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Showing items 56-80 of 83 (4 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:39:45Z |
Study on SONOS nonvolatile memory technology using high-density plasma CVD silicon nitride
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Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, YC; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:42Z |
Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applications
|
Chang, TC; Yan, ST; Liu, R; Lin, ZW; Aoki, H; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:27Z |
Memory effect of oxide/SiC : O/oxide sandwiched structures
|
Chang, TC; Yan, ST; Yang, FM; Liu, PT; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:21Z |
A distributed charge storage with GeO2 nanodots
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Chang, TC; Yan, ST; Hsu, CH; Tang, MT; Lee, JF; Tai, YH; Liu, PT; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:16Z |
Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application
|
Chang, TC; Tsai, TM; Liu, PT; Yan, ST; Chang, YC; Aoki, H; Sze, SM; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:39:12Z |
Leakage behavior of the quasi-superlattice stack for multilevel charge storage
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Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, HH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:38:58Z |
Memory effect of oxide/SiC : O/oxide sandwiched structures" (vol 84, pg 2094, 2004)
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Chang, TC; Yan, ST; Yang, FM; Liu, PT; Sze, SM |
| 國立交通大學 |
2014-12-08T15:38:48Z |
Quasisuperlattice storage: A concept of multilevel charge storage
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Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, HH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:37:17Z |
Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applications (Vol 447, pg 516, 2004)
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Chang, TC; Yan, ST; Liu, PT; Lin, ZW; Aoki, H; Sze, SM |
| 國立交通大學 |
2014-12-08T15:37:01Z |
Memory effect of oxide/oxygen-incorporated silicon carbide/oxide sandwiched structure
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Chang, TC; Liu, PT; Yan, ST; Yang, FM; Sze, SM |
| 國立交通大學 |
2014-12-08T15:36:06Z |
Electron charging and discharging effects of tungsten nanocrystals embedded in silicon dioxide for low-voltage nonvolatile memory technology
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Chang, TC; Liu, PT; Yan, ST; Sze, SM |
| 國立交通大學 |
2014-12-08T15:27:04Z |
High-performance integration of copper interconnects with low-k hydrogen silsesquioxane employing deuterium plasma treatment
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Liu, PT; Chang, TC; Yang, YL; Cheng, YF; Lee, JK; Shih, FY; Tsai, E; Chen, G; Sze, SM |
| 國立交通大學 |
2014-12-08T15:26:53Z |
A computational efficient method for HBT intermodulation distortions and two-tone characteristics simulation
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Huang, KY; Li, YM; Lee, CP; Sze, SM |
| 國立交通大學 |
2014-12-08T15:25:43Z |
High performance and high reliability polysilicon thin-film transistors with multiple nano-wire channels
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Wu, YC; Chang, CY; Chang, TC; Liu, PT; Chen, CS; Tu, CH; Zan, HW; Tai, YH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:07:13Z |
DESIGN CONSIDERATIONS OF LOW-NOISE HIGH-EFFICIENCY SILICON IMPATT DIODES
|
SU, S; SZE, SM |
| 國立交通大學 |
2014-12-08T15:04:02Z |
EFFECT OF GE CONCENTRATION ON STATIC AND MICROWAVE PERFORMANCES IN GEXSI1-X HETEROJUNCTION BIPOLAR-TRANSISTORS UNDER HIGH-LEVEL INJECTION
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CHYAN, YF; SZE, SM; CHANG, CY; REIF, R |
| 國立交通大學 |
2014-12-08T15:04:01Z |
EFFECT OF INTERFACIAL OXIDE ON STATIC AND HIGH-FREQUENCY PERFORMANCE IN POLYEMITTER BIPOLAR-TRANSISTORS UNDER HIGH-LEVEL INJECTION
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CHYAN, YF; SZE, SM; CHANG, CY; REIF, R |
| 國立交通大學 |
2014-12-08T15:04:01Z |
TEMPERATURE INFLUENCE ON THE GENERALIZED EINSTEIN RELATION FOR DEGENERATE SEMICONDUCTORS WITH ARBITRARY BAND STRUCTURES
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CHYAN, YF; SZE, SM; CHANG, CY; LIAO, K; REIF, R |
| 國立交通大學 |
2014-12-08T15:03:51Z |
ANALYTICAL MODELING OF POLYCRYSTALLINE SILICON EMITTER BIPOLAR-TRANSISTORS UNDER HIGH-LEVEL INJECTION
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CHYAN, YF; CHANG, CY; SZE, SM; LIN, MJ; LIAO, K; REIF, R |
| 國立交通大學 |
2014-12-08T15:03:51Z |
HIGH-LEVEL INJECTION INFLUENCE ON THE HIGH-FREQUENCY PERFORMANCE OF POLYCRYSTALLINE SILICON EMITTER BIPOLAR-TRANSISTORS
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CHYAN, YF; SZE, SM; CHANG, CY; CHIUEH, HM; REIF, R |
| 國立交通大學 |
2014-12-08T15:03:49Z |
INFLUENCE OF METALORGANIC SOURCES ON THE COMPOSITION UNIFORMITY OF SELECTIVELY GROWN GAXIN1-XP
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CHAN, SH; CHANG, CY; SZE, SM |
| 國立交通大學 |
2014-12-08T15:03:44Z |
SELECTIVE EPITAXIAL-GROWTH OF GAINP BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION USING ETHYLDIMETHYLINDIUM AS IN-SOURCE
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CHAN, SH; SZE, SM; CHANG, CY; LEE, WI |
| 國立交通大學 |
2014-12-08T15:03:41Z |
INVESTIGATIONS ON THE COMPOSITIONAL NONUNIFORMITY OF SELECTIVELY GROWN GAXIN1-XP BY LP-MOCVD USING EDMI, TMI, TEG, AND TMG AS GROUP-III SOURCES
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CHAN, SH; CHANG, CY; SZE, SM |
| 國立交通大學 |
2014-12-08T15:03:40Z |
SELECTIVE EPITAXIAL-GROWTH OF GAINP BY LP-MOCVD USING ETHYLDIMETHYLINDIUM, TRIMETHYLINDIUM, TRIMETHYLGALLIUM AND TRIETHYLGALLIUM AS GROUP-III SOURCES
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CHAN, SH; SZE, SM; CHANG, CY; LEE, WI |
| 國立交通大學 |
2014-12-08T15:03:12Z |
SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
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WANG, CJ; WU, JW; CHAN, SH; CHANG, CY; SZE, SM; FENG, MS |
Showing items 56-80 of 83 (4 Page(s) Totally)
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