|
"sze sm"的相關文件
顯示項目 11-60 / 83 (共2頁)
1 2 > >>
每頁顯示[10|25|50]項目
| 國立交通大學 |
2014-12-08T15:45:53Z |
Reliability of multistacked chemical vapor deposited Ti/TiN structure as the diffusion barrier in ultralarge scale integrated metallization
|
Liu, PT; Chang, TC; Hu, JC; Yang, YL; Sze, SM |
| 國立交通大學 |
2014-12-08T15:45:43Z |
Enhancement of barrier properties in chemical vapor deposited TiN employing multi-stacked Ti/TiN structure
|
Chang, TC; Liu, PT; Yang, YL; Hu, JC; Sze, SM |
| 國立交通大學 |
2014-12-08T15:45:40Z |
Improvement on intrinsic electrical properties of low-k hydrogen silsesquioxane/copper interconnects employing deuterium plasma treatment
|
Liu, PT; Chang, TC; Yang, YL; Cheng, YF; Lee, JK; Shih, FY; Tsai, E; Chen, G; Sze, SM |
| 國立交通大學 |
2014-12-08T15:45:26Z |
Characterization of NH3 plasma-treated Ba0.7Sr0.3TiO3 thin films
|
Wuu, DS; Horng, RH; Liao, FC; Leu, CC; Huang, TY; Sze, SM; Chen, HY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:45:26Z |
Effects of O-2 plasma treatment on the electric and dielectric characteristics of Ba0.7Sr0.3TiO3 thin films
|
Leu, CC; Chan, SH; Chen, HY; Horng, RH; Wuu, DS; Wu, LH; Huang, TY; Chang, CY; Sze, SM |
| 國立交通大學 |
2014-12-08T15:44:50Z |
Effects of NH3-plasma nitridation on the electrical characterizations of low-k hydrogen silsesquioxane with copper interconnects
|
Liu, PT; Chang, TC; Yang, YL; Cheng, YF; Sze, SM |
| 國立交通大學 |
2014-12-08T15:44:42Z |
Improvement of post-chemical mechanical planarization characteristics on organic low k methylsilsesquioxane as intermetal dielectric
|
Liu, PT; Chang, TC; Huang, MC; Yang, YL; Mor, YS; Tsai, MS; Chung, H; Hou, J; Sze, SM |
| 國立交通大學 |
2014-12-08T15:44:23Z |
Energy and coordinate dependent effective mass and confined electron states in quantum dots
|
Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM |
| 國立交通大學 |
2014-12-08T15:44:15Z |
1.55-mu m and infrared-band photoresponsivity of a Schottky barrier porous silicon photodetector
|
Lee, MK; Chu, CH; Wang, YH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:55Z |
Elimination of dielectric degradation for chemical-mechanical planarization of low-k hydrogen silisesquioxane
|
Chang, TC; Liu, PT; Tsai, TM; Yeh, FS; Tseng, TY; Tsai, MS; Chen, BC; Yang, YL; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:42Z |
Highly reliable chemical-mechanical polishing process for organic low-k methylsilsesquioxane
|
Liu, PT; Chang, TC; Huang, MC; Tsai, MS; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:18Z |
Electron energy level calculations for cylindrical narrow gap semiconductor quantum dot
|
Li, YM; Liu, JL; Voskoboynikov, O; Lee, CP; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:16Z |
Enhancing the resistance of low-k hydrogen silsesquioxane (HSQ) to wet stripper damage
|
Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:16Z |
The effect of ammonia plasma treatment on low-k methyl-hybrido-silsesquioxane against photoresist stripping damage
|
Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:16Z |
Improvement of low dielectric constant methylsilsesquioxane by boron implantation treatment
|
Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Sze, SM; Mei, YJ |
| 國立交通大學 |
2014-12-08T15:43:13Z |
Computer simulation of electron energy levels for different shape InAs/GaAs semiconductor quantum dots
|
Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:11Z |
Effectiveness of NH3 plasma treatment in preventing wet stripper damage to low-k hydrogen silsesquioxane (HSQ)
|
Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:08Z |
Electron energy state dependence on the shape and size of semiconductor quantum dots
|
Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM; Tretyak, O |
| 國立交通大學 |
2014-12-08T15:43:08Z |
A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices
|
Li, YM; Liu, JL; Chao, TS; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:58Z |
A practical implementation of parallel dynamic load balancing for adaptive computing in VLSI device simulation
|
Li, Y; Sze, SM; Chao, TS |
| 國立交通大學 |
2014-12-08T15:42:48Z |
Ambipolar Schottky-barrier TFTs
|
Lin, HC; Yeh, KL; Huang, TY; Huang, RG; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:46Z |
Effective strategy for porous organosilicate to suppress oxygen ashing damage
|
Liu, PT; Chang, TC; Mor, YS; Chen, CW; Tsai, TM; Chu, CJ; Pan, FM; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:33Z |
Effect of shape and size on electron transition energies of InAs semiconductor quantum dots
|
Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM; Tretyak, O |
| 國立交通大學 |
2014-12-08T15:42:32Z |
Preventing dielectric damage of low-k organic siloxane by passivation treatment
|
Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Pan, FM; Wu, WF; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:29Z |
A computational method for energy level spin splitting simulation in InAs/GaAs semiconductor quantum dots
|
Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM; Tretyak, O |
| 國立交通大學 |
2014-12-08T15:42:20Z |
Application of field-induced source/drain Schottky metal-oxide-semiconductor to fin-like body field-effect transistor
|
Lin, HC; Wang, MF; Hou, FJ; Liu, JT; Huang, TY; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:15Z |
Eliminating dielectric degradation of low-k organosilicate glass by trimethylchlorosilane treatment
|
Chang, TC; Liu, PT; Mor, YS; Tsai, TM; Chen, CW; Mei, YJ; Pan, FM; Wu, WF; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:14Z |
Effective repair to ultra-low-k dielectric material (k-2.0) by hexamethyidisilazane treatment
|
Mor, YS; Chang, TC; Liu, PT; Tsai, TM; Chen, CW; Yan, ST; Chu, CJ; Wu, WF; Pan, FM; Lur, W; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:13Z |
Characterization of porous silicate for ultra-low k dielectric application
|
Liu, PT; Chang, TC; Hsu, KC; Tseng, TY; Chen, LM; Wang, CJ; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:10Z |
A domain partition approach to parallel adaptive simulation of dynamic threshold voltage MOSFET
|
Li, YM; Chao, TS; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:08Z |
Recovering dielectric loss of low dielectric constant organic siloxane during the photoresist removal process
|
Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:08Z |
Calculation of induced electron states in three-dimensional semiconductor artificial molecules
|
Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:08Z |
Numerical simulation of quantum effects in high-k gate dielectric MOS structures using quantum mechanical models
|
Li, YM; Lee, JW; Tang, TW; Chao, TS; Lei, TF; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:07Z |
Electron energy state spin-splitting in 3D cylindrical semiconductor quantum dots
|
Li, Y; Voskoboynikov; Lee, CP; Sze, SM; Tretyak, O |
| 國立交通大學 |
2014-12-08T15:41:53Z |
Trimethylchlorosilane treatment of ultralow dielectric constant material after photoresist removal processing
|
Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Chu, CJ; Pan, FM; Lur, W; Sze, SM |
| 國立交通大學 |
2014-12-08T15:41:21Z |
Electrical transport phenomena in aromatic hydrocarbon polymer
|
Liu, PT; Chang, TC; Yan, ST; Li, CH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:41:11Z |
Optimization of the anti-punch-through implant for electrostatic discharge protection circuit design
|
Li, YM; Lee, JW; Sze, SM |
| 國立交通大學 |
2014-12-08T15:41:07Z |
Moisture-induced material instability of porous organosilicate glass
|
Chang, TC; Chen, CW; Liu, PT; Mor, YS; Tsai, HM; Tsai, TM; Yan, ST; Tu, CH; Tseng, TY; Sze, SM |
| 國立交通大學 |
2014-12-08T15:40:46Z |
Dependence of energy gap on magnetic field in semiconductor nano-scale quantum rings
|
Li, YM; Lu, HM; Voskoboynikov, O; Lee, CP; Sze, SM |
| 國立交通大學 |
2014-12-08T15:40:10Z |
Special issue on nanoelectronics and nanoscale processing
|
Sheu, B; Wu, PCY; Sze, SM |
| 國立交通大學 |
2014-12-08T15:40:06Z |
Dielectric characteristics of low-permittivity silicate using electron beam direct patterning for intermetal dielectric applications
|
Liu, PT; Chang, TC; Tsai, TM; Lin, ZW; Chen, CW; Chen, BC; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:54Z |
A method for fabricating a superior oxide/nitride/oxide gate stack
|
Chang, TC; Yan, ST; Liu, PT; Wang, MC; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:53Z |
Quasi-superlattice storage - A concept of multilevel charge storage
|
Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, HH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:46Z |
A novel approach of fabricating germanium nanocrystals for nonvolatile memory application
|
Chang, TC; Yan, ST; Liu, PT; Chen, CW; Lin, SH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:46Z |
A novel distributed charge storage element fabricated by the oxidation of amorphous silicon carbide
|
Chang, TC; Yan, ST; Chen, YT; Liu, PT; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:45Z |
Study on SONOS nonvolatile memory technology using high-density plasma CVD silicon nitride
|
Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, YC; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:42Z |
Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applications
|
Chang, TC; Yan, ST; Liu, R; Lin, ZW; Aoki, H; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:27Z |
Memory effect of oxide/SiC : O/oxide sandwiched structures
|
Chang, TC; Yan, ST; Yang, FM; Liu, PT; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:21Z |
A distributed charge storage with GeO2 nanodots
|
Chang, TC; Yan, ST; Hsu, CH; Tang, MT; Lee, JF; Tai, YH; Liu, PT; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:16Z |
Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application
|
Chang, TC; Tsai, TM; Liu, PT; Yan, ST; Chang, YC; Aoki, H; Sze, SM; Tseng, TY |
顯示項目 11-60 / 83 (共2頁)
1 2 > >>
每頁顯示[10|25|50]項目
|
