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Showing items 1-25 of 86 (4 Page(s) Totally)
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| 國立交通大學 |
2019-04-03T06:44:32Z |
Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment
|
Chen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liang, Shu-Ping; Young, Tai-Fa; Syu, Yong-En; Sze, Simon M. |
| 國立交通大學 |
2019-04-03T06:42:27Z |
Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode
|
Chen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liang, Shu-Ping; Young, Tai-Fa; Syu, Yong-En; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:59:51Z |
Redox Reaction Switching Mechanism in RRAM Device With Pt/CoSiOX/TiN Structure
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Syu, Yong-En; Chang, Ting-Chang; Tsai, Tsung-Ming; Hung, Ya-Chi; Chang, Kuan-Chang; Tsai, Ming-Jinn; Kao, Ming-Jer; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:59:04Z |
Investigation for coexistence of dual resistive switching characteristics in DyMn2O5 memory devices
|
Tsai, Yu-Ting; Chang, Ting-Chang; Huang, Wei-Li; Huang, Chih-Wen; Syu, Yong-En; Chen, Shih-Cheng; Sze, Simon M.; Tsai, Ming-Jinn; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:59:03Z |
Improving Resistance Switching Characteristics with SiGeOx/SiGeON Double Layer for Nonvolatile Memory Applications
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Syu, Yong-En; Chang, Ting-Chang; Tsai, Chih-Tsung; Chang, Geng-Wei; Tsai, Tsung-Ming; Chang, Kuan-Chang; Tai, Ya-Hsiang; Tsai, Ming-Jinn; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:57:55Z |
Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment
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Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Wang, Chia-C.; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:57:52Z |
Silicon introduced effect on resistive switching characteristics of WOX thin films
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Syu, Yong-En; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Geng-Wei; Chang, Kuan-Chang; Tai, Ya-Hsiang; Tsai, Ming-Jinn; Wang, Ying-Lang; Sze, Simon M. |
| 國立交通大學 |
2017-04-21T06:55:49Z |
Effect of different constant compliance current for hopping conduction distance properties of the Sn:SiOx thin film RRAM devices
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Chen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liao, Kuo-Hsiao; Syu, Yong-En; Sze, Simon M. |
| 國立交通大學 |
2017-04-21T06:49:56Z |
N2O Plasma Treatment Suppressed Temperature-dependent Point Defects Formation with Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors
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Jhu, Jhe-Ciou; Chang, Ting-Chang; Chang, Geng-Wei; Syu, Yong-En; Tsai, Tsung-Ming; Jian, Fu-Yen; Chang, Kuan-Chang; Tai, Ya-Hsiang |
| 國立成功大學 |
2016-04-27 |
Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode
|
Chen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liang, Shu-Ping; Young, Tai-Fa; Syu, Yong-En; Sze, Simon M. |
| 國立成功大學 |
2016-03 |
Effect of different constant compliance current for hopping conduction distance properties of the Sn:SiOx thin film RRAM devices
|
Chen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liao, Kuo-Hsiao; Syu, Yong-En; Sze, Simon M. |
| 國立成功大學 |
2016-02-01 |
Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment
|
Chen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liang, Shu-Ping; Young, Tai-Fa; Syu, Yong-En; Sze, Simon M. |
| 國立成功大學 |
2016 |
Communication-Effects of Oxygen Concentration Gradient on Resistive Switching Behavior in Oxygen Vacancy-Rich Electrodes
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Pan, Chih-Hung; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Liang, Shu-Ping; Lin, Chih-Yang; Chen, Min-Chen; Chen, Po-Hsun; Syu, Yong-En; Huang, Hui-Chun; Sze, Simon M. |
| 國立交通大學 |
2015-12-02T02:59:35Z |
Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment
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Chen, Ji; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Zhang, Rui; Lou, Jen-Chung; Chu, Tian-Jian; Wu, Cheng-Hsien; Chen, Min-Chen; Hung, Ya-Chi; Syu, Yong-En; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立交通大學 |
2015-12-02T02:59:33Z |
A Method to Determine the Located Region of Lateral Trap Position by Analysis of Three-Level Random Telegraph Signals in n-MOSFETs
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Chen, Ching-En; Chang, Ting-Chang; You, Bo; Tsai, Jyun-Yu; Lo, Wen-Hung; Ho, Szu-Han; Liu, Kuan-Ju; Lu, Ying-Hsin; Hung, Yu-Ju; Tseng, Tseung-Yuen; Wu, James; Tsai, Wei-Kung; Chenge, Kuo-Yu; Syu, Yong-En |
| 國立成功大學 |
2015-11 |
Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment
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Chen, Ji; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Zhang, Rui; Lou, Jen-Chung; Chu, Tian-Jian; Wu, Cheng-Hsien; Chen, Min-Chen; Hung, Ya-Chi; Syu, Yong-En; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立交通大學 |
2015-07-21T08:31:00Z |
Effect of Electrode Material on Resistive Switching Characteristics in TaON Nonvolatile Memory Devices
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Chen, Min-Chen; Chang, Ting-Chang; Chiu, Yi-Chieh; Chen, Shih-Cheng; Huang, Sheng-Yao; Syu, Yong-En; Chang, Kuan-Chang; Huang, Hui-Chun; Tsai, Tsung-Ming; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2015-07-21T08:29:45Z |
Hopping conduction properties of the Sn:SiO (X) thin-film resistance random access memory devices induced by rapid temperature annealing procedure
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Chen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liao, Kuo-Hsiao; Syu, Yong-En; Sze, Simon M. |
| 國立交通大學 |
2015-07-21T08:28:10Z |
Mechanism of Triple Ions Effect in GeSO Resistance Random Access Memory
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Zhang, Wei; Hu, Ying; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chen, Hsin-Lu; Su, Yu-Ting; Zhang, Rui; Hung, Ya-Chi; Syu, Yong-En; Chen, Min-Chen; Zheng, Jin-Cheng; Lin, Hua-Ching; Sze, Simon M. |
| 國立交通大學 |
2015-07-21T08:28:09Z |
Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory
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Lin, Chih-Yang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Zhang, Rui; Liu, Kuan-Hsien; Chen, Hua-Mao; Tseng, Yi-Ting; Hung, Ya-Chi; Syu, Yong-En; Zheng, Jin-Cheng; Wang, Ying-Lang; Zhang, Wei; Sze, Simon M. |
| 國立成功大學 |
2015-06-01 |
Hopping conduction properties of the Sn:SiO (X) thin-film resistance random access memory devices induced by rapid temperature annealing procedure
|
Chen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liao, Kuo-Hsiao; Syu, Yong-En; Sze, Simon M. |
| 國立成功大學 |
2015-06 |
Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory
|
Lin, Chih-Yang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Zhang, Rui; Liu, Kuan-Hsien; Chen, Hua-Mao; Tseng, Yi-Ting; Hung, Ya-Chi; Syu, Yong-En; Zheng, Jin-Cheng; Wang, Ying-Lang; Zhang, Wei; Sze, Simon M. |
| 國立成功大學 |
2015-06 |
Mechanism of Triple Ions Effect in GeSO Resistance Random Access Memory
|
Zhang, Wei; Hu, Ying; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chen, Hsin-Lu; Su, Yu-Ting; Zhang, Rui; Hung, Ya-Chi; Syu, Yong-En; Chen, Min-Chen; Zheng, Jin-Cheng; Lin, Hua-Ching; Sze, Simon M. |
| 國立成功大學 |
2015-05-25 |
Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory
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Tseng, Yi-Ting; Tsai, Tsung-Ming; Chang, Ting-Chang; Shih, Chih-Cheng; Chang, Kuan-Chang; Zhang, Rui; Chen, Kai-Huang; Chen, Jung-Hui; Li, Yu-Chiuan; Lin, Chih-Yang; Hung, Ya-Chi; Syu, Yong-En; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立成功大學 |
2015 |
A Method to Determine the Located Region of Lateral Trap Position by Analysis of Three-Level Random Telegraph Signals in n-MOSFETs
|
Chen, Ching-En; Chang, Ting-Chang; You, Bo; Tsai, Jyun-Yu; Lo, Wen-Hung; Ho, Szu-Han; Liu, Kuan-Ju; Lu, Ying-Hsin; Hung, Yu-Ju; Tseng, Tseung-Yuen; Wu, James; Tsai, Wei-Kung; Chenge, Kuo-Yu; Syu, Yong-En |
Showing items 1-25 of 86 (4 Page(s) Totally)
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