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Taiwan Academic Institutional Repository >
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"sze simon m"
Showing items 11-35 of 238 (10 Page(s) Totally)
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| 國立交通大學 |
2020-02-02T23:54:28Z |
A characteristic improved technique and analysis with plasma treatment to the electrode on oxide-based resistive random access memory
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Lin, Chih-Yang; Chang, Ting-Chang; Pan, Chih-Hung; Chen, Min-Chen; Xu, You-Lin; Tan, Yung-Fang; Wu, Pei-Yu; Chen, Chun-Kuei; Huang, Wei-Chen; Lin, Yun-Hsuan; Chao, Yu-Ting; Shou, Cheng-Yun; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M. |
| 國立交通大學 |
2019-12-13T01:12:22Z |
Overcoming Limited Resistance in 1T1R RRAM Caused by Pinch-Off Voltage During Reset Process
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Zheng, Hao-Xuan; Chen, Min-Chen; Chang, Ting-Chang; Su, Yu-Ting; Chen, Wen-Chung; Huang, Wei-Chen; Wu, Pei-Yu; Tan, Yung-Fang; Xu, You-Lin; Zhang, Yong-Ci; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M. |
| 國立交通大學 |
2019-12-13T01:12:21Z |
Investigation of the Capacitance-Voltage Electrical Characteristics of Thin-Film Transistors Caused by Hydrogen Diffusion under Negative Bias Stress in a Moist Environment
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Chen, Hong-Chih; Kuo, Chuan-Wei; Chang, Ting-Chang; Lai, Wei-Chih; Chen, Po-Hsun; Chen, Guan-Fu; Huang, Shin-Ping; Chen, Jian-Jie; Zhou, Kuan-Ju; Shih, Chih-Cheng; Tsao, Yu-Ching; Huang, Hui-Chun; Sze, Simon M. |
| 國立交通大學 |
2019-12-13T01:12:20Z |
Investigation of the forming process under UV illumination in HfO2-based resistance random access memory with a transparent electrode
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Huang, Wei-Chen; Huang, Shin-Ping; Chen, Po-Hsun; Chen, Min-Chen; Chang, Ting-Chang; Shih, Chih-Cheng; Tseng, Yi-Ting; Zheng, Hao-Xuan; Tan, Yung-Fang; Wu, Chung-Wei; Yeh, Yuh-Suan; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M. |
| 國立交通大學 |
2019-12-13T01:10:04Z |
Investigation of resistive switching in copper/InGaZnO/Al2O3-based memristor
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Gan, Kai-Jhih; Chang, Wei-Chiao; Liu, Po-Tsun; Sze, Simon M. |
| 國立交通大學 |
2019-12-13T01:10:02Z |
Highly durable and flexible gallium-based oxide conductive-bridging random access memory
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Gan, Kai-Jhih; Liu, Po-Tsun; Chien, Ta-Chun; Ruan, Dun-Bao; Sze, Simon M. |
| 國立交通大學 |
2019-12-13T01:09:52Z |
The Effect of Humidity on Reducing Forming Voltage in Conductive-Bridge Random Access Memory With an Alloy Electrode
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Lin, Shih-Kai; Chen, Min-Chen; Chang, Ting-Chang; Lien, Chen-Hsin; Chang, Jing-Shuen; Wu, Cheng-Hsien; Tseng, Yi-Ting; Xu, You-Lin; Huang, Kai-Lin; Sun, Li-Chuan; Zhang, Yong-Ci; Chiu, Yu-Ju; Sze, Simon M. |
| 國立交通大學 |
2019-10-05T00:08:42Z |
Bipolar resistive switching characteristics of tungsten-doped indium-zinc oxide conductive-bridging random access memory
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Gan, Kai-Jhih; Liu, Po-Tsun; Lin, Sheng-Jie; Ruan, Dun-Bao; Chien, Ta-Chun; Chiu, Yu-Chuan; Sze, Simon M. |
| 國立交通大學 |
2019-09-02T07:46:14Z |
Indium Diffusion Behavior and Application in HfO2-Based Conductive Bridge Random Access Memory
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Zheng, Hao-Xuan; Shih, Chih-Cheng; Chang, Ting-Chang; Shih, Lin-Yi; Shih, Yao-Kai; Tseng, Yi-Ting; Chen, Wen-Chung; Huang, Wei-Chen; Yang, Chih-Cheng; Wu, Pei-Yu; Huang, Hui-Chun; Tsai, Tsung-Ming; Sze, Simon M. |
| 國立交通大學 |
2019-08-02T02:18:36Z |
Evaluation of an InAs HEMT with source-connected field plate for high-speed and low-power logic applications
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Yao, Jing Neng; Lin, Yueh Chin; Lin, Min Song; Huang, Ting Jui; Hsu, Heng Tung; Sze, Simon M.; Chang, Edward Y. |
| 國立交通大學 |
2019-08-02T02:18:32Z |
Investigating Material Changes at Different Gadolinium Doping Power Levels in Indium-Tin Oxide Intended for Use as an Insulator in Resistive Switching Memory
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Lin, Chun-Chu; Chen, Po-Hsun; Chen, Min-Chen; Chang, Ting-Chang; Lin, Chih-Yang; Zheng, Hao-Xuan; Chen, Chun-Kuei; Huang, Wei-Chen; Chen, Wen-Chung; Huang, Hui-Chun; Tsai, Tsung-Ming; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M. |
| 國立交通大學 |
2019-08-02T02:18:27Z |
Communication-Potential of the pi-Gate InAs HEMTs for High-Speed and Low-Power Logic Applications
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Yao, Jing-Neng; Lin, Yueh-Chin; Wong, Ying-Chieh; Huang, Ting-Jui; Hsu, Heng-Tung; Sze, Simon M.; Chang, Edward Yi |
| 國立交通大學 |
2019-08-02T02:15:33Z |
Performance Enhancement for Tungsten-Doped Indium Oxide Thin Film Transistor by Hydrogen Peroxide as Cosolvent in Room-Temperature Supercritical Fluid Systems
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Ruan, Dun-Bao; Liu, Po-Tsun; Yu, Min-Chin; Chien, Ta-Chun; Chiu, Yu-Chuan; Gan, Kai-Jhih; Sze, Simon M. |
| 國立交通大學 |
2019-05-02T00:25:48Z |
LiSiOX-Based Analog Memristive Synapse for Neuromorphic Computing
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Chen, Jia; Lin, Chih-Yang; Li, Yi; Qin, Chao; Lu, Ke; Wang, Jie-Ming; Chen, Chun-Kuei; He, Yu-Hui; Chang, Ting-Chang; Sze, Simon M.; Miao, Xiang-Shui |
| 國立交通大學 |
2019-04-03T06:44:32Z |
Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment
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Chen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liang, Shu-Ping; Young, Tai-Fa; Syu, Yong-En; Sze, Simon M. |
| 國立交通大學 |
2019-04-03T06:42:27Z |
Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode
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Chen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liang, Shu-Ping; Young, Tai-Fa; Syu, Yong-En; Sze, Simon M. |
| 國立交通大學 |
2019-04-03T06:41:13Z |
Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment
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Yuan, Fang-Yuan; Deng, Ning; Shih, Chih-Cheng; Tseng, Yi-Ting; Chang, Ting-Chang; Chang, Kuan-Chang; Wang, Ming-Hui; Chen, Wen-Chung; Zheng, Hao-Xuan; Wu, Huaqiang; Qian, He; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T06:00:47Z |
The Demonstration of Increased Selectivity During Experimental Measurement in Filament-Type Vanadium Oxide-Based Selector
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Chen, Chun-Kuei; Lin, Chih-Yang; Chen, Po-Hsun; Chang, Ting-Chang; Shih, Chih-Cheng; Tseng, Yi-Ting; Zheng, Hao-Xuan; Chen, Ying-Chen; Chang, Yao-Feng; Lin, Chun-Chu; Huang, Hui-Chun; Huang, Wei-Chen; Wang, Hao; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T06:00:47Z |
Efficient Implementation of Boolean and Full-Adder Functions With 1T1R RRAMs for Beyond Von Neumann In-Memory Computing
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Wang, Zhuo-Rui; Li, Yi; Su, Yu-Ting; Zhou, Ya-Xiong; Cheng, Long; Chang, Ting-Chang; Xue, Kan-Hao; Sze, Simon M.; Miao, Xiang-Shui |
| 國立交通大學 |
2019-04-02T06:00:29Z |
The influence of temperature on set voltage for different high resistance state in 1T1R devices
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Tan, Yung-Fang; Su, Yu-Ting; Chen, Min-Chen; Chang, Ting-Chang; Tsai, Tsung-Ming; Tseng, Yi-Ting; Yang, Chih-Cheng; Zheng, Hao-Xuan; Chen, Wen-Chung; Lin, Chun-Chu; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T06:00:28Z |
Reconfigurable Boolean Logic in Memristive Crossbar: The Principle and Implementation
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Hu, Si-Yu; Li, Yi; Cheng, Long; Wang, Zhuo-Rui; Chang, Ting-Chang; Sze, Simon M.; Miao, Xiang-Shui |
| 國立交通大學 |
2019-04-02T06:00:27Z |
The influence on electrical characteristics of amorphous indium tungsten oxide thin film transistors with multi-stacked active layer structure
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Ruan, Dun-Bao; Liu, Po-Tsun; Gan, Kai-Jhih; Chiu, Yu-Chuan; Yu, Min-Chin; Chien, Ta-Chun; Chen, Yi-Heng; Kuo, Po-Yi; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T06:00:19Z |
Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N-2 and O-2 ambient
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chiang, Cheng-Neng; Lin, Chao-Cheng; Chen, Min-Chen; Chang, Chun-Yen; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T06:00:00Z |
TAOS based Cu/TiW/IGZO/Ga2O3/Pt bilayer CBRAM for low-power display technology
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Gan, Kai-Jhih; Liu, Po-Tsun; Chiu, Yu-Chuan; Ruan, Dun-Bao; Chien, Ta-Chun; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:59:59Z |
Performance improvements of tungsten and zinc doped indium oxide thin film transistor by fluorine based double plasma treatment with a high-K gate dielectric
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Ruan, Dun-Bao; Liu, Po-Tsun; Chiu, Yu-Chuan; Yu, Min-Chin; Gan, Kai-Jhih; Chien, Ta-Chun; Chen, Yi-Heng; Kuo, Po-Yi; Sze, Simon M. |
Showing items 11-35 of 238 (10 Page(s) Totally)
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