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机构 日期 题名 作者
國立交通大學 2014-12-08T15:31:36Z Study of Resistive Switching Characteristics on a Temperature-Sensitive FeOx-Transition Layer in a TiN/SiO2/FeOx/Fe Structure Chang, Yao-Feng; Tsai, Yu-Ting; Chang, Geng-Wei; Syu, Yong-En; Tai, Ya-Hsiang; Chang, Ting-Chang
國立交通大學 2014-12-08T15:22:41Z Suppress temperature instability of InGaZnO thin film transistors by N2O plasma treatment, including thermal-induced hole trapping phenomenon under gate bias stress Chang, Geng-Wei; Chang, Ting-Chang; Jhu, Jhe-Ciou; Tsai, Tsung-Ming; Syu, Yong-En; Chang, Kuan-Chang; Tai, Ya-Hsiang; Jian, Fu-Yen; Hung, Ya-Chi
國立交通大學 2014-12-08T15:36:19Z Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors Chang, Geng-Wei; Chang, Ting-Chang; Jhu, Jhe-Ciou; Tsai, Tsung-Ming; Chang, Kuan-Chang; Syu, Yong-En; Tai, Ya-Hsiang; Jian, Fu-Yen; Hung, Ya-Chi
國立成功大學 2014-06 Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors Chang, Geng-Wei; Chang, Ting-Chang; Jhu, Jhe-Ciou; Tsai, Tsung-Ming; Chang, Kuan-Chang; Syu, Yong-En; Tai, Ya-Hsiang; Jian, Fu-Yen; Hung, Ya-Chi
國立交通大學 2014-12-08T15:06:55Z Temperature-dependent memory characteristics of silicon-oxide-nitride-oxide-silicon thin-film-transistors Chen, Shih-Ching; Chang, Ting-Chang; Wu, Yung-Chun; Chin, Jing-Yi; Syu, Yong-En; Sze, S. M.; Chang, Chun-Yen; Wu, Hsing-Hua; Chen, Yi-Chan
國立交通大學 2014-12-08T15:31:32Z The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory Huang, Jen-Wei; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, J. C.; Young, Tai-Fa; Chen, Jung-Hui; Chen, Hsin-Lu; Pan, Yin-Chih; Huang, Xuan; Zhang, Fengyan; Syu, Yong-En; Sze, Simon M.
國立成功大學 2013-05-20 The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory Huang, Jen-Wei; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, J. C.; Young, Tai-Fa; Chen, Jung-Hui; Chen, Hsin-Lu; Pan, Yin-Chih; Huang, Xuan; Zhang, Fengyan; Syu, Yong-En; Sze, Simon M.
國立交通大學 2014-12-08T15:21:32Z The Effect of Silicon Oxide Based RRAM with Tin Doping Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M.
國立交通大學 2014-12-08T15:30:31Z The Effect of Silicon Oxide Based RRAM with Tin Doping (vol 15, pg H65, 2012) Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Liao, Kuo-Hsiao; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M.
國立交通大學 2014-12-08T15:35:05Z Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory Chu, Tian-Jian; Tsai, Tsung-Ming; Chang, Ting-Chang; Chang, Kuan-Chang; Zhang, Rui; Chen, Kai-Huang; Chen, Jung-Hui; Young, Tai-Fa; Huang, Jen-Wei; Lou, Jen-Chung; Chen, Min-Chen; Huang, Syuan-Yong; Chen, Hsin-Lu; Syu, Yong-En; Bao, Dinghua; Sze, Simon M.
國立成功大學 2014-02 Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory Chu, Tian-Jian; Tsai, Tsung-Ming; Chang, Ting-Chang; Chang, Kuan-Chang; Zhang, Rui; Chen, Kai-Huang; Chen, Jung-Hui; Young, Tai-Fa; Huang, Jen-Wei; Lou, Jen-Chung; Chen, Min-Chen; Huang, Syuan-Yong; Chen, Hsin-Lu; Syu, Yong-En; Bao, Dinghua; Sze, Simon M.

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