|
"sze simon m"的相關文件
顯示項目 171-220 / 238 (共5頁)
<< < 1 2 3 4 5 > >>
每頁顯示[10|25|50]項目
| 國立交通大學 |
2014-12-08T15:23:05Z |
Effect of Top Electrode Material on Resistive Switching Characteristics in MnO2 Nonvolatile Memory Devices
|
Tsai, Yu-Ting; Chang, Ting-Chang; Lin, Chao-Cheng; Chiang, Lan-Shin; Chen, Shih-Cheng; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:21:54Z |
Asymmetric Carrier Conduction Mechanism by Tip Electric Field in WSiOX Resistance Switching Device
|
Syu, Yong-En; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Geng-Wei; Chang, Kuan-Chang; Lou, Jyun-Hao; Tai, Ya-Hsiang; Tsai, Ming-Jinn; Wang, Ying-Lang; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:21:35Z |
Resistive switching characteristics of ytterbium oxide thin film for nonvolatile memory application
|
Tseng, Hsueh-Chih; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Ting; Yang, Po-Chun; Huang, Hui-Chun; Gan, Der-Shin; Ho, New-Jin; Sze, Simon M.; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:21:35Z |
Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO(2) fluid treatment
|
Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Wang, Chia-C.; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:21:32Z |
The Effect of Silicon Oxide Based RRAM with Tin Doping
|
Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:21:29Z |
Silicon introduced effect on resistive switching characteristics of WO(X) thin films
|
Syu, Yong-En; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Geng-Wei; Chang, Kuan-Chang; Tai, Ya-Hsiang; Tsai, Ming-Jinn; Wang, Ying-Lang; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:20:50Z |
Influence of Oxygen Partial Pressure on Resistance Random Access Memory Characteristics of Indium Gallium Zinc Oxide
|
Chen, Min-Chen; Chang, Ting-Chang; Huang, Sheng-Yao; Chang, Guan-Chang; Chen, Shih-Cheng; Huang, Hui-Chun; Hu, Chih-Wei; Sze, Simon M.; Tsai, Tsung-Ming; Gan, Der-Shin; Yeh (Huang), Fon-Shan; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:17:44Z |
A fabrication of germanium nanocrystal embedded in silicon-oxygen-nitride layer
|
Tu, Chun-Hao; Chang, Ting-Chang; Liu, Po-Tsun; Liu, Hsin-Chou; Weng, Chi-Feng; Shy, Jang-Hung; Tseng, Bae-Heng; Tseng, Tseung-Yuan; Sze, Simon M.; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:17:43Z |
Electrical enhancement of solid phase crystallized poly-Si thin-film transistors with fluorine ion implantation
|
Tu, Chun-Hao; Chang, Ting- Chang; Liu, Po-Tsun; Chen, Chih-Hung; Yang, Che-Yu; Wu, Yung-Chun; Liu, Hsin-Chou; Chang, Li-Ting; Tsai, Chia-Chou; Sze, Simon M.; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:16:10Z |
Formation of germanium nanocrystals embedded in silicon-oxygen-nitride layer
|
Tu, Chun-Hao; Chang, Ting-Chang; Liu, Po-Tsun; Liu, Hsin-Chou; Tsai, Chia-Chou; Chang, Li-Ting; Tseng, Tseung-Yuan; Sze, Simon M.; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:15:37Z |
Improved memory window for Ge nanocrystals embedded in SiON layer
|
Tu, Chun-Hao; Chang, Ting-Chang; Liu, Po-Tsun; Liu, Hsin-Chou; Sze, Simon M.; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:15:11Z |
Formation of germanium nanocrystals embedded in a silicon-oxygen-nitride layer
|
Tu, Chun-Hao; Chang, Ting-Chang; Liu, Po-Tsun; Weng, Chi-Feng; Liu, Hsin-Chou; Chang, Li-Ting; Lee, Sheng-Kai; Chen, Wei-Ren; Sze, Simon M.; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:14:39Z |
Improved performance of F-ions-implanted poly-Si thin-film transistors using solid phase crystallization and excimer laser crystallization
|
Tu, Chun-Hao; Chang, Ting-Chang; Liu, Po-Tsun; Yang, Che-Yu; Feng, Li-Wei; Tsai, Chia-Chou; Chang, Li-Ting; Wu, Yung-Chun; Sze, Simon M.; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:13:22Z |
Formation of Ge nanocrystals using Si1.33Ge0.67O2 and Si2.67Ge1.33N2 film for nonvolatile memory application
|
Chen, Wei-Ren; Chang, Ting-Chang; Hsieh, Yen-Ting; Sze, Simon M.; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:13:06Z |
Formation and nonvolatile memory effect of nickel-oxygen-silicon nanoparticles
|
Chen, Wei-Ren; Chang, Ting-Chang; Yeh, Jui-Lung; Sze, Simon M.; Chang, Chun-Yen; Chen, Uei-Shin |
| 國立交通大學 |
2014-12-08T15:12:52Z |
Formation of Mo silicide nanodot memory by rapid thermal annealing dual electron-gun evaporated Mo-Si layer
|
Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Chang, Chun-Yen; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:12:25Z |
Performance enhancement of excimer laser crystallized poly-Si thin film transistors with fluorine implantation technology
|
Tu, Chun-Hao; Chang, Ting-Chang; Liu, Po-Tsun; Yang, Che-Yu; Feng, Li-Wei; Wu, Yung-Chun; Sze, Simon M.; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:12:18Z |
Formation of cobalt-silicide nanocrystals in Ge-doped dielectric layer for the application on nonvolatile memory
|
Hu, Chih-Wei; Chang, Ting-Chang; Liu, Po-Tsun; Tu, Chun-Hao; Lee, Sheng-Kai; Sze, Simon M.; Chang, Chun-Yen; Chiou, Bi-Shiou; Tseng, Tseung-Yuan |
| 國立交通大學 |
2014-12-08T15:11:50Z |
Redox Reaction Switching Mechanism in RRAM Device With Pt/CoSiO(X)/TiN Structure
|
Syu, Yong-En; Chang, Ting-Chang; Tsai, Tsung-Ming; Hung, Ya-Chi; Chang, Kuan-Chang; Tsai, Ming-Jinn; Kao, Ming-Jer; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:10:32Z |
Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reduction
|
Lin, Chao-Cheng; Chang, Ting-; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang |
| 國立交通大學 |
2014-12-08T15:10:28Z |
Improvement of Charge-Storage Characteristics of Mo Nanocrystal Memory by Double-Layer Structure
|
Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Feng, Li-Wen; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang |
| 國立交通大學 |
2014-12-08T15:10:28Z |
Enhancement of NiSi-Based Nanocrystal Formation by Incorporating Ge Elements for Nonvolatile Memory Devices
|
Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chiang, Cheng-Neng; Lin, Chao-Cheng; Lee, Sheng-Wei; Chang, Chun-Yen; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:10:19Z |
Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment
|
Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang |
| 國立交通大學 |
2014-12-08T15:10:01Z |
NiSiGe nanocrystals for nonvolatile memory devices
|
Hu, Chih-Wei; Chang, Ting-; Tu, Chun-Hao; Chiang, Cheng-Neng; Lin, Chao-Cheng; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:10:01Z |
Improved reliability of Mo nanocrystal memory with ammonia plasma treatment
|
Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang |
| 國立交通大學 |
2014-12-08T15:09:47Z |
Cobalt nanodots formed by annealing the CoSiO layer for the application of the nonvolatile memory
|
Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Shueh, Pei-Kun; Lin, Chao-Cheng; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Min-Chen |
| 國立交通大學 |
2014-12-08T15:08:02Z |
Nitric Acid Oxidation of Si for the Tunneling Oxide Application on CoSi(2) Nanocrystals Nonvolatile Memory
|
Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Yang-Dong; Lin, Chao-Cheng; Chen, Min-Chen; Lin, Jian-Yang; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:07:53Z |
High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO(2) Pellets for the Nonvolatile Memory Device Application
|
Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Huang, Yu-Hao; Lin, Chao-Cheng; Chen, Min-Chen; Huang, Fon-Shan; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:07:53Z |
Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory
|
Chen, Min-Chen; Chang, Ting-Chang; Huang, Sheng-Yao; Chen, Shih-Ching; Hu, Chih-Wei; Tsai, Chih-Tsung; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:07:23Z |
Charge storage characteristics of high density Mo nanocrystal embedded in silicon oxide and silicon nitride
|
Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Shih-Ching; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang |
| 國立交通大學 |
2014-12-08T15:06:41Z |
Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films
|
Chen, Min-Chen; Chang, Ting-Chang; Tsai, Chih-Tsung; Huang, Sheng-Yao; Chen, Shih-Ching; Hu, Chih-Wei; Sze, Simon M.; Tsai, Ming-Jinn |
| 國立成功大學 |
2014-09 |
Influence of Oxygen Concentration on Self-Compliance RRAM in Indium Oxide Film
|
Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.; Tsai, Ming-Jinn; Zheng, Jin-Cheng; Bao, Ding-Hua |
| 國立成功大學 |
2014-06 |
Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory
|
Zhang, Rui; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Huang, Syuan-Yong; Chen, Wen-Jen; Chen, Kai-Huang; Lou, Jen-Chung; Chen, Jung-Hui; Young, Tai-Fa; Chen, Min-Chen; Chen, Hsin-Lu; Liang, Shu-Ping; Syu, Yong-En; Sze, Simon M. |
| 國立成功大學 |
2014-04-14 |
Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors
|
Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M. |
| 國立成功大學 |
2014-03-31 |
Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors
|
Liu, Kuan-Hsien; Chang, Ting-Chang; Wu, Ming-Siou; Hung, Yi-Syuan; Hung, Pei-Hua; Hsieh, Tien-Yu; Chou, Wu-Ching; Chu, Ann-Kuo; Sze, Simon M.; Yeh, Bo-Liang |
| 國立成功大學 |
2014-02 |
Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory
|
Chu, Tian-Jian; Tsai, Tsung-Ming; Chang, Ting-Chang; Chang, Kuan-Chang; Zhang, Rui; Chen, Kai-Huang; Chen, Jung-Hui; Young, Tai-Fa; Huang, Jen-Wei; Lou, Jen-Chung; Chen, Min-Chen; Huang, Syuan-Yong; Chen, Hsin-Lu; Syu, Yong-En; Bao, Dinghua; Sze, Simon M. |
| 國立成功大學 |
2014-01 |
Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment
|
Chang, Kuan-Chang; Chen, Jung-Hui; Tsai, Tsung-Ming; Chang, Ting-Chang; Huang, Syuan-Yong; Zhang, Rui; Chen, Kai-Huang; Syu, Yong-En; Chang, Geng-Wei; Chu, Tian-Jian; Liu, Guan-Ru; Su, Yu-Ting; Chen, Min-Chen; Pan, Jhih-Hong; Liao, Kuo-Hsiao; Tai, Ya-Hsiang; Young, Tai-Fa; Sze, Simon M.; Ai, Chi-Fong; Wang, Min-Chuan; Huang, Jen-Wei |
| 國立成功大學 |
2013-12-21 |
Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory
|
Zhang, Rui;Tsai, Tsung-Ming;Chang, Ting-Chang;Chang, Kuan-Chang;Chen, Kai-Huang;Lou, Jen-Chung;Young, Tai-Fa;Chen, Jung-Hui;Huang, Syuan-Yong;Chen, Min-Chen;Shih, Chih-Cheng;Chen, Hsin-Lu;Pan, Jhih-Hong;Tung, Cheng-Wei;Syu, Yong-En;Sze, Simon M. |
| 國立成功大學 |
2013-12-11 |
Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer
|
Chang, Kuan-; Huang, Jen-wei; Chang, Ting-Chang; Tsai, Tsung-Ming; Chen, Kai-Huang; Young, Tai-Fa; Chen, Jung-Hui; Zhang, Rui; Lou, Jen-Chung; Huang, Syuan-Yong; Pan, Yin-Chih; Huang, Hui-Chun; Syu, Yong-En; Gan, Der-Shin; Bao, Ding-Hua; Sze, Simon M. |
| 國立成功大學 |
2013-11-21 |
High performance of graphene oxide-doped silicon oxide-based resistance random access memory
|
Zhang, Rui; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Chen, Kai-Huang; Lou, Jen-Chung; Chen, Jung-Hui; Young, Tai-Fa; Shih, Chih-Cheng; Yang, Ya-Liang; Pan, Yin-Chih; Chu, Tian-Jian; Huang, Syuan-Yong; Pan, Chih-Hung; Su, Yu-Ting; Syu, Yong-En; Sze, Simon M. |
| 國立成功大學 |
2013-10-14 |
Characteristics of hafnium oxide resistance random access memory with different setting compliance current
|
Su, Yu-Ting; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Chen, Kai-Huang; Tseng, Bae-Heng; Shih, Chih-Cheng; Yang, Ya-Liang; Chen, Min-Chen; Chu, Tian-Jian; Pan, Chih-Hung; Syu, Yong-En; Sze, Simon M. |
| 國立成功大學 |
2013-09-02 |
Low power consumption resistance random access memory with Pt/InOx/TiN structure
|
Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.; Tsai, Ming-Jinn |
| 國立成功大學 |
2013-08-19 |
Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process
|
Chang, Kuan-Chang; Tsai, Tsung-Ming; Zhang, Rui; Chang, Ting-Chang; Chen, Kai-Huang; Chen, Jung-Hui; Young, Tai-Fa; Lou, J. C.; Chu, Tian-Jian; Shih, Chih-Cheng; Pan, Jhih-Hong; Su, Yu-Ting; Syu, Yong-En; Tung, Cheng-Wei; Chen, Min-Chen; Wu, Jia-Jie; Hu, Ying; Sze, Simon M. |
| 國立成功大學 |
2013-07-22 |
Enhancement of the stability of resistive switching characteristics by conduction path reconstruction
|
Huang, Jheng-Jie; Chang, Ting-Chang; Yu, Chih-Cheng; Huang, Hui-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Yang, Jyun-Bao; Sze, Simon M.; Gan, Der-Shin; Chu, Ann-Kuo; Lin, Jian-Yang; Tsai, Ming-Jinn |
| 國立成功大學 |
2013-07 |
Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device
|
Syu, Yong-En; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Chen, Min-Chen; Yang, Ya-Liang; Shih, Chih-Cheng; Chu, Tian-Jian; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M. |
| 國立成功大學 |
2013-07 |
Impact of Electroforming Current on Self-Compliance Resistive Switching in an ITO/Gd:SiOx/TiN Structure
|
Tseng, Hsueh-Chih; Chang, Ting-Chang; Wu, Yi-Chun; Wu, Sei-Wei; Huang, Jheng-Jie; Chen, Yu-Ting; Yang, Jyun-Bao; Lin, Tzu-Ping; Sze, Simon. M.; Tsai, Ming-Jinn; Wang, Ying-Lang; Chu, Ann-Kuo |
| 國立成功大學 |
2013-06-24 |
Insertion of a Si layer to reduce operation current for resistive random access memory applications
|
Chen, Yu-Ting; Chang, Ting-Chang; Peng, Han-Kuang; Tseng, Hsueh-Chih; Huang, Jheng-Jie; Yang, Jyun-Bao; Chu, Ann-Kuo; Young, Tai-Fa; Sze, Simon M. |
| 國立成功大學 |
2013-06-24 |
Performance and characteristics of double layer porous silicon oxide resistance random access memory
|
Tsai, Tsung-Ming; Chang, Kuan-Chang; Zhang, Rui; Chang, Ting-Chang; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Tseng, Bae-Heng; Shih, Chih-Cheng; Pan, Yin-Chih; Chen, Min-Chen; Pan, Jhih-Hong; Syu, Yong-En; Sze, Simon M. |
| 國立成功大學 |
2013-05-20 |
The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory
|
Huang, Jen-Wei; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, J. C.; Young, Tai-Fa; Chen, Jung-Hui; Chen, Hsin-Lu; Pan, Yin-Chih; Huang, Xuan; Zhang, Fengyan; Syu, Yong-En; Sze, Simon M. |
| 國立成功大學 |
2013-05 |
Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment
|
Chang, Kuan-Chang; Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Shih, Chih-Cheng; Chu, Tian-Jian; Chen, Jian-Yu; Su, Yu-Ting; Jiang, Jhao-Ping; Chen, Kai-Huang; Huang, Hui-Chun; Syu, Yong-En; Gan, Der-Shin; Sze, Simon M. |
顯示項目 171-220 / 238 (共5頁)
<< < 1 2 3 4 5 > >>
每頁顯示[10|25|50]項目
|
