|
|
Taiwan Academic Institutional Repository >
Browse by Author
|
"tan yung fang"
Showing items 1-8 of 8 (1 Page(s) Totally)
1
View [10|25|50] records per page
| 國立交通大學 |
2020-10-05T02:01:07Z |
Impact of electrode thermal conductivity on high resistance state level in HfO2-based RRAM
|
Lin, Shih-Kai; Wu, Cheng-Hsien; Chen, Min-Chen; Chang, Ting-Chang; Lien, Chen-Hsin; Xu, You-Lin; Tseng, Yi-Ting; Wu, Pei-Yu; Tan, Yung-Fang; Sun, Li-Chuan; Zhang, Yong-Ci; Huang, Jen-Wei; Sze, Simon M. |
| 國立交通大學 |
2020-07-01T05:21:19Z |
Incorporation of Resistive Random Access Memory into Low-Temperature Polysilicon Transistor with Fin-Like Structure as 1T1R Device
|
Huang, Wei-Chen; Zheng, Hao-Xuan; Chen, Po-Hsun; Chang, Ting-Chang; Tan, Yung-Fang; Lin, Shih-Kai; Zhang, Yong-Ci; Jin, Fu-Yuan; Wu, Chung-Wei; Yeh, Yu-Hsuan; Chou, Sheng-Yao; Huang, Hui-Chun; Chen, Yan-Wen; Sze, Simon M. |
| 國立交通大學 |
2020-03-02T03:23:32Z |
Abnormal High Resistive State Current Mechanism Transformation in Ti/HfO2/TiN Resistive Random Access Memory
|
Zhou, Kuan-Ju; Chang, Ting-Chang; Lin, Chih-Yang; Chen, Chun-Kuei; Tseng, Yi-Ting; Zheng, Hao-Xuan; Chen, Hong-Chih; Sun, Li-Chuan; Lien, Chih-Ying; Tan, Yung-Fang; Wu, Chung-Wei; Yeh, Yu-Hsuan; Sze, Simon M. |
| 國立交通大學 |
2020-03-01 |
Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation Annealing
|
Sze, Simon M.; Tsai, Tsung-Ming; Huang, Hui-Chun; Ma, Xiao-Hua; Hao, Yue; Tan, Yung-Fang; Chen, Wen-Chung; Tai, Mao-Chou; Yang, Chih-Cheng; Chen, Wei-Jang; Chang, Ting-Chang; Wu, Pei-Yu; Zheng, Hao-Xuan; Shih, Chih-Cheng |
| 國立交通大學 |
2020-02-02T23:54:28Z |
A characteristic improved technique and analysis with plasma treatment to the electrode on oxide-based resistive random access memory
|
Lin, Chih-Yang; Chang, Ting-Chang; Pan, Chih-Hung; Chen, Min-Chen; Xu, You-Lin; Tan, Yung-Fang; Wu, Pei-Yu; Chen, Chun-Kuei; Huang, Wei-Chen; Lin, Yun-Hsuan; Chao, Yu-Ting; Shou, Cheng-Yun; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M. |
| 國立交通大學 |
2019-12-13T01:12:22Z |
Overcoming Limited Resistance in 1T1R RRAM Caused by Pinch-Off Voltage During Reset Process
|
Zheng, Hao-Xuan; Chen, Min-Chen; Chang, Ting-Chang; Su, Yu-Ting; Chen, Wen-Chung; Huang, Wei-Chen; Wu, Pei-Yu; Tan, Yung-Fang; Xu, You-Lin; Zhang, Yong-Ci; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M. |
| 國立交通大學 |
2019-12-13T01:12:20Z |
Investigation of the forming process under UV illumination in HfO2-based resistance random access memory with a transparent electrode
|
Huang, Wei-Chen; Huang, Shin-Ping; Chen, Po-Hsun; Chen, Min-Chen; Chang, Ting-Chang; Shih, Chih-Cheng; Tseng, Yi-Ting; Zheng, Hao-Xuan; Tan, Yung-Fang; Wu, Chung-Wei; Yeh, Yuh-Suan; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T06:00:29Z |
The influence of temperature on set voltage for different high resistance state in 1T1R devices
|
Tan, Yung-Fang; Su, Yu-Ting; Chen, Min-Chen; Chang, Ting-Chang; Tsai, Tsung-Ming; Tseng, Yi-Ting; Yang, Chih-Cheng; Zheng, Hao-Xuan; Chen, Wen-Chung; Lin, Chun-Chu; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M. |
Showing items 1-8 of 8 (1 Page(s) Totally)
1
View [10|25|50] records per page
|
