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Showing items 41-90 of 238  (5 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2019-04-02T05:59:26Z Enhancement of Surface Chemical and Physical Properties of Germanium-Sulfur Thin Film Using a Water-Supplemented Carbon Dioxide Supercritical Fluid Treatment Technique Yang, Chih-Cheng; Chen, Po-Hsun; Shih, Chih-Cheng; Wang, Ming-Hui; Tsai, Tsung-Ming; Zheng, Hao-Xuan; Chen, Wen-Chung; Chen, Min-Chen; Huang, Hui-Chun; Ma, Xiao-Hua; Hao, Yue; Huang, Jen-Wei; Sze, Simon M.; Chang, Ting-Chang
國立交通大學 2019-04-02T05:59:04Z Nitric Acid Oxidized ZrO2 as the Tunneling Oxide of Cobalt Silicide Nanocrystal Memory Devices Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Yang-Dong; Lin, Chao-Cheng; Chen, Min-Chen; Lin, Jian-Yang; Sze, Simon M.; Tseng, Tseung-Yuen
國立交通大學 2019-04-02T05:59:04Z Investigation for coexistence of dual resistive switching characteristics in DyMn2O5 memory devices Tsai, Yu-Ting; Chang, Ting-Chang; Huang, Wei-Li; Huang, Chih-Wen; Syu, Yong-En; Chen, Shih-Cheng; Sze, Simon M.; Tsai, Ming-Jinn; Tseng, Tseung-Yuen
國立交通大學 2019-04-02T05:59:03Z Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications Huang, Sheng-Yao; Chang, Ting-Chang; Chen, Min-Chen; Chen, Shih-Ching; Lo, Hung-Ping; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M.; Tsai, Ming-Jinn
國立交通大學 2019-04-02T05:59:03Z Improving Resistance Switching Characteristics with SiGeOx/SiGeON Double Layer for Nonvolatile Memory Applications Syu, Yong-En; Chang, Ting-Chang; Tsai, Chih-Tsung; Chang, Geng-Wei; Tsai, Tsung-Ming; Chang, Kuan-Chang; Tai, Ya-Hsiang; Tsai, Ming-Jinn; Sze, Simon M.
國立交通大學 2019-04-02T05:58:56Z Nitric Acid Oxidation of Si for the Tunneling Oxide Application on CoSi2 Nanocrystals Nonvolatile Memory Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Yang-Dong; Lin, Chao-Cheng; Chen, Min-Chen; Lin, Jian-Yang; Sze, Simon M.; Tseng, Tseung-Yuen
國立交通大學 2019-04-02T05:58:54Z High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO2 Pellets for the Nonvolatile Memory Device Application Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Huang, Yu-Hao; Lin, Chao-Cheng; Chen, Min-Chen; Huang, Fon-Shan; Sze, Simon M.; Tseng, Tseung-Yuen
國立交通大學 2019-04-02T05:58:52Z Photoresponsivity Enhancement and Extension of the Detection Spectrum for Amorphous Oxide Semiconductor Based Sensors Ruan, Dun-Boo; Liu, Po-Tsun; Chen, Yi-Heng; Chiu, Yu-Chuan; Chien, To-Chun; Yu, Min-Chin; Gan, Kai-Jhih; Sze, Simon M.
國立交通大學 2019-04-02T05:58:50Z Investigation of low operation voltage InZnSnO thin-film transistors with different high-k gate dielectric by physical vapor deposition Ruan, Dun-Bao; Liu, Po-Tsun; Chiu, Yu-Chuan; Kan, Kai-Zhi; Yu, Min-Chin; Chien, Ta-Chun; Chen, Yi-Heng; Kuo, Po-Yi; Sze, Simon M.
國立交通大學 2019-04-02T05:58:40Z InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D Chang, Po-Chun; Hsiao, Chih-Jen; Lumbantoruan, Franky Juanda; Wu, Chia-Hsun; Lin, Yen-Ku; Lin, Yueh-Chin; Sze, Simon M.; Chang, Edward Yi
國立交通大學 2019-04-02T05:58:39Z Contact Engineering of Trilayer Black Phosphorus With Scandium and Gold Tsai, Yi-Chia; Magyari-Kope, Blanka; Li, Yiming; Samukawa, Seiji; Nishi, Yoshio; Sze, Simon M.
國立交通大學 2019-04-02T05:57:55Z Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Wang, Chia-C.; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M.
國立交通大學 2019-04-02T05:57:52Z Silicon introduced effect on resistive switching characteristics of WOX thin films Syu, Yong-En; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Geng-Wei; Chang, Kuan-Chang; Tai, Ya-Hsiang; Tsai, Ming-Jinn; Wang, Ying-Lang; Sze, Simon M.
國立交通大學 2018-08-21T05:56:52Z A Universal Model for Interface-type Threshold Switching Phenomena by Comprehensive Study of Vanadium Oxide-Based Selector Lin, Chih-Yang; Chen, Ying-Chen; Gu, Meiqi; Pan, Chih-Hung; Jin, Fu-Yuan; Tseng, Yi-Ting; Hsieh, Cheng Chih; Wu, Xiaohan; Chen, Min-Chen; Chang, Yao-Feng; Zhou, Fei; Fowler, Burt; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Zhao, Yonggang; Sze, Simon M.; Banetjee, Sanjay; Lee, Jack C.
國立交通大學 2018-08-21T05:56:29Z Impact of Post Deposition Annealing on Resistive Switching in Ga2O3-Based Conductive-Bridge RAM Devices Gan, Kai-jhih; Liu, Po-Tsun; Chien, Ta-Chun; Ruan, Dun-Bao; Chiu, Yu-Chuan; Sze, Simon M.
國立交通大學 2018-08-21T05:56:29Z High Mobility Tungsten-Doped Thin-Film Transistor on Polyimide Substrate with Low Temperature Process Ruan, Dun-Bao; Liu, Po-Tsun; Chiu, Yu-Chuan; Yu, Min-Chin; Gan, Kai-jhih; Chien, Ta-Chun; Kuo, Po-Yi; Sze, Simon M.
國立交通大學 2018-08-21T05:54:30Z Inert Pt electrode switching mechanism after controlled polarity-forming process in In2O3-based resistive random access memory Wu, Cheng-Hsien; Pan, Chih-Hung; Chen, Po-Hsun; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Shih, Chih-Cheng; Chi, Ting-Yang; Chu, Tian-Jian; Wu, Jia-Ji; Du, Xiaoqin; Zheng, Hao-Xuan; Sze, Simon M.
國立交通大學 2018-08-21T05:54:16Z Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode Lin, Chih-Yang; Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Zhang, Sheng-Dong; Tsai, Tsung-Ming; Pan, Chih-Hung; Chen, Min-Chen; Su, Yu-Ting; Tseng, Yi-Ting; Chang, Yao-Feng; Chen, Ying-Chen; Huang, Hui-Chun; Sze, Simon M.
國立交通大學 2018-08-21T05:54:06Z Recovery of failed resistive switching random access memory devices by a low-temperature supercritical treatment Du, Xiaoqin; Wu, Xiaojing; Chang, Ting-Chang; Chang, Kuan-Chang; Pan, Chih-Hung; Wu, Cheng-Hsien; Lin, Yu-Shuo; Chen, Po-Hsun; Zhang, Shengdong; Sze, Simon M.
國立交通大學 2018-08-21T05:54:04Z Nonvolatile reconfigurable sequential logic in a HfO2 resistive random access memory array Zhou, Ya-Xiong; Li, Yi; Su, Yu-Ting; Wang, Zhuo-Rui; Shih, Ling-Yi; Chang, Ting-Chang; Chang, Kuan-Chang; Long, Shi-Bing; Sze, Simon M.; Miao, Xiang-Shui
國立交通大學 2018-08-21T05:53:56Z Effect of charge quantity on conduction mechanism of high-and low-resistance states during forming process in a one-transistor-one-resistor resistance random access memory Wu, Cheng-Hsien; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Pan, Chih-Hung; Su, Yu-Ting; Chen, Po-Hsun; Lin, Shih-Kai; Hu, Shih-Jie; Sze, Simon M.
國立交通大學 2018-08-21T05:53:52Z Performance improvement after nitridation treatment in HfO2-based resistance random-access memory Wang, Ming-Hui; Chang, Ting-Chang; Shih, Chih-Cheng; Tseng, Yi-Ting; Tsai, Tsung-Ming; Zheng, Hao-Xuan; Wu, Pei-Yu; Huang, Hui-Chun; Chen, Wen-Chung; Huang, Jen-Wei; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M.
國立交通大學 2018-08-21T05:53:49Z Reducing Forming Voltage by Applying Bipolar Incremental Step Pulse Programming in a 1T1R Structure Resistance Random Access Memory Zheng, Hao-Xuan; Chang, Ting-Chang; Xue, Kan-Hao; Su, Yu-Ting; Wu, Cheng-Hsien; Shih, Chih-Cheng; Tseng, Yi-Ting; Chen, Wen-Chung; Huang, Wei-Chen; Chen, Chun-Kuei; Miao, Xiang-Shui; Sze, Simon M.
國立交通大學 2018-08-21T05:53:41Z Highly Responsive Blue Light Sensor with Amorphous Indium-Zinc-Oxide Thin-Film Transistor based Architecture Liu, Po Tsun; Ruan, Dun Bao; Yeh, Xiu Yun; Chiu, Yu Chuan; Zheng, Guang Ting; Sze, Simon M.
國立交通大學 2018-08-21T05:53:19Z Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer Ruan, Dun-Bao; Liu, Po-Tsun; Chiu, Yu-Chuan; Kuo, Po-Yi; Yu, Min-Chin; Gan, Kai-Jhih; Chien, Ta-Chun; Sze, Simon M.
國立交通大學 2018-08-21T05:53:18Z Suppression of endurance degradation by applying constant voltage stress in one-transistor and one-resistor resistive random access memory Su, Yu-Ting; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Chen, Hsin-Lu; Chen, Min-Chen; Yang, Chih-Cheng; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.
國立交通大學 2018-08-21T05:53:11Z InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatment Chang, Po-Chun; Luc, Quang-Ho; Lin, Yueh-Chin; Lin, Yen-Ku; Wu, Chia-Hsun; Sze, Simon M.; Chang, Edward Yi
國立交通大學 2018-08-21T05:53:02Z Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High-k Spacer Structure Tseng, Yi-Ting; Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Shih, Chih-Cheng; Huang, Hui-Chun; Yang, Cheng-Chi; Lin, Chih-Yang; Wu, Cheng-Hsien; Zheng, Hao-Xuan; Zhang, Shengdong; Sze, Simon M.
國立交通大學 2017-04-21T06:56:37Z Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory Wang, Zhuo-Rui; Su, Yu-Ting; Li, Yi; Zhou, Ya-Xiong; Chu, Tian-Jian; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Sze, Simon M.; Miao, Xiang-Shui
國立交通大學 2017-04-21T06:56:31Z Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Zhang, Rui; Wang, Tong; Pan, Chih-Hung; Chen, Kai-Huang; Chen, Hua-Mao; Chen, Min-Chen; Tseng, Yi-Ting; Chen, Po-Hsun; Lo, Ikai; Zheng, Jin-Cheng; Lou, Jen-Chung; Sze, Simon M.
國立交通大學 2017-04-21T06:56:27Z Ultralow Power Resistance Random Access Memory Device and Oxygen Accumulation Mechanism in an Indium-Tin-Oxide Electrode Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Shih, Chih-Cheng; Lin, Chih-Yang; Chen, Po-Hsun; Wu, Huaqiang; Deng, Ning; Qian, He; Sze, Simon M.
國立交通大學 2017-04-21T06:56:21Z Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium-Tin Oxide Insulator in Resistive Random Access Memory Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Shih, Chih-Cheng; Wu, Cheng-Hsien; Yang, Cheng-Chi; Su, Yu-Ting; Lin, Chih-Yang; Tseng, Yi-Ting; Chen, Min-Chen; Wang, Ruey-Chi; Leu, Ching-Chich; Chen, Kai-Huang; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.
國立交通大學 2017-04-21T06:56:18Z Resistance Switching Characteristics Induced by O-2 Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Chen, Min-Chen; Su, Yu-Ting; Lin, Chih-Yang; Tseng, Yi-Ting; Huang, Hui-Chun; Wu, Huaqiang; Deng, Ning; Qian, He; Sze, Simon M.
國立交通大學 2017-04-21T06:56:06Z Reducing operation voltages by introducing a low-k switching layer in indium-tin-oxide-based resistance random access memory Jin, Fu-Yuan; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Chen, Po-Hsun; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.
國立交通大學 2017-04-21T06:55:57Z Modifying Indium-Tin-Oxide by Gas Cosputtering for Use as an Insulator in Resistive Random Access Memory Chen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Su, Yu-Ting; Wu, Cheng-Hsien; Su, Wan-Ching; Yang, Chih-Cheng; Chen, Min-Chen; Tu, Chun-Hao; Chen, Kai-Huang; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.
國立交通大學 2017-04-21T06:55:52Z Engineering interface-type resistance switching based on forming current compliance in ITO/Ga2O3: ITO/TiN resistance random access memory: Conduction mechanisms, temperature effects, and electrode influence Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chen, Po-Hsun; Chang-Chien, Shi-Wang; Chen, Min-Chen; Huang, Hui-Chun; Wu, Huaqiang; Deng, Ning; Qian, He; Sze, Simon M.
國立交通大學 2017-04-21T06:55:50Z Effects of erbium doping of indium tin oxide electrode in resistive random access memory Chen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Jin, Fu-Yuan; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.
國立交通大學 2017-04-21T06:55:49Z Effect of different constant compliance current for hopping conduction distance properties of the Sn:SiOx thin film RRAM devices Chen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liao, Kuo-Hsiao; Syu, Yong-En; Sze, Simon M.
國立交通大學 2017-04-21T06:55:32Z Improving Performance by Doping Gadolinium Into the Indium-Tin-Oxide Electrode in HfO2-Based Resistive Random Access Memory Chen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Jin, Fu-Yuan; Chen, Min-Chen; Huang, Hui-Chun; Wang, Ming-Hui; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.
國立交通大學 2017-04-21T06:55:20Z Electrical Analysis and PBTI Reliability of In0.53Ga0.47As MOSFETs With AlN Passivation Layer and NH3 Postremote Plasma Treatment Chang, Po-Chun; Luc, Quang-Ho; Lin, Yueh-Chin; Liu, Shih-Chien; Lin, Yen-Ku; Sze, Simon M.; Chang, Edward Yi
國立交通大學 2017-04-21T06:55:15Z Effects of Nitrogen on Amorphous Nitrogenated InGaZnO (a-IGZO:N) Thin Film Transistors Liu, Po-Tsun; Chang, Chih-Hsiang; Fuh, Chur-Shyang; Liao, Yu-Tei; Sze, Simon M.
國立交通大學 2017-04-21T06:55:15Z Adjustable built-in resistor on oxygen-vacancy-rich electrode-capped resistance random access memory Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Chen, Po-Hsun; Chen, Min-Chen; Sze, Simon M.
國立交通大學 2017-04-21T06:55:10Z Confirmation of filament dissolution behavior by analyzing electrical field effect during reset process in oxide-based RRAM Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Lin, Wen-Yan; Chen, Min-Chen; Sze, Simon M.
國立交通大學 2017-04-21T06:49:50Z An Au-free GaN High Electron Mobility Transistor with Ti/Al/W Ohmic Metal Structure Yao, Jing-Neng; Lin, Yueh-Chin; Chuang, Yu-Lin; Huang, Yu-Xiang; Shih, Wang-Cheng; Sze, Simon M.; Chang, Edward Yi
國立交通大學 2017-04-21T06:48:33Z Resistive Switching of SiOX with One Diode-One Resistor Nanopillar Architecture Fabricated via Nanosphere Lithography Ji, Li; Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chen, Min-Chen; Chang, Ting-Chang; Sze, Simon M.; Yu, Edward T.; Lee, Jack C.
國立成功大學 2016-12 Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium-Tin Oxide Insulator in Resistive Random Access Memory Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Shih, Chih-Cheng; Wu, Cheng-Hsien; Yang, Cheng-Chi; Su, Yu-Ting; Lin, Chih-Yang; Tseng, Yi-Ting; Chen, Min-Chen; Wang, Ruey-Chi; Leu, Ching-Chich; Chen, Kai-Huang; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.
國立成功大學 2016-12 Ultralow Power Resistance Random Access Memory Device and Oxygen Accumulation Mechanism in an Indium-Tin-Oxide Electrode Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Shih, Chih-Cheng; Lin, Chih-Yang; Chen, Po-Hsun; Wu, Huaqiang; Deng, Ning; Qian, He; Sze, Simon M.
國立成功大學 2016-11 Modifying Indium-Tin-Oxide by Gas Cosputtering for Use as an Insulator in Resistive Random Access Memory Chen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Su, Yu-Ting; Wu, Cheng-Hsien; Su, Wan-Ching; Yang, Chih-Cheng; Chen, Min-Chen; Tu, Chun-Hao; Chen, Kai-Huang; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.
國立成功大學 2016-10-31 Engineering interface-type resistance switching based on forming current compliance in ITO/Ga2O3: ITO/TiN resistance random access memory: Conduction mechanisms, temperature effects, and electrode influence Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chen, Po-Hsun; Chang-Chien, Shi-Wang; Chen, Min-Chen; Huang, Hui-Chun; Wu, Huaqiang; Deng, Ning; Qian, He; Sze, Simon M.
國立成功大學 2016-10 Adjustable built-in resistor on oxygen-vacancy-rich electrode-capped resistance random access memory Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Chen, Po-Hsun; Chen, Min-Chen; Sze, Simon M.

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