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Showing items 1-10 of 83 (9 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:59:24Z |
Growth and electrical characterization of Si delta-doped GaInP by low pressure metalorganic chemical vapor deposition
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Wang, CJ; Feng, MS; Chan, SH; Chang, CY; Wu, JH; Sze, SM |
| 國立交通大學 |
2019-04-02T05:59:13Z |
SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
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WANG, CJ; WU, JW; CHAN, SH; CHANG, CY; SZE, SM; FENG, MS |
| 國立交通大學 |
2019-04-02T05:58:33Z |
Present and future trends in device science and technologies - Preface
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Shur, MS; Sze, SM; Xu, JM |
| 國立交通大學 |
2014-12-08T15:47:36Z |
Epitaxial growth of the GaN film by remote-plasma metalorganic chemical vapor deposition
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Lai, WC; Chang, CY; Yokoyama, M; Guo, JD; Tsang, JS; Chan, SH; Bow, JS; Wei, SC; Hong, RH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:46:31Z |
Enhancing the oxygen plasma resistance of low-k methylsilsesquioxane by H-2 plasma treatment
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Liu, PT; Chang, TC; Mor, YS; Sze, SM |
| 國立交通大學 |
2014-12-08T15:46:20Z |
Effects of hydrogen on electrical and chemical properties of low-k hydrogen silsesquioxane as an intermetal dielectric for nonetchback processes
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Chang, TC; Liu, PT; Shih, FY; Sze, SM |
| 國立交通大學 |
2014-12-08T15:46:15Z |
Effects of H-2 plasma treatment on low dielectric constant methylsilsesquioxane
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Chang, TC; Liu, PT; Mei, YJ; Mor, YS; Perng, TH; Yang, YL; Sze, SM |
| 國立交通大學 |
2014-12-08T15:46:11Z |
The novel improvement of low dielectric constant methylsilsesquioxane by N2O plasma treatment
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Chang, TC; Liu, PT; Mor, YS; Sze, SM; Yang, YL; Feng, MS; Pan, FM; Dai, BT; Chang, CY |
| 國立交通大學 |
2014-12-08T15:46:07Z |
Effectively blocking copper diffusion at low-k hydrogen silsesquioxane/copper interface
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Liu, PT; Chang, TC; Yang, YL; Cheng, YF; Shih, FY; Lee, JK; Tsai, E; Sze, SM |
| 國立交通大學 |
2014-12-08T15:46:05Z |
The novel precleaning treatment for selective tungsten chemical vapor deposition
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Chang, TC; Mor, YS; Liu, PT; Sze, SM; Yang, YL; Tsai, MS; Chang, CY |
Showing items 1-10 of 83 (9 Page(s) Totally)
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