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Showing items 1-8 of 8  (1 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:47:04Z Majority- and minority-carrier traps in Te-doped AlInP Wu, YR; Sung, WJ; Lee, WI
國立交通大學 2014-12-08T15:46:27Z Mg-related deep levels in AlInP Wu, YR; Sung, WJ; Lee, SC; Li, TJ; Lee, WI
國立交通大學 2014-12-08T15:46:21Z A dopant-related defect in Te-doped AlInP Wu, YR; Sung, WJ; Wen, TC; Lee, SC; Lee, WI
國立交通大學 2014-12-08T15:45:12Z Phosphorus vacancy as a deep level in AlInP layers Sung, WJ; Wu, YR; Lee, SC; Wen, TC; Li, TJ; Chang, JT; Lee, WI
國立交通大學 2014-12-08T15:43:36Z Thermal-treatment induced deep electron traps in AlInP Sung, WJ; Huang, KF; Lin, WJ; Tseng, TY
國立交通大學 2014-12-08T15:43:30Z Gamma-ray induced deep electron traps in GaInP Sung, WJ; Liu, TY; Yang, SL; Huang, KF; Tseng, TY; Chou, FI; Wei, YY; Wu, YR
國立交通大學 2014-12-08T15:43:11Z Deep hole traps created by gamma-ray irradiation of GaInP Sung, WJ; Liu, TY; Yang, SL; Huang, KF; Tseng, TY; Chou, FI; Wei, YY
國立交通大學 2014-12-08T15:42:22Z Deep electron trapping centers in Te-doped (AlxGa1-x)(0.5)In0.5P (x=0.5) layers grown by metal-organic chemical vapor deposition Sung, WJ; Huang, KF; Tseng, TY

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