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机构 日期 题名 作者
國立交通大學 2017-04-21T06:55:52Z Engineering interface-type resistance switching based on forming current compliance in ITO/Ga2O3: ITO/TiN resistance random access memory: Conduction mechanisms, temperature effects, and electrode influence Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chen, Po-Hsun; Chang-Chien, Shi-Wang; Chen, Min-Chen; Huang, Hui-Chun; Wu, Huaqiang; Deng, Ning; Qian, He; Sze, Simon M.
國立交通大學 2017-04-21T06:55:50Z Effects of erbium doping of indium tin oxide electrode in resistive random access memory Chen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Jin, Fu-Yuan; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.
國立交通大學 2017-04-21T06:55:49Z Effect of different constant compliance current for hopping conduction distance properties of the Sn:SiOx thin film RRAM devices Chen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liao, Kuo-Hsiao; Syu, Yong-En; Sze, Simon M.
國立交通大學 2017-04-21T06:55:32Z Improving Performance by Doping Gadolinium Into the Indium-Tin-Oxide Electrode in HfO2-Based Resistive Random Access Memory Chen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Jin, Fu-Yuan; Chen, Min-Chen; Huang, Hui-Chun; Wang, Ming-Hui; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.
國立交通大學 2017-04-21T06:55:20Z Electrical Analysis and PBTI Reliability of In0.53Ga0.47As MOSFETs With AlN Passivation Layer and NH3 Postremote Plasma Treatment Chang, Po-Chun; Luc, Quang-Ho; Lin, Yueh-Chin; Liu, Shih-Chien; Lin, Yen-Ku; Sze, Simon M.; Chang, Edward Yi
國立交通大學 2017-04-21T06:55:15Z Effects of Nitrogen on Amorphous Nitrogenated InGaZnO (a-IGZO:N) Thin Film Transistors Liu, Po-Tsun; Chang, Chih-Hsiang; Fuh, Chur-Shyang; Liao, Yu-Tei; Sze, Simon M.
國立交通大學 2017-04-21T06:55:15Z Adjustable built-in resistor on oxygen-vacancy-rich electrode-capped resistance random access memory Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Chen, Po-Hsun; Chen, Min-Chen; Sze, Simon M.
國立交通大學 2017-04-21T06:55:10Z Confirmation of filament dissolution behavior by analyzing electrical field effect during reset process in oxide-based RRAM Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Lin, Wen-Yan; Chen, Min-Chen; Sze, Simon M.
國立交通大學 2017-04-21T06:49:50Z An Au-free GaN High Electron Mobility Transistor with Ti/Al/W Ohmic Metal Structure Yao, Jing-Neng; Lin, Yueh-Chin; Chuang, Yu-Lin; Huang, Yu-Xiang; Shih, Wang-Cheng; Sze, Simon M.; Chang, Edward Yi
國立交通大學 2017-04-21T06:48:33Z Resistive Switching of SiOX with One Diode-One Resistor Nanopillar Architecture Fabricated via Nanosphere Lithography Ji, Li; Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chen, Min-Chen; Chang, Ting-Chang; Sze, Simon M.; Yu, Edward T.; Lee, Jack C.

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