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"sze simon m"
Showing items 161-210 of 238 (5 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:28:51Z |
Analysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistors
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Ho, Szu-Han; Chang, Ting-Chang; Lu, Ying-shin; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Chen, Hua-Mao; Wu, Chi-Wei; Luo, Hung-Ping; Liu, Guan-Ru; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:28:27Z |
Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical CO2 Fluid Treatment
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Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Chang, Geng-Wei; Syu, Yong-En; Su, Yu-Ting; Liu, Guan-Ru; Liao, Kuo-Hsiao; Chen, Min-Chen; Huang, Hui-Chun; Tai, Ya-Hsiang; Gan, Der-Shin; Ye, Cong; Wang, Hao; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:28:27Z |
Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications
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Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Syu, Yong-En; Chuang, Siang-Lan; Chang, Geng-Wei; Liu, Guan-Ru; Chen, Min-Chen; Huang, Hui-Chun; Liu, Shih-Kun; Tai, Ya-Hsiang; Gan, Der-Shin; Yang, Ya-Liang; Young, Tai-Fa; Tseng, Bae-Heng; Chen, Kai-Huang; Tsai, Ming-Jinn; Ye, Cong; Wang, Hao; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:28:19Z |
Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment
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Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Syu, Yong-En; Liao, Kuo-Hsiao; Tseng, Bae-Heng; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:28:02Z |
Influence of Oxygen Concentration on Resistance Switching Characteristics of Gallium Oxide
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Huang, Jheng-Jie; Chang, Ting-Chang; Yang, Jyun-Bao; Chen, Shih-Ching; Yang, Po-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Sze, Simon M.; Chu, Ann-Kuo; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:27:50Z |
Investigation for coexistence of dual resistive switching characteristics in DyMn(2)O(5) memory devices
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Tsai, Yu-Ting; Chang, Ting-Chang; Huang, Wei-Li; Huang, Chih-Wen; Syu, Yong-En; Chen, Shih-Cheng; Sze, Simon M.; Tsai, Ming-Jinn; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:27:20Z |
Nitric Acid Oxidized ZrO(2) as the Tunneling Oxide of Cobalt Silicide Nanocrystal Memory Devices
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Yang-Dong; Lin, Chao-Cheng; Chen, Min-Chen; Lin, Jian-Yang; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:27:14Z |
Resistive switching characteristics of Sm(2)O(3) thin films for nonvolatile memory applications
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Huang, Sheng-Yao; Chang, Ting-Chang; Chen, Min-Chen; Chen, Shih-Ching; Lo, Hung-Ping; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M.; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:25:11Z |
Fabrication of pattern-depended metal induced lateral crystallization polysilicon thin film transistors with NH3 plasma passivation effects
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Chou, Cheng-Wei; Wu, Yung-Chun; Wu, Yuan-Chun; Chang, Ting-Chang; Liu, Po-Tsun; Lou, Jen-Chung; Huang, Wen-Jun; Chang, Chun-Yen; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:24:05Z |
Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
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Ho, Szu-Han; Chang, Ting-Chang; Wu, Chi-Wei; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Luo, Hung-Ping; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:23:05Z |
Effect of Top Electrode Material on Resistive Switching Characteristics in MnO2 Nonvolatile Memory Devices
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Tsai, Yu-Ting; Chang, Ting-Chang; Lin, Chao-Cheng; Chiang, Lan-Shin; Chen, Shih-Cheng; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:21:54Z |
Asymmetric Carrier Conduction Mechanism by Tip Electric Field in WSiOX Resistance Switching Device
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Syu, Yong-En; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Geng-Wei; Chang, Kuan-Chang; Lou, Jyun-Hao; Tai, Ya-Hsiang; Tsai, Ming-Jinn; Wang, Ying-Lang; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:21:35Z |
Resistive switching characteristics of ytterbium oxide thin film for nonvolatile memory application
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Tseng, Hsueh-Chih; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Ting; Yang, Po-Chun; Huang, Hui-Chun; Gan, Der-Shin; Ho, New-Jin; Sze, Simon M.; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:21:35Z |
Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO(2) fluid treatment
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Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Wang, Chia-C.; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:21:32Z |
The Effect of Silicon Oxide Based RRAM with Tin Doping
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Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:21:29Z |
Silicon introduced effect on resistive switching characteristics of WO(X) thin films
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Syu, Yong-En; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Geng-Wei; Chang, Kuan-Chang; Tai, Ya-Hsiang; Tsai, Ming-Jinn; Wang, Ying-Lang; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:20:50Z |
Influence of Oxygen Partial Pressure on Resistance Random Access Memory Characteristics of Indium Gallium Zinc Oxide
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Chen, Min-Chen; Chang, Ting-Chang; Huang, Sheng-Yao; Chang, Guan-Chang; Chen, Shih-Cheng; Huang, Hui-Chun; Hu, Chih-Wei; Sze, Simon M.; Tsai, Tsung-Ming; Gan, Der-Shin; Yeh (Huang), Fon-Shan; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:17:44Z |
A fabrication of germanium nanocrystal embedded in silicon-oxygen-nitride layer
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Tu, Chun-Hao; Chang, Ting-Chang; Liu, Po-Tsun; Liu, Hsin-Chou; Weng, Chi-Feng; Shy, Jang-Hung; Tseng, Bae-Heng; Tseng, Tseung-Yuan; Sze, Simon M.; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:17:43Z |
Electrical enhancement of solid phase crystallized poly-Si thin-film transistors with fluorine ion implantation
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Tu, Chun-Hao; Chang, Ting- Chang; Liu, Po-Tsun; Chen, Chih-Hung; Yang, Che-Yu; Wu, Yung-Chun; Liu, Hsin-Chou; Chang, Li-Ting; Tsai, Chia-Chou; Sze, Simon M.; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:16:10Z |
Formation of germanium nanocrystals embedded in silicon-oxygen-nitride layer
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Tu, Chun-Hao; Chang, Ting-Chang; Liu, Po-Tsun; Liu, Hsin-Chou; Tsai, Chia-Chou; Chang, Li-Ting; Tseng, Tseung-Yuan; Sze, Simon M.; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:15:37Z |
Improved memory window for Ge nanocrystals embedded in SiON layer
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Tu, Chun-Hao; Chang, Ting-Chang; Liu, Po-Tsun; Liu, Hsin-Chou; Sze, Simon M.; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:15:11Z |
Formation of germanium nanocrystals embedded in a silicon-oxygen-nitride layer
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Tu, Chun-Hao; Chang, Ting-Chang; Liu, Po-Tsun; Weng, Chi-Feng; Liu, Hsin-Chou; Chang, Li-Ting; Lee, Sheng-Kai; Chen, Wei-Ren; Sze, Simon M.; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:14:39Z |
Improved performance of F-ions-implanted poly-Si thin-film transistors using solid phase crystallization and excimer laser crystallization
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Tu, Chun-Hao; Chang, Ting-Chang; Liu, Po-Tsun; Yang, Che-Yu; Feng, Li-Wei; Tsai, Chia-Chou; Chang, Li-Ting; Wu, Yung-Chun; Sze, Simon M.; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:13:22Z |
Formation of Ge nanocrystals using Si1.33Ge0.67O2 and Si2.67Ge1.33N2 film for nonvolatile memory application
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Chen, Wei-Ren; Chang, Ting-Chang; Hsieh, Yen-Ting; Sze, Simon M.; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:13:06Z |
Formation and nonvolatile memory effect of nickel-oxygen-silicon nanoparticles
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Chen, Wei-Ren; Chang, Ting-Chang; Yeh, Jui-Lung; Sze, Simon M.; Chang, Chun-Yen; Chen, Uei-Shin |
| 國立交通大學 |
2014-12-08T15:12:52Z |
Formation of Mo silicide nanodot memory by rapid thermal annealing dual electron-gun evaporated Mo-Si layer
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Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Chang, Chun-Yen; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:12:25Z |
Performance enhancement of excimer laser crystallized poly-Si thin film transistors with fluorine implantation technology
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Tu, Chun-Hao; Chang, Ting-Chang; Liu, Po-Tsun; Yang, Che-Yu; Feng, Li-Wei; Wu, Yung-Chun; Sze, Simon M.; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:12:18Z |
Formation of cobalt-silicide nanocrystals in Ge-doped dielectric layer for the application on nonvolatile memory
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Hu, Chih-Wei; Chang, Ting-Chang; Liu, Po-Tsun; Tu, Chun-Hao; Lee, Sheng-Kai; Sze, Simon M.; Chang, Chun-Yen; Chiou, Bi-Shiou; Tseng, Tseung-Yuan |
| 國立交通大學 |
2014-12-08T15:11:50Z |
Redox Reaction Switching Mechanism in RRAM Device With Pt/CoSiO(X)/TiN Structure
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Syu, Yong-En; Chang, Ting-Chang; Tsai, Tsung-Ming; Hung, Ya-Chi; Chang, Kuan-Chang; Tsai, Ming-Jinn; Kao, Ming-Jer; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:10:32Z |
Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reduction
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Lin, Chao-Cheng; Chang, Ting-; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang |
| 國立交通大學 |
2014-12-08T15:10:28Z |
Improvement of Charge-Storage Characteristics of Mo Nanocrystal Memory by Double-Layer Structure
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Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Feng, Li-Wen; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang |
| 國立交通大學 |
2014-12-08T15:10:28Z |
Enhancement of NiSi-Based Nanocrystal Formation by Incorporating Ge Elements for Nonvolatile Memory Devices
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chiang, Cheng-Neng; Lin, Chao-Cheng; Lee, Sheng-Wei; Chang, Chun-Yen; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:10:19Z |
Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment
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Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang |
| 國立交通大學 |
2014-12-08T15:10:01Z |
NiSiGe nanocrystals for nonvolatile memory devices
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Hu, Chih-Wei; Chang, Ting-; Tu, Chun-Hao; Chiang, Cheng-Neng; Lin, Chao-Cheng; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:10:01Z |
Improved reliability of Mo nanocrystal memory with ammonia plasma treatment
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Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang |
| 國立交通大學 |
2014-12-08T15:09:47Z |
Cobalt nanodots formed by annealing the CoSiO layer for the application of the nonvolatile memory
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Shueh, Pei-Kun; Lin, Chao-Cheng; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Min-Chen |
| 國立交通大學 |
2014-12-08T15:08:02Z |
Nitric Acid Oxidation of Si for the Tunneling Oxide Application on CoSi(2) Nanocrystals Nonvolatile Memory
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Yang-Dong; Lin, Chao-Cheng; Chen, Min-Chen; Lin, Jian-Yang; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:07:53Z |
High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO(2) Pellets for the Nonvolatile Memory Device Application
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Huang, Yu-Hao; Lin, Chao-Cheng; Chen, Min-Chen; Huang, Fon-Shan; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:07:53Z |
Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory
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Chen, Min-Chen; Chang, Ting-Chang; Huang, Sheng-Yao; Chen, Shih-Ching; Hu, Chih-Wei; Tsai, Chih-Tsung; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:07:23Z |
Charge storage characteristics of high density Mo nanocrystal embedded in silicon oxide and silicon nitride
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Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Shih-Ching; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang |
| 國立交通大學 |
2014-12-08T15:06:41Z |
Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films
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Chen, Min-Chen; Chang, Ting-Chang; Tsai, Chih-Tsung; Huang, Sheng-Yao; Chen, Shih-Ching; Hu, Chih-Wei; Sze, Simon M.; Tsai, Ming-Jinn |
| 國立成功大學 |
2014-09 |
Influence of Oxygen Concentration on Self-Compliance RRAM in Indium Oxide Film
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Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.; Tsai, Ming-Jinn; Zheng, Jin-Cheng; Bao, Ding-Hua |
| 國立成功大學 |
2014-06 |
Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory
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Zhang, Rui; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Huang, Syuan-Yong; Chen, Wen-Jen; Chen, Kai-Huang; Lou, Jen-Chung; Chen, Jung-Hui; Young, Tai-Fa; Chen, Min-Chen; Chen, Hsin-Lu; Liang, Shu-Ping; Syu, Yong-En; Sze, Simon M. |
| 國立成功大學 |
2014-04-14 |
Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors
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Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M. |
| 國立成功大學 |
2014-03-31 |
Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors
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Liu, Kuan-Hsien; Chang, Ting-Chang; Wu, Ming-Siou; Hung, Yi-Syuan; Hung, Pei-Hua; Hsieh, Tien-Yu; Chou, Wu-Ching; Chu, Ann-Kuo; Sze, Simon M.; Yeh, Bo-Liang |
| 國立成功大學 |
2014-02 |
Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory
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Chu, Tian-Jian; Tsai, Tsung-Ming; Chang, Ting-Chang; Chang, Kuan-Chang; Zhang, Rui; Chen, Kai-Huang; Chen, Jung-Hui; Young, Tai-Fa; Huang, Jen-Wei; Lou, Jen-Chung; Chen, Min-Chen; Huang, Syuan-Yong; Chen, Hsin-Lu; Syu, Yong-En; Bao, Dinghua; Sze, Simon M. |
| 國立成功大學 |
2014-01 |
Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment
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Chang, Kuan-Chang; Chen, Jung-Hui; Tsai, Tsung-Ming; Chang, Ting-Chang; Huang, Syuan-Yong; Zhang, Rui; Chen, Kai-Huang; Syu, Yong-En; Chang, Geng-Wei; Chu, Tian-Jian; Liu, Guan-Ru; Su, Yu-Ting; Chen, Min-Chen; Pan, Jhih-Hong; Liao, Kuo-Hsiao; Tai, Ya-Hsiang; Young, Tai-Fa; Sze, Simon M.; Ai, Chi-Fong; Wang, Min-Chuan; Huang, Jen-Wei |
| 國立成功大學 |
2013-12-21 |
Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory
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Zhang, Rui;Tsai, Tsung-Ming;Chang, Ting-Chang;Chang, Kuan-Chang;Chen, Kai-Huang;Lou, Jen-Chung;Young, Tai-Fa;Chen, Jung-Hui;Huang, Syuan-Yong;Chen, Min-Chen;Shih, Chih-Cheng;Chen, Hsin-Lu;Pan, Jhih-Hong;Tung, Cheng-Wei;Syu, Yong-En;Sze, Simon M. |
| 國立成功大學 |
2013-12-11 |
Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer
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Chang, Kuan-; Huang, Jen-wei; Chang, Ting-Chang; Tsai, Tsung-Ming; Chen, Kai-Huang; Young, Tai-Fa; Chen, Jung-Hui; Zhang, Rui; Lou, Jen-Chung; Huang, Syuan-Yong; Pan, Yin-Chih; Huang, Hui-Chun; Syu, Yong-En; Gan, Der-Shin; Bao, Ding-Hua; Sze, Simon M. |
| 國立成功大學 |
2013-11-21 |
High performance of graphene oxide-doped silicon oxide-based resistance random access memory
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Zhang, Rui; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Chen, Kai-Huang; Lou, Jen-Chung; Chen, Jung-Hui; Young, Tai-Fa; Shih, Chih-Cheng; Yang, Ya-Liang; Pan, Yin-Chih; Chu, Tian-Jian; Huang, Syuan-Yong; Pan, Chih-Hung; Su, Yu-Ting; Syu, Yong-En; Sze, Simon M. |
Showing items 161-210 of 238 (5 Page(s) Totally)
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