|
English
|
正體中文
|
简体中文
|
總筆數 :2851792
|
|
造訪人次 :
44712429
線上人數 :
1191
教育部委託研究計畫 計畫執行:國立臺灣大學圖書館
|
|
|
"sung wen li"的相關文件
顯示項目 1-6 / 6 (共1頁)
1
每頁顯示[10|25|50]項目
| 國立交通大學 |
2020-10-05T02:01:10Z |
Statistical Prediction of Nanosized-Metal-Grain-Induced Threshold-Voltage Variability for 3D Vertically Stacked Silicon Gate-All-Around Nanowiren-MOSFETs
|
Sung, Wen-Li; Li, Yiming |
| 國立交通大學 |
2020-10-05T02:01:05Z |
Effects of random number and location of the nanosized metal grains on the threshold voltage variability of silicon gate-all-around nanowiren-type metal-oxide-semiconductor field-effect transistors
|
Sung, Wen-Li; Li, Yiming |
| 國立交通大學 |
2018-08-21T05:57:08Z |
Timing and Power Fluctuations on Gate-All-Around Nanowire CMOS Circuit Induced by Various Sources of Random Discrete Dopants
|
Sung, Wen-Li; Chao, Pei-Jung; Li, Yiming |
| 國立交通大學 |
2018-08-21T05:56:25Z |
Asymmetric Characteristic Fluctuation of Undoped Gate-All-Around Nanowire MOSFETs Induced by Random Discrete Dopants inside Source/Drain Extensions
|
Sung, Wen-Li; Li, Yiming |
| 國立交通大學 |
2018-08-21T05:53:40Z |
DC/AC/RF Characteristic Fluctuations Induced by Various Random Discrete Dopants of Gate-All-Around Silicon Nanowire n-MOSFETs
|
Sung, Wen-Li; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:48:52Z |
Statistical Device Simulation of Characteristic Fluctuation of 10-nm Gate-All-Around Silicon Nanowire MOSFETs Induced by Various Discrete Random Dopants
|
Sung, Wen-Li; Chang, Han-Tung; Chen, Chieh-Yang; Chao, Pei-Jung; Li, Yiming |
顯示項目 1-6 / 6 (共1頁)
1
每頁顯示[10|25|50]項目
|
