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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Institution Date Title Author
國立交通大學 2019-04-02T05:59:24Z Growth and electrical characterization of Si delta-doped GaInP by low pressure metalorganic chemical vapor deposition Wang, CJ; Feng, MS; Chan, SH; Chang, CY; Wu, JH; Sze, SM
國立交通大學 2019-04-02T05:59:13Z SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION WANG, CJ; WU, JW; CHAN, SH; CHANG, CY; SZE, SM; FENG, MS
國立交通大學 2019-04-02T05:58:33Z Present and future trends in device science and technologies - Preface Shur, MS; Sze, SM; Xu, JM
國立交通大學 2014-12-08T15:47:36Z Epitaxial growth of the GaN film by remote-plasma metalorganic chemical vapor deposition Lai, WC; Chang, CY; Yokoyama, M; Guo, JD; Tsang, JS; Chan, SH; Bow, JS; Wei, SC; Hong, RH; Sze, SM
國立交通大學 2014-12-08T15:46:31Z Enhancing the oxygen plasma resistance of low-k methylsilsesquioxane by H-2 plasma treatment Liu, PT; Chang, TC; Mor, YS; Sze, SM
國立交通大學 2014-12-08T15:46:20Z Effects of hydrogen on electrical and chemical properties of low-k hydrogen silsesquioxane as an intermetal dielectric for nonetchback processes Chang, TC; Liu, PT; Shih, FY; Sze, SM
國立交通大學 2014-12-08T15:46:15Z Effects of H-2 plasma treatment on low dielectric constant methylsilsesquioxane Chang, TC; Liu, PT; Mei, YJ; Mor, YS; Perng, TH; Yang, YL; Sze, SM
國立交通大學 2014-12-08T15:46:11Z The novel improvement of low dielectric constant methylsilsesquioxane by N2O plasma treatment Chang, TC; Liu, PT; Mor, YS; Sze, SM; Yang, YL; Feng, MS; Pan, FM; Dai, BT; Chang, CY
國立交通大學 2014-12-08T15:46:07Z Effectively blocking copper diffusion at low-k hydrogen silsesquioxane/copper interface Liu, PT; Chang, TC; Yang, YL; Cheng, YF; Shih, FY; Lee, JK; Tsai, E; Sze, SM
國立交通大學 2014-12-08T15:46:05Z The novel precleaning treatment for selective tungsten chemical vapor deposition Chang, TC; Mor, YS; Liu, PT; Sze, SM; Yang, YL; Tsai, MS; Chang, CY
國立交通大學 2014-12-08T15:45:53Z Reliability of multistacked chemical vapor deposited Ti/TiN structure as the diffusion barrier in ultralarge scale integrated metallization Liu, PT; Chang, TC; Hu, JC; Yang, YL; Sze, SM
國立交通大學 2014-12-08T15:45:43Z Enhancement of barrier properties in chemical vapor deposited TiN employing multi-stacked Ti/TiN structure Chang, TC; Liu, PT; Yang, YL; Hu, JC; Sze, SM
國立交通大學 2014-12-08T15:45:40Z Improvement on intrinsic electrical properties of low-k hydrogen silsesquioxane/copper interconnects employing deuterium plasma treatment Liu, PT; Chang, TC; Yang, YL; Cheng, YF; Lee, JK; Shih, FY; Tsai, E; Chen, G; Sze, SM
國立交通大學 2014-12-08T15:45:26Z Characterization of NH3 plasma-treated Ba0.7Sr0.3TiO3 thin films Wuu, DS; Horng, RH; Liao, FC; Leu, CC; Huang, TY; Sze, SM; Chen, HY; Chang, CY
國立交通大學 2014-12-08T15:45:26Z Effects of O-2 plasma treatment on the electric and dielectric characteristics of Ba0.7Sr0.3TiO3 thin films Leu, CC; Chan, SH; Chen, HY; Horng, RH; Wuu, DS; Wu, LH; Huang, TY; Chang, CY; Sze, SM
國立交通大學 2014-12-08T15:44:50Z Effects of NH3-plasma nitridation on the electrical characterizations of low-k hydrogen silsesquioxane with copper interconnects Liu, PT; Chang, TC; Yang, YL; Cheng, YF; Sze, SM
國立交通大學 2014-12-08T15:44:42Z Improvement of post-chemical mechanical planarization characteristics on organic low k methylsilsesquioxane as intermetal dielectric Liu, PT; Chang, TC; Huang, MC; Yang, YL; Mor, YS; Tsai, MS; Chung, H; Hou, J; Sze, SM
國立交通大學 2014-12-08T15:44:23Z Energy and coordinate dependent effective mass and confined electron states in quantum dots Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM
國立交通大學 2014-12-08T15:44:15Z 1.55-mu m and infrared-band photoresponsivity of a Schottky barrier porous silicon photodetector Lee, MK; Chu, CH; Wang, YH; Sze, SM
國立交通大學 2014-12-08T15:43:55Z Elimination of dielectric degradation for chemical-mechanical planarization of low-k hydrogen silisesquioxane Chang, TC; Liu, PT; Tsai, TM; Yeh, FS; Tseng, TY; Tsai, MS; Chen, BC; Yang, YL; Sze, SM
國立交通大學 2014-12-08T15:43:42Z Highly reliable chemical-mechanical polishing process for organic low-k methylsilsesquioxane Liu, PT; Chang, TC; Huang, MC; Tsai, MS; Sze, SM
國立交通大學 2014-12-08T15:43:18Z Electron energy level calculations for cylindrical narrow gap semiconductor quantum dot Li, YM; Liu, JL; Voskoboynikov, O; Lee, CP; Sze, SM
國立交通大學 2014-12-08T15:43:16Z Enhancing the resistance of low-k hydrogen silsesquioxane (HSQ) to wet stripper damage Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM
國立交通大學 2014-12-08T15:43:16Z The effect of ammonia plasma treatment on low-k methyl-hybrido-silsesquioxane against photoresist stripping damage Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM
國立交通大學 2014-12-08T15:43:16Z Improvement of low dielectric constant methylsilsesquioxane by boron implantation treatment Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Sze, SM; Mei, YJ

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