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Showing items 1-6 of 6 (1 Page(s) Totally)
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| 國立臺灣科技大學 |
2020 |
Reactively sputtered sb-gan films and its hetero-junction diode: The exploration of the n-to-p transition
|
Thao, C.P.;Tuan, Tuan T.T.A.;Kuo, D.-H.;Ke, W.-C.;Na, T.T.V.S. |
| 國立臺灣科技大學 |
2019 |
The effect of RF sputtering conditions on the physical characteristics of deposited GeGaN thin film
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Thao, C.P.;Kuo, D.-H.;Anh, Tuan T.T.;Tuan, K.A.;Vu, N.H.;Via, Sa Na T.T.;Van, Nhut K.;Van, Sau N. |
| 國立臺灣科技大學 |
2018 |
Electrical and structural characteristics of Ge-doped GaN thin films and its hetero-junction diode made all by RF reactive sputtering
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Thao, C.P.;Kuo, D.-H. |
| 國立臺灣科技大學 |
2018 |
Codoping effects of the Zn acceptor on the structural characteristics and electrical properties of the Ge donor-doped GaN thin films and its hetero-junction diodes all made by reactive sputtering
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Thao C.P.; Kuo D.-H.; Jan D.-J. |
| 國立臺灣科技大學 |
2018 |
Electrical and structural characteristics of Ge-doped GaN thin films and its hetero-junction diode made all by RF reactive sputtering
|
Thao, C.P.;Kuo, D.-H. |
| 國立臺灣科技大學 |
2017 |
Electrical and structural characteristics of tin-doped GaN thin films and its hetero-junction diode made all by RF reactive sputtering
|
Ting, C.-W;Thao, C.P;–H, Kuo D. |
Showing items 1-6 of 6 (1 Page(s) Totally)
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