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| 臺大學術典藏 |
2018-09-10T05:18:35Z |
Carrier localization effect in polarized InGaN multiple quantum wells
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Kazlauskas, K.; Tamulaitis, G.; Mickevi?ius, J.; Jur?enas, S.; Kuril?ik, G.; Miasojedovas, S.; Springis, M.; Tale, I.; Cheng, Y.-C.; Wang, H.-C.; Huang, C.-F.; Yang, C.C.; ?ukauskas, A.; CHIH-CHUNG YANG et al. |
| 臺大學術典藏 |
2018-09-10T05:18:29Z |
Stimulated emission in InGaN/GaN multiple quantum wells with different indium content
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Miasojedovas, S.; Jur?enas, S.; Kuril?ik, G.; ?ukauskas, A.; Springis, M.; Tale, I.; Yang, C.C.; CHIH-CHUNG YANG |
| 國立臺灣大學 |
2005 |
Ab initio Calculations of Charged Point Defects in GaN
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Gulans, A.; Evarestov, R. A.; Tale, I.; Yang, C.C. |
| 國立臺灣大學 |
2005 |
Carrier Localization Effect in Polarized InGaN Multiple Quantum Wells
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Zukauskas, A.; Kazlauskas, K.; Tamulaitis, G.; Mickevicius, J.; Jursenas, S.; Kurilcik, G.; Miasojedovas, S.; Springis, M.; Tale, I.; Cheng, Yung-Chen; Wang, Hsiang-Chen; Huang, Chi-Feng; Yang, C. C. |
| 國立臺灣大學 |
2005 |
Stimulated Emission in InGaN/GaN Multiple Quantum Wells with Different Indium Content
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Miasojedovas, S.; Jursenasa, S.; Kurilcik, G.; Zukauskas, A.; Springis, M.; Tale, I.; Yang, C.C. |
| 臺大學術典藏 |
2005 |
Ab initio calculations of charged point defects in GaN
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Gulans, A.; Evarestov, R.A.; Tale, I.; Yang, C.C.; CHIH-CHUNG YANG |
| 臺大學術典藏 |
2005 |
LCAO calculation of neutral defects in GaN
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Gulans, A.; Evarestov, R.A.; Tale, I.; Yang, C.C.; CHIH-CHUNG YANG |
Showing items 1-7 of 7 (1 Page(s) Totally)
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