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Showing items 1-4 of 4 (1 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T04:11:33Z |
Study of AuAgFe/AlGaAs Schottky diodes fabricated byin situ molecular beam epitaxy
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Wang, YH;Houng, MP;Chen, FH;Sze, PW;Hong, M;Mannaerts, JP; Wang, YH; Houng, MP; Chen, FH; Sze, PW; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:33Z |
An investigation of molecular beam epitaxy “in-situ” grown Ag/GaAs schottky diodes
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Wang, YH;Houng, MP;Chen, FH;Sze, PW;Hong, M;Mannaerts, JP; Wang, YH; Houng, MP; Chen, FH; Sze, PW; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 國立交通大學 |
2014-12-08T15:41:01Z |
Liquid phase deposited SiO2 on GaN
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Wu, HR; Lee, KW; Nian, TB; Chou, DW; Wu, JJH; Wang, YH; Houng, MP; Sze, PW; Su, YK; Chang, SJ; Ho, CH; Chiang, CI; Chern, YT; Juang, FS; Wen, TC; Lee, WI; Chyi, JI |
| 國立交通大學 |
2014-12-08T15:04:57Z |
EFFECTS OF SB4/GA RATIOS ON THE ELECTRICAL-PROPERTIES OF GASB SCHOTTKY DIODES
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WANG, YH; HOUNG, MP; SZE, PW; CHEN, JF; CHO, AY |
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