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Institution Date Title Author
國立交通大學 2014-12-08T15:25:49Z Comparison of oxide breakdown progression in ultra-thin oxide SOI and bulk pMOSFETs Chan, CT; Kuo, CH; Tang, CJ; Chen, MC; Wang, TH; Lu, SH; Hu, HC; Chen, TF; Yang, CK; Lee, MT; Wu, DY; Chen, JK; Chien, SC; Sun, SW
國立交通大學 2014-12-08T15:25:27Z Investigation of post-NBTI stress recovery in pMOSFETs by direct measurement of single oxide charge de-trapping Chan, CT; Ma, HC; Tang, CJ; Wang, TH
國立交通大學 2014-12-08T15:25:22Z Single-electron emission of traps in HfSiON as high-k gate dielectric for MOSFETs Chan, CT; Tang, CJ; Kuo, CH; Ma, HC; Tsai, CW; Wang, HCH; Chi, MH; Wang, T
國立交通大學 2014-12-08T15:25:11Z Positive bias and temperature stress induced two-stage drain current degradation in HfSiON nMOSFET's Chan, CT; Tang, CJ; Wang, T; Wang, HCH; Tang, DD
國立交通大學 2014-12-08T15:16:38Z A novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs - From single electron emission to PBTI recovery transient Wang, TH; Chan, CT; Tang, CJ; Tsai, CW; Wang, HCH; Chi, MH; Tang, DD
國立成功大學 2011-11 Study of Solitary-Wave-Induced Fluid Motions and Vortices in a Cavity Using a Two-Dimensional Viscous Flow Model Chang, CH; Chu, T; Wang, KH; Tang, CJ

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