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Showing items 1-8 of 8 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:47:04Z |
Majority- and minority-carrier traps in Te-doped AlInP
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Wu, YR; Sung, WJ; Lee, WI |
| 國立交通大學 |
2014-12-08T15:46:27Z |
Mg-related deep levels in AlInP
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Wu, YR; Sung, WJ; Lee, SC; Li, TJ; Lee, WI |
| 國立交通大學 |
2014-12-08T15:46:21Z |
A dopant-related defect in Te-doped AlInP
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Wu, YR; Sung, WJ; Wen, TC; Lee, SC; Lee, WI |
| 國立交通大學 |
2014-12-08T15:45:12Z |
Phosphorus vacancy as a deep level in AlInP layers
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Sung, WJ; Wu, YR; Lee, SC; Wen, TC; Li, TJ; Chang, JT; Lee, WI |
| 國立交通大學 |
2014-12-08T15:43:36Z |
Thermal-treatment induced deep electron traps in AlInP
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Sung, WJ; Huang, KF; Lin, WJ; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:43:30Z |
Gamma-ray induced deep electron traps in GaInP
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Sung, WJ; Liu, TY; Yang, SL; Huang, KF; Tseng, TY; Chou, FI; Wei, YY; Wu, YR |
| 國立交通大學 |
2014-12-08T15:43:11Z |
Deep hole traps created by gamma-ray irradiation of GaInP
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Sung, WJ; Liu, TY; Yang, SL; Huang, KF; Tseng, TY; Chou, FI; Wei, YY |
| 國立交通大學 |
2014-12-08T15:42:22Z |
Deep electron trapping centers in Te-doped (AlxGa1-x)(0.5)In0.5P (x=0.5) layers grown by metal-organic chemical vapor deposition
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Sung, WJ; Huang, KF; Tseng, TY |
Showing items 1-8 of 8 (1 Page(s) Totally)
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