tung; Chen, Chieh-Yang; Chao, Pei-Jung; Li, Yiming |
Showing items 1-6 of 6 (1 Page(s) Totally)
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