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Taiwan Academic Institutional Repository >
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"sze simon m"
Showing items 131-155 of 238 (10 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:35:06Z |
Integrated One Diode-One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography
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Ji, Li; Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chen, Min-Chen; Chang, Ting-Chang; Sze, Simon M.; Yu, Edward T.; Lee, Jack C. |
| 國立交通大學 |
2014-12-08T15:35:05Z |
Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory
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Chu, Tian-Jian; Tsai, Tsung-Ming; Chang, Ting-Chang; Chang, Kuan-Chang; Zhang, Rui; Chen, Kai-Huang; Chen, Jung-Hui; Young, Tai-Fa; Huang, Jen-Wei; Lou, Jen-Chung; Chen, Min-Chen; Huang, Syuan-Yong; Chen, Hsin-Lu; Syu, Yong-En; Bao, Dinghua; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:34:04Z |
Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer
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Chang, Kuan-; Huang, Jen-wei; Chang, Ting-Chang; Tsai, Tsung-Ming; Chen, Kai-Huang; Young, Tai-Fa; Chen, Jung-Hui; Zhang, Rui; Lou, Jen-Chung; Huang, Syuan-Yong; Pan, Yin-Chih; Huang, Hui-Chun; Syu, Yong-En; Gan, Der-Shin; Bao, Ding-Hua; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:34:02Z |
Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory
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Zhang, Rui; Tsai, Tsung-Ming; Chang, Ting-Chang; Chang, Kuan-Chang; Chen, Kai-Huang; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Huang, Syuan-Yong; Chen, Min-Chen; Shih, Chih-Cheng; Chen, Hsin-Lu; Pan, Jhih-Hong; Tung, Cheng-Wei; Syu, Yong-En; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:33:32Z |
High performance of graphene oxide-doped silicon oxide-based resistance random access memory
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Zhang, Rui; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Chen, Kai-Huang; Lou, Jen-Chung; Chen, Jung-Hui; Young, Tai-Fa; Shih, Chih-Cheng; Yang, Ya-Liang; Pan, Yin-Chih; Chu, Tian-Jian; Huang, Syuan-Yong; Pan, Chih-Hung; Su, Yu-Ting; Syu, Yong-En; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:33:04Z |
Low power consumption resistance random access memory with Pt/InOx/TiN structure
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Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:32:57Z |
Characteristics of hafnium oxide resistance random access memory with different setting compliance current
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Su, Yu-Ting; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Chen, Kai-Huang; Tseng, Bae-Heng; Shih, Chih-Cheng; Yang, Ya-Liang; Chen, Min-Chen; Chu, Tian-Jian; Pan, Chih-Hung; Syu, Yong-En; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:32:49Z |
Anomalous Gate Current Hump after Dynamic Negative Bias Stress and Negative-Bias Temperature-Instability in p-MOSFETs with HfxZr1-xO2 and HfO2/Metal Gate Stacks
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Ho, Szu-Han; Chang, Ting-Chang; Wu, Chi-Wei; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Chen, Hua-Mao; Liu, Guan-Ru; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Chen, Daniel; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:32:31Z |
Effects of Microwave Annealing on Nitrogenated Amorphous In-Ga-Zn-O Thin-Film Transistor for Low Thermal Budget Process Application
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Fuh, Chur-Shyang; Liu, Po-Tsun; Teng, Li-Feng; Huang, Sih-Wei; Lee, Yao-Jen; Shieh, Han-Ping D.; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:32:05Z |
Impact of Electroforming Current on Self-Compliance Resistive Switching in an ITO/Gd:SiOx/TiN Structure
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Tseng, Hsueh-Chih; Chang, Ting-Chang; Wu, Yi-Chun; Wu, Sei-Wei; Huang, Jheng-Jie; Chen, Yu-Ting; Yang, Jyun-Bao; Lin, Tzu-Ping; Sze, Simon. M.; Tsai, Ming-Jinn; Wang, Ying-Lang; Chu, Ann-Kuo |
| 國立交通大學 |
2014-12-08T15:32:05Z |
Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device
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Syu, Yong-En; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Chen, Min-Chen; Yang, Ya-Liang; Shih, Chih-Cheng; Chu, Tian-Jian; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:31:55Z |
Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process
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Chang, Kuan-Chang; Tsai, Tsung-Ming; Zhang, Rui; Chang, Ting-Chang; Chen, Kai-Huang; Chen, Jung-Hui; Young, Tai-Fa; Lou, J. C.; Chu, Tian-Jian; Shih, Chih-Cheng; Pan, Jhih-Hong; Su, Yu-Ting; Syu, Yong-En; Tung, Cheng-Wei; Chen, Min-Chen; Wu, Jia-Jie; Hu, Ying; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:31:32Z |
The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory
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Huang, Jen-Wei; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, J. C.; Young, Tai-Fa; Chen, Jung-Hui; Chen, Hsin-Lu; Pan, Yin-Chih; Huang, Xuan; Zhang, Fengyan; Syu, Yong-En; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:31:21Z |
Insertion of a Si layer to reduce operation current for resistive random access memory applications
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Chen, Yu-Ting; Chang, Ting-Chang; Peng, Han-Kuang; Tseng, Hsueh-Chih; Huang, Jheng-Jie; Yang, Jyun-Bao; Chu, Ann-Kuo; Young, Tai-Fa; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:31:21Z |
Performance and characteristics of double layer porous silicon oxide resistance random access memory
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Tsai, Tsung-Ming; Chang, Kuan-Chang; Zhang, Rui; Chang, Ting-Chang; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Tseng, Bae-Heng; Shih, Chih-Cheng; Pan, Yin-Chih; Chen, Min-Chen; Pan, Jhih-Hong; Syu, Yong-En; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:31:09Z |
Enhancement of the stability of resistive switching characteristics by conduction path reconstruction
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Huang, Jheng-Jie; Chang, Ting-Chang; Yu, Chih-Cheng; Huang, Hui-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Yang, Jyun-Bao; Sze, Simon M.; Gan, Der-Shin; Chu, Ann-Kuo; Lin, Jian-Yang; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:30:43Z |
Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices
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Chen, Kai-Huang; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, J. C.; Young, Tai-Fa; Chen, Jung-Hui; Shih, Chih-Cheng; Tung, Cheng-Wei; Syu, Yong-En; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:30:42Z |
Atomic-level quantized reaction of HfOx memristor
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Syu, Yong-En; Chang, Ting-Chang; Lou, Jyun-Hao; Tsai, Tsung-Ming; Chang, Kuan-Chang; Tsai, Ming-Jinn; Wang, Ying-Lang; Liu, Ming; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:30:41Z |
Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment
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Chang, Kuan-Chang; Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Shih, Chih-Cheng; Chu, Tian-Jian; Chen, Jian-Yu; Su, Yu-Ting; Jiang, Jhao-Ping; Chen, Kai-Huang; Huang, Hui-Chun; Syu, Yong-En; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:30:41Z |
Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices
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Chang, Kuan-Chang; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Chen, Min-Chen; Yang, Ya-Liang; Pan, Yin-Chih; Chang, Geng-Wei; Chu, Tian-Jian; Shih, Chih-Cheng; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Syu, Yong-En; Tai, Ya-Hsiang; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:30:31Z |
The Effect of Silicon Oxide Based RRAM with Tin Doping (vol 15, pg H65, 2012)
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Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Liao, Kuo-Hsiao; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:30:22Z |
Charge Quantity Influence on Resistance Switching Characteristic During Forming Process
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Chu, Tian-Jian; Chang, Ting-Chang; Tsai, Tsung-Ming; Wu, Hsing-Hua; Chen, Jung-Hui; Chang, Kuan-Chang; Young, Tai-Fa; Chen, Kai-Hsang; Syu, Yong-En; Chang, Geng-Wei; Chang, Yao-Feng; Chen, Min-Chen; Lou, Jyun-Hao; Pan, Jhih-Hong; Chen, Jian-Yu; Tai, Ya-Hsiang; Ye, Cong; Wang, Hao; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:30:22Z |
Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices
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Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Wu, Hsing-Hua; Chen, Kai-Huang; Chen, Jung-Hui; Young, Tai-Fa; Chu, Tian-Jian; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Syu, Yong-En; Tung, Cheng-Wei; Chang, Geng-Wei; Chen, Min-Chen; Huang, Hui-Chun; Tai, Ya-Hsiang; Gan, Der-Shin; Wu, Jia-Jie; Hu, Ying; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:29:55Z |
Resistive switching characteristics of gallium oxide for nonvolatile memory application
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Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Shih-Ching; Yang, Po-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Sze, Simon M.; Chu, Ann-Kuo; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:29:55Z |
Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory
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Tseng, Hsueh-Chih; Chang, Ting-Chang; Cheng, Kai-Hung; Huang, Jheng-Jie; Chen, Yu-Ting; Jian, Fu-Yen; Sze, Simon M.; Tsai, Ming-Jinn; Chu, Ann-Kuo; Wang, Ying-Lang |
Showing items 131-155 of 238 (10 Page(s) Totally)
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