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Taiwan Academic Institutional Repository >
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"sze simon m"
Showing items 46-70 of 238 (10 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:58:56Z |
Nitric Acid Oxidation of Si for the Tunneling Oxide Application on CoSi2 Nanocrystals Nonvolatile Memory
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Yang-Dong; Lin, Chao-Cheng; Chen, Min-Chen; Lin, Jian-Yang; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:54Z |
High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO2 Pellets for the Nonvolatile Memory Device Application
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Huang, Yu-Hao; Lin, Chao-Cheng; Chen, Min-Chen; Huang, Fon-Shan; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:52Z |
Photoresponsivity Enhancement and Extension of the Detection Spectrum for Amorphous Oxide Semiconductor Based Sensors
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Ruan, Dun-Boo; Liu, Po-Tsun; Chen, Yi-Heng; Chiu, Yu-Chuan; Chien, To-Chun; Yu, Min-Chin; Gan, Kai-Jhih; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:58:50Z |
Investigation of low operation voltage InZnSnO thin-film transistors with different high-k gate dielectric by physical vapor deposition
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Ruan, Dun-Bao; Liu, Po-Tsun; Chiu, Yu-Chuan; Kan, Kai-Zhi; Yu, Min-Chin; Chien, Ta-Chun; Chen, Yi-Heng; Kuo, Po-Yi; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:58:40Z |
InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D
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Chang, Po-Chun; Hsiao, Chih-Jen; Lumbantoruan, Franky Juanda; Wu, Chia-Hsun; Lin, Yen-Ku; Lin, Yueh-Chin; Sze, Simon M.; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:58:39Z |
Contact Engineering of Trilayer Black Phosphorus With Scandium and Gold
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Tsai, Yi-Chia; Magyari-Kope, Blanka; Li, Yiming; Samukawa, Seiji; Nishi, Yoshio; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:57:55Z |
Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment
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Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Wang, Chia-C.; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:57:52Z |
Silicon introduced effect on resistive switching characteristics of WOX thin films
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Syu, Yong-En; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Geng-Wei; Chang, Kuan-Chang; Tai, Ya-Hsiang; Tsai, Ming-Jinn; Wang, Ying-Lang; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:56:52Z |
A Universal Model for Interface-type Threshold Switching Phenomena by Comprehensive Study of Vanadium Oxide-Based Selector
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Lin, Chih-Yang; Chen, Ying-Chen; Gu, Meiqi; Pan, Chih-Hung; Jin, Fu-Yuan; Tseng, Yi-Ting; Hsieh, Cheng Chih; Wu, Xiaohan; Chen, Min-Chen; Chang, Yao-Feng; Zhou, Fei; Fowler, Burt; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Zhao, Yonggang; Sze, Simon M.; Banetjee, Sanjay; Lee, Jack C. |
| 國立交通大學 |
2018-08-21T05:56:29Z |
Impact of Post Deposition Annealing on Resistive Switching in Ga2O3-Based Conductive-Bridge RAM Devices
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Gan, Kai-jhih; Liu, Po-Tsun; Chien, Ta-Chun; Ruan, Dun-Bao; Chiu, Yu-Chuan; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:56:29Z |
High Mobility Tungsten-Doped Thin-Film Transistor on Polyimide Substrate with Low Temperature Process
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Ruan, Dun-Bao; Liu, Po-Tsun; Chiu, Yu-Chuan; Yu, Min-Chin; Gan, Kai-jhih; Chien, Ta-Chun; Kuo, Po-Yi; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:54:30Z |
Inert Pt electrode switching mechanism after controlled polarity-forming process in In2O3-based resistive random access memory
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Wu, Cheng-Hsien; Pan, Chih-Hung; Chen, Po-Hsun; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Shih, Chih-Cheng; Chi, Ting-Yang; Chu, Tian-Jian; Wu, Jia-Ji; Du, Xiaoqin; Zheng, Hao-Xuan; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:54:16Z |
Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode
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Lin, Chih-Yang; Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Zhang, Sheng-Dong; Tsai, Tsung-Ming; Pan, Chih-Hung; Chen, Min-Chen; Su, Yu-Ting; Tseng, Yi-Ting; Chang, Yao-Feng; Chen, Ying-Chen; Huang, Hui-Chun; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:54:06Z |
Recovery of failed resistive switching random access memory devices by a low-temperature supercritical treatment
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Du, Xiaoqin; Wu, Xiaojing; Chang, Ting-Chang; Chang, Kuan-Chang; Pan, Chih-Hung; Wu, Cheng-Hsien; Lin, Yu-Shuo; Chen, Po-Hsun; Zhang, Shengdong; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:54:04Z |
Nonvolatile reconfigurable sequential logic in a HfO2 resistive random access memory array
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Zhou, Ya-Xiong; Li, Yi; Su, Yu-Ting; Wang, Zhuo-Rui; Shih, Ling-Yi; Chang, Ting-Chang; Chang, Kuan-Chang; Long, Shi-Bing; Sze, Simon M.; Miao, Xiang-Shui |
| 國立交通大學 |
2018-08-21T05:53:56Z |
Effect of charge quantity on conduction mechanism of high-and low-resistance states during forming process in a one-transistor-one-resistor resistance random access memory
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Wu, Cheng-Hsien; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Pan, Chih-Hung; Su, Yu-Ting; Chen, Po-Hsun; Lin, Shih-Kai; Hu, Shih-Jie; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:53:52Z |
Performance improvement after nitridation treatment in HfO2-based resistance random-access memory
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Wang, Ming-Hui; Chang, Ting-Chang; Shih, Chih-Cheng; Tseng, Yi-Ting; Tsai, Tsung-Ming; Zheng, Hao-Xuan; Wu, Pei-Yu; Huang, Hui-Chun; Chen, Wen-Chung; Huang, Jen-Wei; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:53:49Z |
Reducing Forming Voltage by Applying Bipolar Incremental Step Pulse Programming in a 1T1R Structure Resistance Random Access Memory
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Zheng, Hao-Xuan; Chang, Ting-Chang; Xue, Kan-Hao; Su, Yu-Ting; Wu, Cheng-Hsien; Shih, Chih-Cheng; Tseng, Yi-Ting; Chen, Wen-Chung; Huang, Wei-Chen; Chen, Chun-Kuei; Miao, Xiang-Shui; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:53:41Z |
Highly Responsive Blue Light Sensor with Amorphous Indium-Zinc-Oxide Thin-Film Transistor based Architecture
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Liu, Po Tsun; Ruan, Dun Bao; Yeh, Xiu Yun; Chiu, Yu Chuan; Zheng, Guang Ting; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:53:19Z |
Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer
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Ruan, Dun-Bao; Liu, Po-Tsun; Chiu, Yu-Chuan; Kuo, Po-Yi; Yu, Min-Chin; Gan, Kai-Jhih; Chien, Ta-Chun; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:53:18Z |
Suppression of endurance degradation by applying constant voltage stress in one-transistor and one-resistor resistive random access memory
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Su, Yu-Ting; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Chen, Hsin-Lu; Chen, Min-Chen; Yang, Chih-Cheng; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:53:11Z |
InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatment
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Chang, Po-Chun; Luc, Quang-Ho; Lin, Yueh-Chin; Lin, Yen-Ku; Wu, Chia-Hsun; Sze, Simon M.; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:02Z |
Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High-k Spacer Structure
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Tseng, Yi-Ting; Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Shih, Chih-Cheng; Huang, Hui-Chun; Yang, Cheng-Chi; Lin, Chih-Yang; Wu, Cheng-Hsien; Zheng, Hao-Xuan; Zhang, Shengdong; Sze, Simon M. |
| 國立交通大學 |
2017-04-21T06:56:37Z |
Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory
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Wang, Zhuo-Rui; Su, Yu-Ting; Li, Yi; Zhou, Ya-Xiong; Chu, Tian-Jian; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Sze, Simon M.; Miao, Xiang-Shui |
| 國立交通大學 |
2017-04-21T06:56:31Z |
Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory
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Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Zhang, Rui; Wang, Tong; Pan, Chih-Hung; Chen, Kai-Huang; Chen, Hua-Mao; Chen, Min-Chen; Tseng, Yi-Ting; Chen, Po-Hsun; Lo, Ikai; Zheng, Jin-Cheng; Lou, Jen-Chung; Sze, Simon M. |
Showing items 46-70 of 238 (10 Page(s) Totally)
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