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Showing items 1-6 of 6 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:25:49Z |
Comparison of oxide breakdown progression in ultra-thin oxide SOI and bulk pMOSFETs
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Chan, CT; Kuo, CH; Tang, CJ; Chen, MC; Wang, TH; Lu, SH; Hu, HC; Chen, TF; Yang, CK; Lee, MT; Wu, DY; Chen, JK; Chien, SC; Sun, SW |
| 國立交通大學 |
2014-12-08T15:25:27Z |
Investigation of post-NBTI stress recovery in pMOSFETs by direct measurement of single oxide charge de-trapping
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Chan, CT; Ma, HC; Tang, CJ; Wang, TH |
| 國立交通大學 |
2014-12-08T15:25:22Z |
Single-electron emission of traps in HfSiON as high-k gate dielectric for MOSFETs
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Chan, CT; Tang, CJ; Kuo, CH; Ma, HC; Tsai, CW; Wang, HCH; Chi, MH; Wang, T |
| 國立交通大學 |
2014-12-08T15:25:11Z |
Positive bias and temperature stress induced two-stage drain current degradation in HfSiON nMOSFET's
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Chan, CT; Tang, CJ; Wang, T; Wang, HCH; Tang, DD |
| 國立交通大學 |
2014-12-08T15:16:38Z |
A novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs - From single electron emission to PBTI recovery transient
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Wang, TH; Chan, CT; Tang, CJ; Tsai, CW; Wang, HCH; Chi, MH; Tang, DD |
| 國立成功大學 |
2011-11 |
Study of Solitary-Wave-Induced Fluid Motions and Vortices in a Cavity Using a Two-Dimensional Viscous Flow Model
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Chang, CH; Chu, T; Wang, KH; Tang, CJ |
Showing items 1-6 of 6 (1 Page(s) Totally)
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