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Showing items 1-41 of 41 (1 Page(s) Totally)
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| 國立交通大學 |
2020-10-05T02:01:06Z |
A comprehensive study of enhanced characteristics with localized transition in interface-type vanadium-based devices
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Lin, C. -Y.; Chen, P. -H.; Chang, T. -C.; Huang, W. -C.; Tan, Y. -F.; Lin, Y. -H.; Chen, W. -C.; Lin, C. -C.; Chang, Y. -F.; Chen, Y. -C.; Huang, H. -C.; Ma, X. -H.; Hao, Y.; Sze, S. M. |
| 國立交通大學 |
2019-04-02T06:04:53Z |
Implementation of Functionally Complete Boolean Logic and 8-bit Adder in CMOS Compatible 1T1R RRAMs for In-Memory Computing
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Wang, Z. R.; Li, Y.; Su, Y. T.; Zhou, Y. X.; Yin, K. S.; Cheng, L.; Chang, T. C.; Xue, K. H.; Sze, S. M.; Miao, X. S. |
| 國立交通大學 |
2019-04-02T06:01:05Z |
Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxide
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Yang, F. M.; Chang, T. C.; Liu, P. T.; Yeh, P. H.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C. |
| 國立交通大學 |
2019-04-02T06:00:19Z |
Nonvolatile memory effect of tungsten nanocrystals under oxygen plasma treatments
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Chen, Shih-Cheng; Chang, Ting-Chang; Chen, Wei-Ren; Lo, Yuan-Chun; Wu, Kai-Ting; Sze, S. M.; Chen, Jason; Liao, I. H.; Yeh(Huang), Fon-Shan |
| 國立交通大學 |
2014-12-16T08:15:19Z |
Physics of semiconductor devices
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Sze, S M |
| 國立交通大學 |
2014-12-16T08:14:56Z |
Modern semiconductor device physics
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Sze, S M |
| 國立交通大學 |
2014-12-16T08:14:56Z |
Physics of semiconductor devices
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Sze, S M |
| 國立交通大學 |
2014-12-16T08:14:56Z |
Semiconductor sensors
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Sze, S M |
| 國立交通大學 |
2014-12-16T08:14:56Z |
Physics of semiconductor devices
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Sze, S M |
| 國立交通大學 |
2014-12-16T08:14:56Z |
High-speed semiconductor devices
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Sze, S M |
| 國立交通大學 |
2014-12-16T08:14:56Z |
VLSI technology
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Sze, S M |
| 國立交通大學 |
2014-12-16T08:14:56Z |
Semiconductor devices, physics and technology
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Sze, S M |
| 國立交通大學 |
2014-12-16T08:14:56Z |
Semiconductor devices, physics and technology
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Sze, S M |
| 國立交通大學 |
2014-12-16T08:14:56Z |
Physics of semiconductor devices
|
Sze, S M |
| 國立交通大學 |
2014-12-12T01:37:17Z |
氧化鉺薄膜於電阻式記憶體的製作與轉態特性之研究
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陳俊任; Chen, Jiun-Ren; 施敏; 張鼎張; Sze, S. M.; Chang, Ting-Chang |
| 國立交通大學 |
2014-12-12T01:37:15Z |
二氧化錳與氧化鋁應用於電阻式轉態記憶體之特性研究與電性分析
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姜蘭欣; Chiang, Lan-Shin; 施敏; 張鼎張; Sze, S.M.; Chang, Ting-Chang |
| 國立交通大學 |
2014-12-08T15:48:10Z |
Nonvolatile memory effect of tungsten nanocrystals under oxygen plasma treatments
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Chen, Shih-Cheng; Chang, Ting-Chang; Chen, Wei-Ren; Lo, Yuan-Chun; Wu, Kai-Ting; Sze, S. M.; Chen, Jason; Liao, I. H.; Yeh(Huang), Fon-Shan |
| 國立交通大學 |
2014-12-08T15:38:10Z |
Carrier Transport and Multilevel Switching Mechanism for Chromium Oxide Resistive Random-Access Memory
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Chen, Shih-Cheng; Chang, Ting-Chang; Chen, Shih-Yang; Li, Hung-Wei; Tsai, Yu-Ting; Chen, Chi-Wen; Sze, S. M.; Yeh(Huang), Fon-Shan; Tai, Ya-Hsiang |
| 國立交通大學 |
2014-12-08T15:36:51Z |
InZnSnO-Based Electronic Devices for Flat Panel Display Applications
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Liu, Po-Tsun; Fuh, Chur-Shyang; Fan, Yang-Shun; Sze, S. M. |
| 國立交通大學 |
2014-12-08T15:31:45Z |
Role of Oxygen in Amorphous In-Ga-Zn-O Thin Film Transistor for Ambient Stability
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Fuh, Chur-Shyang; Liu, Po-Tsun; Chou, Yi-Teh; Teng, Li-Feng; Sze, S. M. |
| 國立交通大學 |
2014-12-08T15:29:28Z |
Bipolar resistive switching of chromium oxide for resistive random access memory
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Chen, Shih-Cheng; Chang, Ting-Chang; Chen, Shih-Yang; Chen, Chi-Wen; Chen, Shih-Ching; Sze, S. M.; Tsai, Ming-Jinn; Kao, Ming-Jer; Huang, Fon-Shan Yeh |
| 國立交通大學 |
2014-12-08T15:28:55Z |
The Floating-Gate Non-Volatile Semiconductor Memory-From Invention to the Digital Age
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Sze, S. M. |
| 國立交通大學 |
2014-12-08T15:20:48Z |
Investigating the improvement of resistive switching trends after post-forming negative bias stress treatment
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Tseng, Hsueh-Chih; Chang, Ting-Chang; Huang, Jheng-Jie; Yang, Po-Chun; Chen, Yu-Ting; Jian, Fu-Yen; Sze, S. M.; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:14:28Z |
Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels
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Chen, Shih-Ching; Chang, Ting-Chang; Liu, Po-Tsun; Wu, Yung-Chun; Yeh, Ping-Hung; Weng, Chi-Feng; Sze, S. M.; Chang, Chun-Yen; Lien, Chen-Hsin |
| 國立交通大學 |
2014-12-08T15:14:27Z |
Memory characteristics of Co nanocrystal memory device with HfO(2) as blocking oxide
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Yang, F. M.; Chang, T. C.; Liu, P. T.; Yeh, P. H.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C. |
| 國立交通大學 |
2014-12-08T15:14:01Z |
Nickel nanocrystals with HfO2 blocking oxide for nonvolatile memory application
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Yang, F. M.; Chang, T. C.; Liu, P. T.; Chen, U. S.; Yeh, P. H.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C. |
| 國立交通大學 |
2014-12-08T15:14:01Z |
Using double layer CoSi2 nanocrystals to improve the memory effects of nonvolatile memory devices
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Yang, F. M.; Chang, T. C.; Liu, P. T.; Yeh, P. H.; Chen, U. S.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C. |
| 國立交通大學 |
2014-12-08T15:13:26Z |
A novel nanowire channel poly-Si TFT functioning as transistor and nonvolatile SONOS memory
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Chen, Shih-Ching; Chang, Ting-Chang; Liu, Po-Tsun; Wu, Yung-Chun; Lin, Po-Shun; Tseng, Bae-Heng; Shy, Jang-Hung; Sze, S. M.; Chang, Chun-Yen; Lien, Chen-Hsin |
| 國立交通大學 |
2014-12-08T15:13:06Z |
Pi-shape gate polycrystalline silicon thin-film transistor for nonvolatile memory applications
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Chen, Shih-Ching; Chang, Ting-Chang; Liu, Po-Tsun; Wu, Yung-Chun; Ko, Chin-Cheng; Yang, Sidney; Feng, Li-Wei; Sze, S. M.; Chang, Chun-Yen; Lien, Chen-Hsin |
| 國立交通大學 |
2014-12-08T15:13:06Z |
Nonvolatile Si/SiO2/SiN/SiO2/Si type polycrystalline silicon thin-film-transistor memory with nanowire channels for improvement of erasing characteristics
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Chen, Shih-Ching; Chang, Ting-Chang; Liu, Po-Tsun; Wu, Yung-Chun; Chin, Jing-Yi; Yeh, Ping-Hung; Feng, Li-Wei; Sze, S. M.; Chang, Chun-Yen; Lien, Chen-Hsin |
| 國立交通大學 |
2014-12-08T15:12:42Z |
Tungsten oxide/tungsten nanocrystals for nonvolatile memory devices
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Chen, C. H.; Chang, T. C.; Liao, I. H.; Xi, P. B.; Hsieh, Joe; Chen, Jason; Huang, Tensor; Sze, S. M.; Chen, U. S.; Chen, J. R. |
| 國立交通大學 |
2014-12-08T15:12:18Z |
Reliability characteristics of NiSi nanocrystals embedded in oxide and nitride layers for nonvolatile memory application
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Chen, Wei-Ren; Chang, Ting-Chang; Yeh, Jui-Lung; Sze, S. M.; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:11:54Z |
Influence of hydrogen plasma treatment on charge storage characteristics in high density tungsten nanocrystal nonvolatile memory
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Chen, Shih-Cheng; Chang, Ting-Chang; Chen, Wei-Ren; Lo, Yuan-Chun; Wu, Kai-Ting; Sze, S. M.; Chen, Jason; Liao, I. H.; Yeh (Huang), Fon-Shan |
| 國立交通大學 |
2014-12-08T15:11:26Z |
Passivation effect of poly-Si thin-film transistors with fluorine-ion-implanted spacers
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Chen, Wei-Ren; Chang, Ting-Chang; Liu, Po-Tsun; Wu, Chen Jung; Tu, Chun-Hao; Sze, S. M.; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:10:44Z |
Formation and nonvolatile memory characteristics of multilayer nickel-silicide NCs embedded in nitride layer
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Chen, Wei-Ren; Chang, Ting-Chang; Yeh, Jui-Lung; Sze, S. M.; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:07:15Z |
Effects of postgate dielectric treatment on germanium-based metal-oxide-semiconductor device by supercritical fluid technology
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Liu, Po-Tsun; Huang, Chen-Shuo; Huang, Yi-Ling; Lin, Jing-Ru; Cheng, Szu-Lin; Nishi, Yoshio; Sze, S. M. |
| 國立交通大學 |
2014-12-08T15:06:55Z |
Temperature-dependent memory characteristics of silicon-oxide-nitride-oxide-silicon thin-film-transistors
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Chen, Shih-Ching; Chang, Ting-Chang; Wu, Yung-Chun; Chin, Jing-Yi; Syu, Yong-En; Sze, S. M.; Chang, Chun-Yen; Wu, Hsing-Hua; Chen, Yi-Chan |
| 國立交通大學 |
2014-12-08T15:05:29Z |
Formation and nonvolatile memory characteristics of W nanocrystals by in-situ steam generation oxidation
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Chen, Shih-Cheng; Chang, Ting-Chang; Hsieh, Chieh-Ming; Li, Hung-Wei; Sze, S. M.; Nien, Wen-Ping; Chan, Chia-Wei; Yeh (Huang), Fon-Shan; Tai, Ya-Hsiang |
| 國立交通大學 |
2014-12-08T15:05:12Z |
Nickel silicide nanocrystals embedded in SiO2 and HfO2 for nonvolatile memory application
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Yang, F. M.; Chang, T. C.; Liu, Po-Tsun; Yeh, Y. H.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C. |
| 國立交通大學 |
2014-12-08T15:05:07Z |
Characteristics of poly-Si TFT combined with nonvolatile SONOS memory and nanowire channels structure
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Chen, Shih-Ching; Chang, Ting-Chang; Liu, Po-Tsun; Wu, Yung-Chun; Lin, Po-Shun; Chen, Shih-Cheng; Chin, Jing-Yi; Sze, S. M.; Chang, Chun-Yen; Lien, Chen-Hsin |
| 國立高雄應用科技大學 |
2012-12 |
Bipolar resistive RAM characteristics induced by nickel incorporated into silicon oxide dielectrics for IC applications
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Tsai, T. M.;K. C. Chang;Chang, T. C.;Syu, Y. E.;Chuang, S. L.;Chang, G. W.;Liu, G. R.;Chen, M. C.;Huang, H. C.;Liu, S. K.;Tai, Y. H.;Gan, D. S.;Yang, Y. L.;Young, T. F.;Tseng, B. H.;Chen, K. H.;Tsai, M. J.;C. Ye, H. Wang;Sze, S.M. |
Showing items 1-41 of 41 (1 Page(s) Totally)
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