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机构 日期 题名 作者
國立臺灣科技大學 2020 Reactively sputtered sb-gan films and its hetero-junction diode: The exploration of the n-to-p transition Thao, C.P.;Tuan, Tuan T.T.A.;Kuo, D.-H.;Ke, W.-C.;Na, T.T.V.S.
國立臺灣科技大學 2019 The effect of RF sputtering conditions on the physical characteristics of deposited GeGaN thin film Thao, C.P.;Kuo, D.-H.;Anh, Tuan T.T.;Tuan, K.A.;Vu, N.H.;Via, Sa Na T.T.;Van, Nhut K.;Van, Sau N.
國立臺灣科技大學 2018 Electrical and structural characteristics of Ge-doped GaN thin films and its hetero-junction diode made all by RF reactive sputtering Thao, C.P.;Kuo, D.-H.
國立臺灣科技大學 2018 Codoping effects of the Zn acceptor on the structural characteristics and electrical properties of the Ge donor-doped GaN thin films and its hetero-junction diodes all made by reactive sputtering Thao C.P.; Kuo D.-H.; Jan D.-J.
國立臺灣科技大學 2018 Electrical and structural characteristics of Ge-doped GaN thin films and its hetero-junction diode made all by RF reactive sputtering Thao, C.P.;Kuo, D.-H.
國立臺灣科技大學 2017 Electrical and structural characteristics of tin-doped GaN thin films and its hetero-junction diode made all by RF reactive sputtering Ting, C.-W;Thao, C.P;–H, Kuo D.

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