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Showing items 21-45 of 83 (4 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:43:42Z |
Highly reliable chemical-mechanical polishing process for organic low-k methylsilsesquioxane
|
Liu, PT; Chang, TC; Huang, MC; Tsai, MS; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:18Z |
Electron energy level calculations for cylindrical narrow gap semiconductor quantum dot
|
Li, YM; Liu, JL; Voskoboynikov, O; Lee, CP; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:16Z |
Enhancing the resistance of low-k hydrogen silsesquioxane (HSQ) to wet stripper damage
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Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:16Z |
The effect of ammonia plasma treatment on low-k methyl-hybrido-silsesquioxane against photoresist stripping damage
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Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:16Z |
Improvement of low dielectric constant methylsilsesquioxane by boron implantation treatment
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Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Sze, SM; Mei, YJ |
| 國立交通大學 |
2014-12-08T15:43:13Z |
Computer simulation of electron energy levels for different shape InAs/GaAs semiconductor quantum dots
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Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:11Z |
Effectiveness of NH3 plasma treatment in preventing wet stripper damage to low-k hydrogen silsesquioxane (HSQ)
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Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:08Z |
Electron energy state dependence on the shape and size of semiconductor quantum dots
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Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM; Tretyak, O |
| 國立交通大學 |
2014-12-08T15:43:08Z |
A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices
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Li, YM; Liu, JL; Chao, TS; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:58Z |
A practical implementation of parallel dynamic load balancing for adaptive computing in VLSI device simulation
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Li, Y; Sze, SM; Chao, TS |
| 國立交通大學 |
2014-12-08T15:42:48Z |
Ambipolar Schottky-barrier TFTs
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Lin, HC; Yeh, KL; Huang, TY; Huang, RG; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:46Z |
Effective strategy for porous organosilicate to suppress oxygen ashing damage
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Liu, PT; Chang, TC; Mor, YS; Chen, CW; Tsai, TM; Chu, CJ; Pan, FM; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:33Z |
Effect of shape and size on electron transition energies of InAs semiconductor quantum dots
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Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM; Tretyak, O |
| 國立交通大學 |
2014-12-08T15:42:32Z |
Preventing dielectric damage of low-k organic siloxane by passivation treatment
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Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Pan, FM; Wu, WF; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:29Z |
A computational method for energy level spin splitting simulation in InAs/GaAs semiconductor quantum dots
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Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM; Tretyak, O |
| 國立交通大學 |
2014-12-08T15:42:20Z |
Application of field-induced source/drain Schottky metal-oxide-semiconductor to fin-like body field-effect transistor
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Lin, HC; Wang, MF; Hou, FJ; Liu, JT; Huang, TY; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:15Z |
Eliminating dielectric degradation of low-k organosilicate glass by trimethylchlorosilane treatment
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Chang, TC; Liu, PT; Mor, YS; Tsai, TM; Chen, CW; Mei, YJ; Pan, FM; Wu, WF; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:14Z |
Effective repair to ultra-low-k dielectric material (k-2.0) by hexamethyidisilazane treatment
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Mor, YS; Chang, TC; Liu, PT; Tsai, TM; Chen, CW; Yan, ST; Chu, CJ; Wu, WF; Pan, FM; Lur, W; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:13Z |
Characterization of porous silicate for ultra-low k dielectric application
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Liu, PT; Chang, TC; Hsu, KC; Tseng, TY; Chen, LM; Wang, CJ; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:10Z |
A domain partition approach to parallel adaptive simulation of dynamic threshold voltage MOSFET
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Li, YM; Chao, TS; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:08Z |
Recovering dielectric loss of low dielectric constant organic siloxane during the photoresist removal process
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Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:08Z |
Calculation of induced electron states in three-dimensional semiconductor artificial molecules
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Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:08Z |
Numerical simulation of quantum effects in high-k gate dielectric MOS structures using quantum mechanical models
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Li, YM; Lee, JW; Tang, TW; Chao, TS; Lei, TF; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:07Z |
Electron energy state spin-splitting in 3D cylindrical semiconductor quantum dots
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Li, Y; Voskoboynikov; Lee, CP; Sze, SM; Tretyak, O |
| 國立交通大學 |
2014-12-08T15:41:53Z |
Trimethylchlorosilane treatment of ultralow dielectric constant material after photoresist removal processing
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Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Chu, CJ; Pan, FM; Lur, W; Sze, SM |
Showing items 21-45 of 83 (4 Page(s) Totally)
1 2 3 4 > >>
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