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Institution Date Title Author
國立高雄應用科技大學 2012-12 Bipolar resistive RAM characteristics induced by nickel incorporated into silicon oxide dielectrics for IC applications Tsai, T. M.;K. C. Chang;Chang, T. C.;Syu, Y. E.;Chuang, S. L.;Chang, G. W.;Liu, G. R.;Chen, M. C.;Huang, H. C.;Liu, S. K.;Tai, Y. H.;Gan, D. S.;Yang, Y. L.;Young, T. F.;Tseng, B. H.;Chen, K. H.;Tsai, M. J.;C. Ye, H. Wang;Sze, S.M.

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