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| 國立交通大學 |
2019-12-13T01:10:03Z |
The influence of 2D MoS2 layers on the growth of GaN films by plasma-assisted molecular beam epitaxy
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Susanto, Iwan; Tsai, Chi-Yu; Fachruddin; Rahmiati, Tia; Ho, Yen-Ten; Tsai, Ping-Yu; Yu, Ing-Song |
| 國立交通大學 |
2018-08-21T05:54:02Z |
Effects of N/Ga flux ratio on GaN films grown on 4H-SiC substrate with 4 degrees miscutting orientation by plasma-assisted molecular beam epitaxy
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Susanto, Iwan; Tsou, Tsung-Han; Yang, Zu-Po; Lee, Chao-Yu; Li, Hui; Yu, Ing-Song |
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