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機構 日期 題名 作者
國立交通大學 2014-12-08T15:31:21Z Performance and characteristics of double layer porous silicon oxide resistance random access memory Tsai, Tsung-Ming; Chang, Kuan-Chang; Zhang, Rui; Chang, Ting-Chang; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Tseng, Bae-Heng; Shih, Chih-Cheng; Pan, Yin-Chih; Chen, Min-Chen; Pan, Jhih-Hong; Syu, Yong-En; Sze, Simon M.
國立交通大學 2014-12-08T15:30:43Z Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices Chen, Kai-Huang; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, J. C.; Young, Tai-Fa; Chen, Jung-Hui; Shih, Chih-Cheng; Tung, Cheng-Wei; Syu, Yong-En; Sze, Simon M.
國立交通大學 2014-12-08T15:30:42Z Atomic-level quantized reaction of HfOx memristor Syu, Yong-En; Chang, Ting-Chang; Lou, Jyun-Hao; Tsai, Tsung-Ming; Chang, Kuan-Chang; Tsai, Ming-Jinn; Wang, Ying-Lang; Liu, Ming; Sze, Simon M.
國立交通大學 2014-12-08T15:30:41Z Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment Chang, Kuan-Chang; Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Shih, Chih-Cheng; Chu, Tian-Jian; Chen, Jian-Yu; Su, Yu-Ting; Jiang, Jhao-Ping; Chen, Kai-Huang; Huang, Hui-Chun; Syu, Yong-En; Gan, Der-Shin; Sze, Simon M.
國立交通大學 2014-12-08T15:30:41Z Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices Chang, Kuan-Chang; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Chen, Min-Chen; Yang, Ya-Liang; Pan, Yin-Chih; Chang, Geng-Wei; Chu, Tian-Jian; Shih, Chih-Cheng; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Syu, Yong-En; Tai, Ya-Hsiang; Sze, Simon M.
國立交通大學 2014-12-08T15:30:31Z The Effect of Silicon Oxide Based RRAM with Tin Doping (vol 15, pg H65, 2012) Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Liao, Kuo-Hsiao; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M.
國立交通大學 2014-12-08T15:30:22Z Charge Quantity Influence on Resistance Switching Characteristic During Forming Process Chu, Tian-Jian; Chang, Ting-Chang; Tsai, Tsung-Ming; Wu, Hsing-Hua; Chen, Jung-Hui; Chang, Kuan-Chang; Young, Tai-Fa; Chen, Kai-Hsang; Syu, Yong-En; Chang, Geng-Wei; Chang, Yao-Feng; Chen, Min-Chen; Lou, Jyun-Hao; Pan, Jhih-Hong; Chen, Jian-Yu; Tai, Ya-Hsiang; Ye, Cong; Wang, Hao; Sze, Simon M.
國立交通大學 2014-12-08T15:30:22Z Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Wu, Hsing-Hua; Chen, Kai-Huang; Chen, Jung-Hui; Young, Tai-Fa; Chu, Tian-Jian; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Syu, Yong-En; Tung, Cheng-Wei; Chang, Geng-Wei; Chen, Min-Chen; Huang, Hui-Chun; Tai, Ya-Hsiang; Gan, Der-Shin; Wu, Jia-Jie; Hu, Ying; Sze, Simon M.
國立交通大學 2014-12-08T15:29:51Z Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Wu, Hsing-Hua; Chen, Jung-Hui; Syu, Yong-En; Chang, Geng-Wei; Chu, Tian-Jian; Liu, Guan-Ru; Su, Yu-Ting; Chen, Min-Chen; Pan, Jhih-Hong; Chen, Jian-Yu; Tung, Cheng-Wei; Huang, Hui-Chun; Tai, Ya-Hsiang; Gan, Der-Shin; Sze, Simon M.
國立交通大學 2014-12-08T15:28:51Z On-Current Decrease After Erasing Operation in the Nonvolatile Memory Device With LDD Structure Chang, Geng-Wei; Chang, Ting-Chang; Syu, Yong-En; Tai, Ya-Hsiang; Jian, Fu-Yen
國立交通大學 2014-12-08T15:28:27Z Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical CO2 Fluid Treatment Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Chang, Geng-Wei; Syu, Yong-En; Su, Yu-Ting; Liu, Guan-Ru; Liao, Kuo-Hsiao; Chen, Min-Chen; Huang, Hui-Chun; Tai, Ya-Hsiang; Gan, Der-Shin; Ye, Cong; Wang, Hao; Sze, Simon M.
國立交通大學 2014-12-08T15:28:27Z Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Syu, Yong-En; Chuang, Siang-Lan; Chang, Geng-Wei; Liu, Guan-Ru; Chen, Min-Chen; Huang, Hui-Chun; Liu, Shih-Kun; Tai, Ya-Hsiang; Gan, Der-Shin; Yang, Ya-Liang; Young, Tai-Fa; Tseng, Bae-Heng; Chen, Kai-Huang; Tsai, Ming-Jinn; Ye, Cong; Wang, Hao; Sze, Simon M.
國立交通大學 2014-12-08T15:28:19Z Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Syu, Yong-En; Liao, Kuo-Hsiao; Tseng, Bae-Heng; Sze, Simon M.
國立交通大學 2014-12-08T15:27:50Z Investigation for coexistence of dual resistive switching characteristics in DyMn(2)O(5) memory devices Tsai, Yu-Ting; Chang, Ting-Chang; Huang, Wei-Li; Huang, Chih-Wen; Syu, Yong-En; Chen, Shih-Cheng; Sze, Simon M.; Tsai, Ming-Jinn; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:22:46Z Abnormal Subthreshold Leakage Current at High Temperature in InGaZnO Thin-Film Transistors Chang, Geng-Wei; Chang, Ting-Chang; Jhu, Jhe-Ciou; Tsai, Tsung-Ming; Syu, Yong-En; Chang, Kuan-Chang; Tai, Ya-Hsiang; Jian, Fu-Yen; Hung, Ya-Chi
國立交通大學 2014-12-08T15:22:41Z Suppress temperature instability of InGaZnO thin film transistors by N2O plasma treatment, including thermal-induced hole trapping phenomenon under gate bias stress Chang, Geng-Wei; Chang, Ting-Chang; Jhu, Jhe-Ciou; Tsai, Tsung-Ming; Syu, Yong-En; Chang, Kuan-Chang; Tai, Ya-Hsiang; Jian, Fu-Yen; Hung, Ya-Chi
國立交通大學 2014-12-08T15:21:54Z Asymmetric Carrier Conduction Mechanism by Tip Electric Field in WSiOX Resistance Switching Device Syu, Yong-En; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Geng-Wei; Chang, Kuan-Chang; Lou, Jyun-Hao; Tai, Ya-Hsiang; Tsai, Ming-Jinn; Wang, Ying-Lang; Sze, Simon M.
國立交通大學 2014-12-08T15:21:35Z Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium-gallium-zinc oxide thin-film transistors Chang, Geng-Wei; Chang, Ting-Chang; Syu, Yong-En; Tsai, Tsung-Ming; Chang, Kuan-Chang; Tu, Chun-Hao; Jian, Fu-Yen; Hung, Ya-Chi; Tai, Ya-Hsiang
國立交通大學 2014-12-08T15:21:35Z Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO(2) fluid treatment Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Wang, Chia-C.; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M.
國立交通大學 2014-12-08T15:21:32Z The Effect of Silicon Oxide Based RRAM with Tin Doping Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M.
國立交通大學 2014-12-08T15:21:29Z Silicon introduced effect on resistive switching characteristics of WO(X) thin films Syu, Yong-En; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Geng-Wei; Chang, Kuan-Chang; Tai, Ya-Hsiang; Tsai, Ming-Jinn; Wang, Ying-Lang; Sze, Simon M.
國立交通大學 2014-12-08T15:11:50Z Redox Reaction Switching Mechanism in RRAM Device With Pt/CoSiO(X)/TiN Structure Syu, Yong-En; Chang, Ting-Chang; Tsai, Tsung-Ming; Hung, Ya-Chi; Chang, Kuan-Chang; Tsai, Ming-Jinn; Kao, Ming-Jer; Sze, Simon M.
國立交通大學 2014-12-08T15:06:55Z Temperature-dependent memory characteristics of silicon-oxide-nitride-oxide-silicon thin-film-transistors Chen, Shih-Ching; Chang, Ting-Chang; Wu, Yung-Chun; Chin, Jing-Yi; Syu, Yong-En; Sze, S. M.; Chang, Chun-Yen; Wu, Hsing-Hua; Chen, Yi-Chan
國立成功大學 2014-06 Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory Zhang, Rui; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Huang, Syuan-Yong; Chen, Wen-Jen; Chen, Kai-Huang; Lou, Jen-Chung; Chen, Jung-Hui; Young, Tai-Fa; Chen, Min-Chen; Chen, Hsin-Lu; Liang, Shu-Ping; Syu, Yong-En; Sze, Simon M.
國立成功大學 2014-06 Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors Chang, Geng-Wei; Chang, Ting-Chang; Jhu, Jhe-Ciou; Tsai, Tsung-Ming; Chang, Kuan-Chang; Syu, Yong-En; Tai, Ya-Hsiang; Jian, Fu-Yen; Hung, Ya-Chi

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