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Showing items 1-3 of 3 (1 Page(s) Totally)
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| 國立交通大學 |
2019-11-01 |
Effect of thermal annealing for W/beta-Ga2O3 Schottky diodes up to 600 degrees C
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Pearton, Stephen J.; Liao, Yu-Te; Tadjer, Marko; Chen, Yen-Ting; Gila, Brent P.; Ren, Fan; Xian, Minghan; Fares, Chaker |
| 國立交通大學 |
2019-10-05T00:09:47Z |
DC and dynamic switching characteristics of field-plated vertical geometry beta-Ga2O3 rectifiers
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Yang, Jiancheng; Carey, Patrick; Ren, Fan; Chen, Yen-Ting; Liao, Y.; Chang, Chin-Wei; Lin, Jenshan; Tadjer, Marko; Pearton, S. J.; Smith, David J.; Kuramata, Akito |
| 國立交通大學 |
2019-04-02T06:00:32Z |
Switching Behavior and Forward Bias Degradation of 700V, 0.2A, beta-Ga2O3 Vertical Geometry Rectifiers
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Yang, Jiancheng; Fares, Chaker; Ren, Fan; Chen, Yen-Ting; Liao, Yu-Te; Chang, Chin-Wei; Lin, Jenshan; Tadjer, Marko; Smith, David J.; Pearton, S. J.; Kuramata, Akito |
Showing items 1-3 of 3 (1 Page(s) Totally)
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