|
"sze po wen"的相關文件
顯示項目 1-17 / 17 (共1頁)
1
每頁顯示[10|25|50]項目
| 國立成功大學 |
2015-08 |
Liquid-phase-deposited high dielectric zirconium oxide for metal-oxide-semiconductor high electron mobility transistors
|
Hu, Chih-Chun; Chiu, Chu-An; Yu, Chien-Hua; Xu, Jian-Xuan; Wu, Tsu-Yi; Sze, Po-Wen; Wu, Chang-Luen; Wang, Yeong-Her |
| 國立成功大學 |
2014 |
The Novel Formation of Barium Titanate Nanodendrites
|
Huang, Chien-Jung; Chen, Kan-Lin; Chiu, Pin-Hsiang; Sze, Po-Wen; Wang, Yeong-Her |
| 國立成功大學 |
2013-04 |
AlGaN/GaN metal oxide semiconductor high electron mobility transistor using liquid-phase deposited strontium titanate
|
Wu, Tsu-Yi; Hu, Chih-Chun; Sze, Po-Wen; Huang, Tong-Jyun; Adriyanto, Feri; Wu, Chang-Luen; Wang, Yeong-Her |
| 國立成功大學 |
2012-01 |
AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistor With Liquid-Phase-Deposited Barium-Doped TiO2 as a Gate Dielectric
|
Hu, Chih-Chun; Lin, Mon-Sen; Wu, Tsu-Yi; Adriyanto, Feri; Sze, Po-Wen; Wu, Chang-Luen; Wang, Yeong-Her |
| 國立成功大學 |
2009-12 |
AlGaN/GaN MOSHEMTs With Liquid-Phase-Deposited TiO2 as Gate Dielectric
|
Wu, Tsu-Yi; Lin, Shun-Kuan; Sze, Po-Wen; Huang, Jian-Jiun; Chien, Wei-Chi; Hu, Chih-Chun; Tsai, Ming-Ji; Wang, Yeong-Her |
| 國立成功大學 |
2008-09-01 |
AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with low temperature liquid phase deposited Al2O3 gate insulator
|
Basu, Sarbani; Singh, Pramod K.; Sze, Po-Wen; Wang, Yeong-Her |
| 國立成功大學 |
2008-02 |
Diffusion barrier layers for Al on GaAs native oxide grown by liquid phase chemical-enhanced oxidation
|
Huang, Jian-Jiun; Chou, Dei-Wei; Sze, Po-Wen; Wang, Yeong-Her |
| 國立成功大學 |
2006-11 |
Study of diffusion barriers for Au metal on liquid phase oxidized GaAs
|
Sze, Po-Wen; Huang, Jian-Jiun; Chou, Dei-Wei; Wang, Yeong-Her |
| 國立成功大學 |
2006-08 |
Liquid phase oxidation for InGaP/GaAs HBT passivation
|
Sze, Po-Wen; Lee, Kuan-Wei; Huang, Jian-Jiun; Yang, Nan-Ying; Wang, Yeong-Her |
| 國立成功大學 |
2005-12-26 |
Improved breakdown voltage and impact ionization in InAlAs/InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate
|
Lee, Kuan-Wei; Yang, Nan-Ying; Houng, Mau-Phon; Wang, Yeong-Her; Sze, Po-Wen |
| 國立成功大學 |
2005-12 |
InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid-phase-oxidized InGaP as gate dielectric
|
Lee, Kuan-Wei; Wang, Yeong-Her; Houng, Mau-Phon; Yang, Nan-Ying; Lin, Yu-Ju; Sze, Po-Wen |
| 國立成功大學 |
2005-02 |
AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid phase oxidized AlGaAs as gate dielectric
|
Lee, Kuan-Wei; Sze, Po-Wen; Wang, Yeong-Her; Houng, Mau-Phon |
| 國立成功大學 |
2004-12 |
Influence of annealing ambient on GaAs oxide prepared by the liquid phase method
|
Chou, Dei-Wei; Wang, Liang-Tang; Wang, Hwei-Heng; Sze, Po-wen; Wang, Yeong-Her; Houng, Mau-Phon |
| 國立成功大學 |
2003-06-15 |
Very high selective etching of GaAs/Al0.2Ga0.8As for gate recess process to pseudomorphic high electron mobility transistors (PHEMT) applications using citric buffer solution
|
Liao, Chin-I; Sze, Po-Wen; Houng, Mau-Phon; Wang, Yeong-Her |
| 國立成功大學 |
2002-05 |
A planarized shallow-trench-isolation for GaAs devices fabrication using liquid phase chemical enhanced oxidation process
|
Wu, Jau-Yi; Wang, Hwei-Heng; Sze, Po-Wen; Wang, Yeong-Her; Houng, Mau-Phon |
| 國立成功大學 |
2001-12 |
Temperature effect on gate leakage currents in gate dielectric films of GaAs MOSFET
|
Wu, Jau-Yi; Sze, Po-Wen; Wang, Yeong-Her; Houng, Mau-Phon |
| 國立成功大學 |
2001-05 |
Properties of GaAs MOSFET with gate dielectric grown by liquid-phase selective oxidation method
|
Wu, Jau-Yi; Sze, Po-Wen; Deng, Yu-Min; Huang, Guo-Wei; Wang, Yeong-Her; Houng, Mau-Phon |
顯示項目 1-17 / 17 (共1頁)
1
每頁顯示[10|25|50]項目
|
